EP0469630A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor body and process for preparing said semiconductor body
Assignee: Canon Inc
•
Filing: 1991-08-02
•
Granted: —
•
Expires: 2011-08-02
Abstract
Abstract A process for preparing a semiconductor member comprises the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
Inventors
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:11
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 139
Claim 1
Independent Claim
61 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous monocrystalline semiconductor region by etching.
Claim 2
Dependent Claim
61 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous monocrystalline semiconductor region by etching.
Claim 3
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 1, wherein said monocrystalline semiconductor comprises silicon.
Claim 4
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 1, wherein said porous monocrystalline semiconductor region is P-type.
Claim 5
Dependent Claim
25 words
A process for preparing a semiconductor member according to Claim 1, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 6
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 1, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 7
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 1, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 8
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 1, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 9
Dependent Claim
52 words
A process for preparing a semiconductor member according to Claim 1, wherein said nonporous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 10
Dependent Claim
29 words
A process for preparing a semiconductor member according to Claim 1, wherein said porous monocrystalline semiconductor region is obtained by making the nonporous semiconductor monocrystalline region porous by anodization.
Claim 11
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 9, wherein said anodization is carried out in an HF solution.
Claim 12
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 2, wherein said non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 13
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 11, wherein said N-type silicon is formed by proton irradiation or epitaxial growth.
Claim 14
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 1, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 15
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 1, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 16
Dependent Claim
38 words
A process for preparing a semiconductor member according to Claim 1, wherein etching of said porous monocrystalline semiconductor region is carried out under the state where the members bonded to each other are covered with an anti-etching material.
Claim 17
Dependent Claim
18 words
A process for preparing a semiconductor member according to Claim 15, wherein said anti-etching material is silicon nitride.
Claim 18
Dependent Claim
18 words
A process for preparing a semiconductor member according to Claim 15, wherein said anti-etching material is Apiezon Wax.
Claim 19
Dependent Claim
80 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 20
Dependent Claim
80 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 21
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 18, wherein said monocrystalline semiconductor comprises silicon.
Claim 22
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 18, wherein said porous monocrystalline semiconductor region is P-type.
Claim 23
Dependent Claim
25 words
A process for preparing a semiconductor member according to Claim 18, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 24
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 18, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 25
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 18, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 26
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 18, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 27
Dependent Claim
52 words
A process for preparing a semiconductor member according to Claim 18, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 28
Dependent Claim
29 words
A process for preparing a semiconductor member according to Claim 18, wherein said porous monocrystalline semiconductor region is obtained by making the non-porous semiconductor monocrystalline region porous by anodization.
Claim 29
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 18, wherein said anodization is carried out in an HF solution.
Claim 30
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 19, wherein said non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 31
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 28, wherein said N-type silicon is formed by proton irradiation or epitaxial growth.
Claim 32
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 18, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 33
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 18, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 34
Dependent Claim
38 words
A process for preparing a semiconductor member according to Claim 18, wherein etching of said porous monocrystalline semiconductor region is carried out under the state where the members bonded to each other are covered with an anti-etching material.
Claim 35
Dependent Claim
18 words
A process for preparing a semiconductor member according to Claim 32, wherein said anti-etching material is silicon nitride.
Claim 36
Dependent Claim
18 words
A process for preparing a semiconductor member according to Claim 32, wherein said anti-etching material is Apiezon Wax.
Claim 37
Dependent Claim
71 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous monocrystalline semiconductor region, forming a non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous monocrystalline semiconductor region by etching.
Claim 38
Dependent Claim
71 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous monocrystalline semiconductor region, forming a non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous monocrystalline semiconductor region by etching.
Claim 39
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 35, wherein said monocrystalline semiconductor comprises silicon.
Claim 40
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 35, wherein said porous monocrystalline semiconductor region is P-type.
Claim 41
Dependent Claim
25 words
A process for preparing a semiconductor member according to Claim 35, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 42
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 35, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 43
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 35, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 44
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 35, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 45
Dependent Claim
52 words
A process for preparing a semiconductor member according to Claim 36, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 46
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 35, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 47
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 43, wherein said anodization is carried out in an HF solution.
Claim 48
Dependent Claim
22 words
A porous for preparing a semiconductor member according to Claim 36, wherein said non- porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 49
Dependent Claim
20 words
A process for preparing a semiconductor member according to Claim 45, wherein said N-type silicon is formed by epitaxial growth
Claim 50
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 35, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 51
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 35, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 52
Dependent Claim
87 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous monocrystalline semiconductor region, forming a non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, forming region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 53
Dependent Claim
87 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous monocrystalline semiconductor region, forming a non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, forming region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 54
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 49, wherein said monocrystalline semiconductor comprises silicon.
