Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Claim 1

An improved semiconductor device of the type including a semiconductor substrate with an outwardfacing surface having a plurality of P-N junctions disposed thereon, and an electrically insulating film covering each of the junctions, the insulating film including a layer of silicon dioxide formed directly on the substrate surface, the silicon dioxide having a characteristic coefficient of thermal expansion differing from that of the substrate, the improvement comprising film means selected for accommodating thermal stresses produced in the insulating film during significant temperature changes and for protecting the substrate and the insulating film from externally-incident contamination, said film means being formed on and substantially covering the insulating film and the substrate surface, said film means including a silicon carbide film and a silicate glass film selected from the group consisting of P-SG, P.As-SG, P.B-SG and P.Sb-SG, where SG means "silicate glass," said silicate glass film being formed between said silicon carbide film and the insulating film, and wherein said silicate glass film and said silicon carbide film cover substantially all the surface.