US3451867A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
Assignee: General Electric Co
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Filing: 1966-05-31
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Granted: 1969-06-24
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Expires: 1986-05-31
Abstract
No abstract record available.
Inventors
- 👤 Ernest A Taft Jr
- 👤 Peter V Gray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P76/00; H10P76/40; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/148; Y10S148/151; Y10S148/167
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
91 words
A METHOD OF PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING THE STEPS OF: PROVIDING A MONOCRYSTALLINE SILICON WAFER OF PREDETERMINED CONDUCTIVITY; FORMING A LAYER OF SILICON CARBIDE OVER SELECTED AREAS OF A SURFACE OF SAID WAFER, SAID LAYER BEING EFFECTIVE TO MASK SAID SELECTED AREAS; ESTABLISHING AN ATMOSPHERE CONTAINING AN ELEMENT CAPABLE OF PRODUCING A DIFFERENT CONDUCTIVITY IN SILICON; AND HEATING SAID WAFER IN SAID ATMOSPHERE TO DIFFUSE SAID ELEMENT INTO SAID WAFER ONLY AT SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE TO CONVERT A REGION OF SAID SILICON TO DIFFERENT CONDUCTIVITY.
Claim 2
Independent Claim
91 words
A METHOD OF PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING THE STEPS OF: PROVIDING A MONOCRYSTALLINE SILICON WAFER OF PREDETERMINED CONDUCTIVITY; FORMING A LAYER OF SILICON CARBIDE OVER SELECTED AREAS OF A SURFACE OF SAID WAFER, SAID LAYER BEING EFFECTIVE TO MASK SAID SELECTED AREAS; ESTABLISHING AN ATMOSPHERE CONTAINING AN ELEMENT CAPABLE OF PRODUCING A DIFFERENT CONDUCTIVITY IN SILICON; AND HEATING SAID WAFER IN SAID ATMOSPHERE TO DIFFUSE SAID ELEMENT INTO SAID WAFER ONLY AT SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE TO CONVERT A REGION OF SAID SILICON TO DIFFERENT CONDUCTIVITY.
Claim 3
Dependent Claim
42 words
A METHOD AS CLAIMED IN CLAIM 1 WHEREIN SAID REGION OF SAID SILICON OF DIFFERENT CONDUCTIVITY IS PROVIDED BY EPITAXIALLY DEPOSITING FROM A SOURCE A LAYER OF SILICON OF OPPOSITE CONDUCTIVITY ON THE SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE LAYER.
References Cited (Backward Citations)
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Cited
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Cited
US3347719A
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US3342650A
Cited
US3397448A
Cited
US3389022A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-06-23 | 1972-12-23 | 1973-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-06-23 | 1976-12-23 | 1977-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-06-23 | 1980-12-23 | 1981-06-24 | $7700.00 | Window Closed / Lapsed |