Integrated circuits with oxidation-junction isolation and channel stop

Claim 1

IN A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR BODY HAVING AT A MAJOR SURFACE AN INSET PATTERN OF INSULATING MATERIAL FORMING AT LEAST ONE LAYERSHAPED, SURFACE BODY PART ADJOINING THE INSET PATTERN ALONG ITS ENTIRE CIRCUMFERENCE AND THROUGHOUT ITS ENTIRE THICKNESS, AND HAVING AT LEAST ONE CIRCUIT ELEMENT WITH AT LEAST FIRST AND SECOND REGIONS OF A FIRST CONDUCTIVITY TYPE SEPARATED BY A THIRD REGION OF A SECOND CONDUCTIVITY TYPE WITH SAID FIRST AND THIRD REGIONS BEING LOCATED ENTIRELY IN SAID ONE LAYER-SHAPED BODY PART AND SAID SECOND REGION HAVING AT LEAST A PART LOCATED IN SAID ONE LAYER-SHAPED BODY PART AND SAID SECOND REGION PART ADJOINING THE INSET PATTERN ALONG ITS ENTIRE CIRCUMFERENCE, AND HAVING SAID THIRD REGION ADJOINING THE INSET PATTERN ALONG AT LEAST A PART OF ITS CIRCUMFERENCE AND BEING SEPARATED FROM THE MAJOR SURFACE AT LEAST IN PART BY THE FIRST REGION, IN WHICH AN ADDITIONAL DOPED ZONE IS PROVIDED ADJACENT TO THE INSET PATTERN, THE STEPS COMPRISING PRIOR TO PROVISION OF THE INSET PATTERN, PROVIDIG AN OXIDATION AND IMPURITY MASKING LAYER PATTERN ON THE MAJOR SURFACE WITH APERTURES OVER THE SEMICONDUCTOR BODY PORTIONS AT THE AREAS WHERE THE INSET PATTERN IS TO BE FORMED, INTRODUCING SECOND TYPE FORMING IMPURITIES INTO THE BODY THROUGH THE APERTURES WHILE THE OXIDATION AND IMPURITY MASKING LAYER PROTECTS THE BODY PARTS BETWEEN THE APERTURES TO FORM THE SAID ADDITIONAL ZONE, AND THEREAFTER OXIDIZING THE BODY PORTIONS THROUGH THE APERTURES WHILE THE OXIDATION MASKING LAYER PROTECTS THE BDOY PARTS BETWEEN THE APERTURES TO FORM THE INSET PATTERN, THE IMPURITY INTRODUCTION AND OXIDATION STEPS BEING SUCH THAT THE ADDITIONAL DOPED ZONE WHICH FORMS BORDERS THE WHOLE OF THE INSET PATTERN AND CONTAINS A CONCENTRATION OF SECOND TYPE FORMING IMPURITIES WHICH IS SMALLER THAN THE MAXIMUM CONCENTRATION OF FIRST TYPE FORMING IMPURITIES IN THE SECOND REGION BUT STILL SUFFICIENTLY LARGE TO PREVENT IN THE SEMICONDUCTOR ADJACENT THE INSET PATTERN UNDESIRED ELECTRICAL CONNECTIONS BETWEEN SPACED FIRST TYPE REGIONS.