Claim 55
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 49, wherein said porous monocrystalline semiconductor region is P-type.
Claim 56
Dependent Claim
25 words
A process for preparing a semiconductor member according to Claim 49, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 57
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 49, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 58
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 49, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 59
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 49, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 60
Dependent Claim
52 words
A process for preparing a semiconductor member according to Claim 49, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 61
Dependent Claim
21 words
A process for preparing a semiconductor member according to claim 49, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 62
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 57, wherein said anodization is carried out in an HF solution.
Claim 63
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 50, wherein said non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 64
Dependent Claim
20 words
A process for preparing a semiconductor member according to Claim 59, wherein said N-type silicon is formed by epitaxial growth.
Claim 65
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 49, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 66
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 49, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 67
Dependent Claim
93 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous monocrystalline semiconductor region and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing laid porous monocrystalline semiconductor region by etching.
Claim 68
Dependent Claim
93 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous monocrystalline semiconductor region and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, bonding the surface of a member of which the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing laid porous monocrystalline semiconductor region by etching.
Claim 69
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 63, wherein said monocrystalline semiconductor comprise silicon.
Claim 70
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 63, wherein said porous monocrystalline semiconductor region is P-type.
Claim 71
Dependent Claim
26 words
A process for preparing a semiconductor member according to Claim 63, wherein said third non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 72
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 63, wherein said bonding step in carried out in an atmosphere containing nitrogen.
Claim 73
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 63, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 74
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 63, wherein said third non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 75
Dependent Claim
53 words
A process for preparing a semiconductor member according to Claim 63, wherein said third non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 76
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 63, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 77
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 71, wherein said anodization is carried out in an HF solution.
Claim 78
Dependent Claim
22 words
A process for preparing a semiconductor member accoding to Claim 64, wherein said third non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 79
Dependent Claim
20 words
A process for preparing a semiconductor member according to Claim 73, wherein said N-type silicon is formed by epitaxial growth.
Claim 80
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 63, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 81
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 63, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 82
Dependent Claim
109 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous monocrystalline semiconductor region and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface or a member of which the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said second non-porous monocrystalline semiconductor by mechanical polishing, and removing said porous monocrystalline semiconductor region by etching.
Claim 83
Dependent Claim
109 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous monocrystalline semiconductor region and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface or a member of which the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said second non-porous monocrystalline semiconductor by mechanical polishing, and removing said porous monocrystalline semiconductor region by etching.
Claim 84
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 77, wherein said monocrystalline semiconductor comprises silicon.
Claim 85
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 77, wherein said porous monocrystalline semiconductor region is P-type.
Claim 86
Dependent Claim
27 words
A process for preparing a semiconductor member according to Claim 77, wherein said third non porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 87
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 77, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 88
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 77, wherein said bonding step included a heat treatment in an atmosphere containing nitrogen.
Claim 89
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 77, wherein laid third non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 90
Dependent Claim
53 words
A process for preparing a semiconductor member according to Claim 77, wherein said third non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 91
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 77, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 92
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 85, wherein said anodization is carried out in an HF solution.
Claim 93
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 70, wherein said third non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 94
Dependent Claim
20 words
A process for preparing a semiconductor member according to Claim 87, wherein said N-type silicon is formed by epitaxial growth.
Claim 95
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 77, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 96
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 77, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 97
Dependent Claim
83 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous single crysalline semiconductor region, bonding the surface of a member of which the surface is formed of an insulating substance onto the surface of said second single crystlline semiconductor region, and removing said porous monocrystalline semiconductor region by etching.
Claim 98
Dependent Claim
83 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous single crysalline semiconductor region, bonding the surface of a member of which the surface is formed of an insulating substance onto the surface of said second single crystlline semiconductor region, and removing said porous monocrystalline semiconductor region by etching.
Claim 99
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 91, wherein said monocrystalline semiconductor comprises silicon.
Claim 100
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 91, wherein said first monocrystalline semiconductor region is P-type.
Claim 101
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 91, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 102
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 91, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 103
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 91, wherein said second non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 104
Dependent Claim
53 words
A process for preparing a semiconductor member according to Claim 91, wherein said second non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method
Claim 105
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 91, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 106
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 98, wherein said anodization is carried out in an HF solution.
Claim 107
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 92, wherein said second non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 108
Dependent Claim
20 words
A process for preparing a semiconductor member according to Claim 100, wherein said N-type silicon is formed by epitaxial growth.
