US5818071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon carbide metal diffusion barrier layer
Assignee: Dow Silicones Corp
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Filing: 1995-02-02
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Granted: 1998-10-06
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Expires: 2015-02-02
Abstract
Abstract Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.
Inventors
- 👤 Mark Jon Loboda
- 👤 Keith Winton Michael
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
69 words
An integrated circuit comprising: A) a circuit subassembly comprising a semiconductor substrate having solid state device regions and, deposed on the surface of the semiconductor substrate, metal wiring interconnecting the solid state device regions, the metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering at least the metal wiring; and C) a dielectric layer covering at least the silicon carbide layer.
Claim 2
Dependent Claim
69 words
An integrated circuit comprising: A) a circuit subassembly comprising a semiconductor substrate having solid state device regions and, deposed on the surface of the semiconductor substrate, metal wiring interconnecting the solid state device regions, the metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering at least the metal wiring; and C) a dielectric layer covering at least the silicon carbide layer.
Claim 3
Dependent Claim
26 words
The integrated circuit of claim 1 wherein the amorphous silicon carbide covers the metal wiring and the surface of the circuit subassembly containing the device regions.
Claim 4
Dependent Claim
32 words
The integrated circuit of claim 1 wherein the dielectric layer is selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, silicon carbides, silicon oxycarbides, silicon carbonitrides, and organic materials.
Claim 5
Dependent Claim
19 words
The integrated circuit of claim 1 wherein the dielectric layer has a dielectric constant of less than about 3.5.
Claim 6
Dependent Claim
14 words
The integrated circuit of claim 1 wherein the dielectric layer is a silicon oxide.
Claim 7
Dependent Claim
15 words
The integrated circuit of claim 1 wherein the metal wiring is thin film metal wiring.
Claim 8
Dependent Claim
23 words
The integrated circuit of claim 1 wherein the metal wiring is selected from the group consisting of copper, silver, gold, alloys, and superconductors.
Claim 9
Dependent Claim
12 words
The integrated circuit of claim 1 wherein the metal wiring is copper.
Claim 10
Dependent Claim
18 words
The integrated circuit of claim 1 further comprising a second amorphous silicon carbide layer covering the dielectric layer.
Claim 11
Dependent Claim
39 words
The integrated circuit of claim 9 further comprising a second layer of metal wiring formed on the second layer of silicon carbide, wherein the second layer of metal wiring is electrically connected to the first layer of metal wiring.
Claim 12
Dependent Claim
88 words
An integrated circuit comprising: A) a circuit subassembly comprising a semiconductor substrate having solid state device regions and, deposed on the surface of the semiconductor substrate, metal wiring interconnecting the solid state device regions, the metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering the metal wiring; and C) a second layer of metal wiring formed on the layer of amorphous silicon carbide, wherein the second layer of metal wiring is electrically connected to the first layer of metal wiring.
Claim 13
Dependent Claim
88 words
An integrated circuit comprising: A) a circuit subassembly comprising a semiconductor substrate having solid state device regions and, deposed on the surface of the semiconductor substrate, metal wiring interconnecting the solid state device regions, the metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering the metal wiring; and C) a second layer of metal wiring formed on the layer of amorphous silicon carbide, wherein the second layer of metal wiring is electrically connected to the first layer of metal wiring.
Claim 14
Dependent Claim
15 words
The integrated circuit of claim 11 wherein the metal wiring is thin film metal wiring.
Claim 15
Dependent Claim
23 words
The integrated circuit of claim 11 wherein the metal wiring is selected from the group consisting of copper, silver, gold, alloys, and superconductors.
Claim 16
Dependent Claim
12 words
The integrated circuit of claim 11 wherein the metal wiring is copper.
Claim 17
Dependent Claim
41 words
A wiring board comprising: A) a wiring board subassembly containing thereon metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering the metal wiring; and C) a dielectric layer covering the silicon carbide layer.
Claim 18
Dependent Claim
41 words
A wiring board comprising: A) a wiring board subassembly containing thereon metal wiring having a resistivity less than about 2.5 microhm-centimeters; B) an amorphous silicon carbide layer covering the metal wiring; and C) a dielectric layer covering the silicon carbide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-05 | 2010-04-06 | 2010-10-06 | $7700.00 | Window Closed / Lapsed |