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US4942437A
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Electron tuned quantum well device
Assignee: International Business Machines Corp
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Filing: 1989-01-13
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Granted: 1990-07-17
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Expires: 2009-01-13
Abstract
Abstract A quantum well type signal translating device is constructed by providing an appendage in which a reflected wave can be employed to introduce constructive or destructive interference in electron wave conduction at the heterojunction.
Inventors
- 👤 Alan B. Fowler
- 👤 Gregory L. Timp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:35
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D48/00; H10D48/383; H10D30/00; H10D30/40; H10D30/43; H10N; H10N70/00; H10N70/10
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
181 words
In a signal translator which includes a single conducting path of given length on the surface of a semiconductor member of layers of Ga 1-x Al x As on GaAs said member having a heterojunction therein and a potential well containing electrons adjacent said heterojunction, said GaAs being undoped and separated from a substrate by a buffer layer of GaAs doped with Si to 10 17 atom/cm 3 and said Ga 1-x Al x As being undoped adjacent said heterojunction and having a region at the surface of Ga 0 .35 Al 0 .65 As doped with Si to 10 17 atoms/cm 3 , the improvement comprising a tunable stub having a length dimension (L) of 2000 Å connected to and extending from said path at a location along said given length and gate means having a width dimension (W) of 1000 Å for providing a localized electric field across said heterojunction under a portion of said tunable stub the latter having a length less than the means free path length for the scattering of electrons in said second semiconductor material.
Claim 2
Dependent Claim
181 words
In a signal translator which includes a single conducting path of given length on the surface of a semiconductor member of layers of Ga 1-x Al x As on GaAs said member having a heterojunction therein and a potential well containing electrons adjacent said heterojunction, said GaAs being undoped and separated from a substrate by a buffer layer of GaAs doped with Si to 10 17 atom/cm 3 and said Ga 1-x Al x As being undoped adjacent said heterojunction and having a region at the surface of Ga 0 .35 Al 0 .65 As doped with Si to 10 17 atoms/cm 3 , the improvement comprising a tunable stub having a length dimension (L) of 2000 Å connected to and extending from said path at a location along said given length and gate means having a width dimension (W) of 1000 Å for providing a localized electric field across said heterojunction under a portion of said tunable stub the latter having a length less than the means free path length for the scattering of electrons in said second semiconductor material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-16 | 1994-01-15 | 1994-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-16 | 1998-01-15 | 1998-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-16 | 2002-01-15 | 2002-07-17 | $7700.00 | Window Closed / Lapsed |