Claim 109
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 91, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material
Claim 110
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 91, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 111
Dependent Claim
98 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of a member of which the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 112
Dependent Claim
98 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous monocrystalline semiconductor region, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of a member of which the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and removing said porous monocrystalline semiconductor region by etching.
Claim 113
Dependent Claim
17 words
A process for preparing a semiconductor member according to Claim 104, wherein said monocrystalline semiconductor comprises silicon.
Claim 114
Dependent Claim
19 words
A process for preparing a semiconductor member according to Claim 104, wherein said first non-monocrystalline semiconductor legion is P-type.
Claim 115
Dependent Claim
25 words
A process for preparing a semiconductor member according to Claim 104, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 116
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 104, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 117
Dependent Claim
24 words
A process for preparing a semiconductor member according to Claim 104, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 118
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 104, wherein said second non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 119
Dependent Claim
53 words
A process for preparing a semiconductor member according to Claim 104, wherein said second non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 120
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 104, wherein said porous monocrystalline semiconductor region is obtained by anodization.
Claim 121
Dependent Claim
21 words
A process for preparing a semiconductor member according to Claim 112, wherein said anodization is carried out in an HF solution.
Claim 122
Dependent Claim
22 words
A process for preparing a semiconductor member according to Claim 105, wherein said second non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 123
Dependent Claim
23 words
A process for preparing a semiconductor member according to Claim 114, wherein said N-type silicon is formed by proton irradiation or epitaxial growth.
Claim 124
Dependent Claim
28 words
A process for preparing a semiconductor member according to Claim 104, wherein the member of which the surface is constituted or an insulating substance comprises a light-transmissive material.
Claim 125
Dependent Claim
33 words
A process for preparing a semiconductor member according to Claim 104, wherein the member of which the surface is constituted of an insulating substance is a silicon substrate with its surface being oxidized.
Claim 126
Dependent Claim
41 words
A semiconductor member comprising: a first member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, and a second member having the surface constituted of an insulating substance bonded onto the surface of said non-porous monocrystalline semiconductor region.
Claim 127
Dependent Claim
41 words
A semiconductor member comprising: a first member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, and a second member having the surface constituted of an insulating substance bonded onto the surface of said non-porous monocrystalline semiconductor region.
Claim 128
Dependent Claim
13 words
A semiconductor member according to Claim 118, wherein said monocrystalline semiconductor comprises silicon.
Claim 129
Dependent Claim
15 words
A semiconductor member according to Claim 118, wherein said porous monocrystalline semiconductor region is P-type.
Claim 130
Dependent Claim
21 words
A semiconductor member according to Claim 118, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 131
Dependent Claim
55 words
A semiconductor member comprising: a first member having a non-porous monocrystalline semiconductor region and a region constituted of an insulating substance arranged in this order on a porous monocrystalline semiconductor region, and a second member bonded through a region constituted of an insulating substance onto the surface of said region constituted of the insulating substance.
Claim 132
Dependent Claim
55 words
A semiconductor member comprising: a first member having a non-porous monocrystalline semiconductor region and a region constituted of an insulating substance arranged in this order on a porous monocrystalline semiconductor region, and a second member bonded through a region constituted of an insulating substance onto the surface of said region constituted of the insulating substance.
Claim 133
Dependent Claim
13 words
A semiconductor member according to Claim 122, wherein said monocrystalline semiconductor comprises silicon.
Claim 134
Dependent Claim
15 words
A semiconductor member according to Claim 122, wherein said porous monocrystalline semiconductor region is P-type.
Claim 135
Dependent Claim
21 words
A semiconductor member according to Claim 122, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 136
Dependent Claim
56 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance, characterized in that the dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10 4 /cm 2 or less, and the life time of carriers is 5.0 x 10- 4 sec or longer.
Claim 137
Dependent Claim
56 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance, characterized in that the dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10 4 /cm 2 or less, and the life time of carriers is 5.0 x 10- 4 sec or longer.
Claim 138
Dependent Claim
86 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance, characterized in that the dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10 4 /cm 2 or less, and the life time of carriers is 5.0 x 10- 4 sec or longer, and also the difference between the maximum value and the minimum value of the thickness of said silicon monocrystalline semiconductor region is 10% or less based on said maximum value.
Claim 139
Dependent Claim
86 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance, characterized in that the dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10 4 /cm 2 or less, and the life time of carriers is 5.0 x 10- 4 sec or longer, and also the difference between the maximum value and the minimum value of the thickness of said silicon monocrystalline semiconductor region is 10% or less based on said maximum value.
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