Low-noise bipolar transistor

Claim 2

A low-noise pnp bipolar transistor comprising an emitter region, a base region, a collector region integrated in a semiconductor material layer defining a surface portion and a deeper bulk portion that is deeper than the emitter region; wherein, the transistor further comprises a cutoff region having the same doping type as the emitter region laterally surrounding the emitter region in the surface portion for operating the transistor predominantly in the bulk portion; wherein the base region comprises an N-type annular region laterally surrounding the emitter region and arranged in the surface portion; the semiconductor material layer being N-type, and presenting a first doping level; the N-type annular region presenting a second doping level higher than the first doping level; and wherein a base contact is disposed on the N-type annular region.

Claim 3

A transistor as claimed in claim 1 wherein the collector region comprises a deep annular layer formed in the semiconductor material layer and laterally surrounding the N-type annular region.

Claim 4

A transistor as claimed in claim 1 wherein the annular region is a thin region, with a depth between 0.3 and 0.6 μm.

Claim 5

A transistor as claimed in claim 1 wherein the emitter region has a third doping level, the cutoff region being part of a P-type tub region arranged in the surface portion between the emitter region and the N-type annular region, the tub region laterally and downwardly surrounding the emitter region and presenting a fourth doping level lower than the third doping level; and an annular P-type well region having a fifth doping level lower than the third doping level, the annular P-type well region contiguous with the collector region at an inside lateral edge of the collector region.

Claim 6

A transistor as claimed in claim 4 wherein the N-type annular region comprises a shallow portion and a deep portion having a second lateral edge facing the collector region, the annular P-type well region laterally and downwardly surrounding the N-type annular region at least at the second lateral edge of the deep portion wherein the deep portion extends along a lateral edge of the P-type annular well region and the annular P-type well region is deeper than the N-type annular region and is below the N-type annular region, a first lateral edge of the deep portion facing the emitter region.

Claim 7

The low-noise pnp bipolar transistor of claim 1 wherein the cutoff region has a doping level lower than the second doping level.

Claim 8

A low-noise pnp bipolar transistor comprising an emitter region, a base region, a collector region integrated in a semiconductor material layer defining a surface portion and a deeper bulk portion; wherein, the transistor further comprises a cutoff region laterally surrounding the emitter region in the surface portion, for operating the transistor predominantly in the bulk portion; wherein the base region comprises an N-type annular region laterally surrounding the emitter region and arranged in the surface portion; the semiconductor material layer being N type, and having a first doping level; and the N-type annular region having a second doping level higher than the first doping level and wherein the collector region comprises a first annular layer of P-type material having a third doping level formed in the semiconductor material layer and laterally surrounding the N-type annular region, and a second annular layer of P-type material having a fourth doping level greater than the third doping level, the second annular layer of P-type material being substantially deeper than said base and emitter regions.

Claim 9

A low-noise pnp bipolar transistor comprising an emitter region, a base region, a collector region integrated in a semiconductor material layer defining a surface portion and a deeper bulk portion; wherein, the transistor further comprises a cutoff region laterally surrounding the emitter region in the surface portion, for operating the transistor predominantly in the bulk portion; wherein the base region comprises an N-type annular region laterally surrounding the emitter region and arranged in the surface portion; the semiconductor material layer being N type, and having a first doping level; and the N-type annular region having a second doping level higher than the first doping level and wherein the collector region comprises a first annular layer of P-type material having a third doping level formed in the semiconductor material layer and laterally surrounding the N-type annular region, and a second annular layer of P-type material having a fourth doping level greater than the third doping level, the second annular layer of P-type material being substantially deeper than said base and emitter regions.

