US4047217A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-gain, high-voltage transistor for linear integrated circuits
Assignee: Fairchild Semiconductor Corp
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Filing: 1976-04-12
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Granted: 1977-09-06
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Expires: 1996-04-12
Abstract
Abstract A semiconductor structure for, and method of manufacture of, a linear integrated circuit provides the equivalent of a base function in a transistor, wherein the base function has a dual charge density, with the latter being relatively low in the lower active area of the base between PN junctions for high gain and high breakdown voltage, but high along the upper surface to prevent an unwanted inversion layer from occurring.
Inventors
- 👤 Terence McCaffrey
- 👤 Hassan Raza
- 👤 Bruce C. Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/641; H10D84/642; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D62/17; H10D62/177
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
173 words
An improved bipolar transistor device having a high breakdown voltage and high gain comprising: a first collector region of semiconductor material of one conductivity type having a principal surface; a second base region of opposite conductivity type located within the first collector region and forming a first p-n junction herewith that has an edge at the principal surface, the second base region having a relatively low charge density; a third emitter region of one conductivity type located within the second base region and forming a second p-n junction therewith that has an edge at the principal surface; and a fourth base region of opposite conductivity type located along a portion of the principal surface abutting the entire periphery of said third region and extending into portions of the first, second, and third regions, the fourth region having a charge density about an order of magnitude greater than that of the second region, said fourth base region and said second base region providing the equivalent of a base function with a dual charge density.
Claim 2
Dependent Claim
173 words
An improved bipolar transistor device having a high breakdown voltage and high gain comprising: a first collector region of semiconductor material of one conductivity type having a principal surface; a second base region of opposite conductivity type located within the first collector region and forming a first p-n junction herewith that has an edge at the principal surface, the second base region having a relatively low charge density; a third emitter region of one conductivity type located within the second base region and forming a second p-n junction therewith that has an edge at the principal surface; and a fourth base region of opposite conductivity type located along a portion of the principal surface abutting the entire periphery of said third region and extending into portions of the first, second, and third regions, the fourth region having a charge density about an order of magnitude greater than that of the second region, said fourth base region and said second base region providing the equivalent of a base function with a dual charge density.
Claim 3
Dependent Claim
38 words
Device of claim 1 further defined by a layer of passivation material located over the principal surface with portions removed to expose portions of the first, second and third regions to enable electrical contact to be made thereto.
Claim 4
Dependent Claim
14 words
Device of claim 1 wherein the second region is deeper than the fourth region.
Claim 5
Dependent Claim
14 words
Device of claim 1 wherein the fourth region is deeper than the second region.
Claim 6
Dependent Claim
14 words
Device of claim 1 wherein the fourth region is deeper than the third region.
Claim 7
Dependent Claim
14 words
Device of claim 1 wherein the third region is deeper than the fourth region.
Claim 8
Dependent Claim
21 words
Device of claim 1 wherein the charge density of the second region is about 10 17 dopant atoms per cubic centimeter.
Claim 9
Dependent Claim
20 words
Device of claim 1 wherein the one conductivity type is N-type conductivity, and the opposite conductivity type is P-type conductivity.
Claim 10
Dependent Claim
42 words
Device of claim 1 further defined by the first region being in a pocket located in a layer of epitaxial semiconductor material, the epitaxial layer having a plurality of pockets, with each pocket electrically isolated from other pockets in the epitaxial layer.
Claim 11
Dependent Claim
24 words
Device of claim 9 further defined by the epitaxial layer resting upon and supported by a substrate of semiconductor material of opposite conductivity type.
Claim 12
Dependent Claim
154 words
In a bipolar transistor device comprising a collector including a first region of semiconductor material of one conductivity type having a principal surface; a base including a second region of opposite conductivity type located within the first region to form a first p-n junction therewith, the junction having an edge at the principal surface; an emitter including a third region of one conductivity type located within the second region to form a second p-n junction therewith, the junction having an edge at the principal surface; the improvement comprising the second region further defined by a relative low charge density and said base including a fourth region of opposite conductivity type having a charge density of an order of magnitude greater than the second region, the fourth region located along a portion of the principal surface abutting the entire periphery of said third region and extending into portions of the first, second, and third regions.
Claim 13
Dependent Claim
154 words
In a bipolar transistor device comprising a collector including a first region of semiconductor material of one conductivity type having a principal surface; a base including a second region of opposite conductivity type located within the first region to form a first p-n junction therewith, the junction having an edge at the principal surface; an emitter including a third region of one conductivity type located within the second region to form a second p-n junction therewith, the junction having an edge at the principal surface; the improvement comprising the second region further defined by a relative low charge density and said base including a fourth region of opposite conductivity type having a charge density of an order of magnitude greater than the second region, the fourth region located along a portion of the principal surface abutting the entire periphery of said third region and extending into portions of the first, second, and third regions.
Claim 14
Dependent Claim
21 words
Device of claim 11 wherein the charge density of the first region is about 10 17 dopant atoms per cubic centimeter.
Claim 15
Dependent Claim
20 words
Device of claim 11 wherein the one conductivity type is N-type conductivity and the opposite conductivity type is P-type conductivity.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |