Abstract A quantum box structure and a carrier conductivity modulating quantum device are disclosed. The quantum box structure comprises a quantum boxes array including a plurality of quantum boxes arranged adjacent to each other on a common plane. Each quantum box is asymmetric in a direction orthogonal to the plane in one of composition of materials constituting the quantum box and geometry of the quantum box. The carrier conductivity modulating quantum device comprises a plurality of regions including quantum boxes arrays including a plurality of quantum boxes arranged on a common plane. Each regions exhibits at least one of a metal phase and an insulator phase. Each quantum box is asymmetric in a direction orthogonal to the plane at least in one of composition of materials constituting the quantum box and geometry of the quantum box.
A quantum box structure comprising a plurality of quantum boxes having a side substantially on a common plane, each said quantum box being asymmetric in a direction orthogonal to said plane in a composition of materials constituting said quantum box.
Claim 2
Dependent Claim
40 words
A quantum box structure comprising a plurality of quantum boxes having a side substantially on a common plane, each said quantum box being asymmetric in a direction orthogonal to said plane in a composition of materials constituting said quantum box.
Claim 3
Dependent Claim
26 words
The quantum box structure according to claim 1 wherein barrier heights for quantum confinement of said quantum boxes vary in said direction orthogonal to said plane.
Claim 4
Dependent Claim
34 words
The quantum box structure according to claim 1 wherein respective said quantum boxes are surrounded by a barrier layer, said quantum boxes and said barrier layer being made by a heterojunction of compound semiconductors.
Claim 5
Dependent Claim
35 words
The quantum box structure according to claim 3 wherein barrier heights for quantum confinement of said quantum boxes vary in said direction orthogonal to said plane with changes in mixture ratio of said compound semiconductors.
Claim 6
Dependent Claim
21 words
The quantum box structure according to claim 4 wherein said barrier heights vary monotonously in said direction orthogonal to said plane.
Claim 7
Dependent Claim
30 words
The quantum box structure according to claim 1 wherein electric conductivity in said quantum boxes is modulated by applying an external electric field in said direction orthogonal to said plane.
Claim 8
Dependent Claim
24 words
The quantum box structure according to claim 6 wherein an electrode for applying said external electric field is provided adjacent to said quantum boxes.
Claim 9
Dependent Claim
16 words
The quantum box structure according to claim 6 wherein said quantum boxes exhibit an insulator phase.
Claim 10
Dependent Claim
16 words
The quantum box structure according to claim 6 wherein said quantum boxes exhibit a metal phase.