Claim 10

A low-noise pnp bipolar transistor comprising an emitter region, a base region, a collector region integrated in a semiconductor material layer defining a surface portion and a deeper bulk portion; wherein the base region comprises an N-type annular region laterally surrounding the emitter region and arranged in the surface portion; the semiconductor material layer being N type, and having a first doping level; the N-type annular region having a second doping level higher than the first doping level; wherein the emitter region has a third doping level; and a P-type annular layer arranged in the surface portion between and adjacent to the emitter region and the N-type annular region, the P-type annular layer having a fourth doping level lower than the third doping level, the P-type annular layer being shaped to produce a cutoff region laterally surrounding the emitter region in the surface portion, the cutoff region causing the transistor to operate predominantly in the bulk portion.

Claim 11

A low-noise pnp bipolar transistor comprising an emitter region, a base region, a collector region integrated in a semiconductor material layer defining a surface portion and a deeper bulk portion; wherein the base region comprises an N-type annular region laterally surrounding the emitter region and arranged in the surface portion; the semiconductor material layer being N type, and having a first doping level; the N-type annular region having a second doping level higher than the first doping level; wherein the emitter region has a third doping level; and a P-type annular layer arranged in the surface portion between and adjacent to the emitter region and the N-type annular region, the P-type annular layer having a fourth doping level lower than the third doping level, the P-type annular layer being shaped to produce a cutoff region laterally surrounding the emitter region in the surface portion, the cutoff region causing the transistor to operate predominantly in the bulk portion.

Claim 12

A transistor as claimed in claim 8, further comprising a P-type well region arranged in the surface portion between and adjacent to the N-type annular region and the collector region.

Claim 13

A transistor as claimed in claim 9 wherein the P-type well region presents substantially the same doping level and substantially the same depth as the P-type annular layer.

Claim 14

A lateral bipolar transistor, comprising: an emitter region of a first conductivity type and having an emitter region doping level; an emitter contact connected to said emitter region; a first annular well of the first conductivity type surrounding the emitter region and having a doping level less than the emitter region doping level; a base region of a second conductivity type, the base region surrounding the first annular well, the base region having a shallow surface portion and a deeper, bulk portion, the shallow surface portion having a higher doping level than the deeper, bulk portion; a second annular well surrounding the base region, the second annular well being of the first conductivity type; a collector region of the first conductivity type, the collector region surrounding said second annular well, the depth and position of the emitter, base and collector regions being selected to provide operation as a lateral bipolar transistor; an emitter contact connected to said emitter region; a base contact connected to said shallow surface portion of the base region having the higher doping level; and a collector contact connected to said collector region.

Claim 15

A lateral bipolar transistor, comprising: an emitter region of a first conductivity type and having an emitter region doping level; an emitter contact connected to said emitter region; a first annular well of the first conductivity type surrounding the emitter region and having a doping level less than the emitter region doping level; a base region of a second conductivity type, the base region surrounding the first annular well, the base region having a shallow surface portion and a deeper, bulk portion, the shallow surface portion having a higher doping level than the deeper, bulk portion; a second annular well surrounding the base region, the second annular well being of the first conductivity type; a collector region of the first conductivity type, the collector region surrounding said second annular well, the depth and position of the emitter, base and collector regions being selected to provide operation as a lateral bipolar transistor; an emitter contact connected to said emitter region; a base contact connected to said shallow surface portion of the base region having the higher doping level; and a collector contact connected to said collector region.

Claim 16

The bipolar transistor according to claim 11 wherein the doping level of said second annular well is lower than the doping level of the first annular well.

Claim 17

The bipolar transistor according to claim 11 wherein said collector region includes a deep, heavily doped portion that extends deeper than the second annular well.

Claim 18

The bipolar transistor according to claim 13 wherein said collector region includes a collector contact portion having a different doping level than the deep, heavily doped portion.

Claim 19

The bipolar transistor according to claim 14 wherein said collector contact portion is at a lower and more lightly doped level than said deep, heavily doped portion, the combination ensuring that charge carriers travel from the emitter region, through the deeper bulk portion of the base region and to the deep, heavily doped collector portion.