US3347719A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor components
Assignee: Siemens and Halske AG
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Filing: 1964-08-10
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Granted: 1967-10-17
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Expires: 1984-08-10
Abstract
No abstract record available.
Inventors
- 👤 Heywang Walter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:10
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/06; Y10S148/062; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
108 words
A METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS HAVING LIMITED REGIONS OF RESPECTIVELY DIFFERENT CONDUCTANCES PRODUCED BY DIFFUSING DOPING MATERIAL INTO THE OXIDE-COATED SEMICONDUCTOR CRYSTALS, WHICH COMPRISES DEPOSITING, IN THE AREAS THAT ARE TO BE SUBSEQUENTLY SUBJECTED TO DIFFUSION, AT LEAST ONE ADDITIONAL SUBSTANCE UPON THE OXIDE COATING OF THE SEMICONDUCTOR CRYSTAL SO THAT THE ADDITION SUBSTANCE FORMS WITH THE OXIDE COATING A SYSTEM WHICH FORMS AT THE DIFFUSION TEMPERATURE A PHASE PERMEABLE TO THE DIFFUSION MATERIAL, PREFERABLY A VITREOUS MELT, WITHOUT EXPOSING THE SEMICONDUCTOR SURFACE, HEATING THE COATED SEMICONDUCTOR SURFACE TO PRODUCE SAID VIRTREOUS MELT, AND DIFFUSING DOPING SUBSTANCE THROUGH THE MELT AT DIFFUSION TEMPERATURE INTO SAID SEMICONDUCTOR CRYSTAL.
Claim 2
Independent Claim
108 words
A METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS HAVING LIMITED REGIONS OF RESPECTIVELY DIFFERENT CONDUCTANCES PRODUCED BY DIFFUSING DOPING MATERIAL INTO THE OXIDE-COATED SEMICONDUCTOR CRYSTALS, WHICH COMPRISES DEPOSITING, IN THE AREAS THAT ARE TO BE SUBSEQUENTLY SUBJECTED TO DIFFUSION, AT LEAST ONE ADDITIONAL SUBSTANCE UPON THE OXIDE COATING OF THE SEMICONDUCTOR CRYSTAL SO THAT THE ADDITION SUBSTANCE FORMS WITH THE OXIDE COATING A SYSTEM WHICH FORMS AT THE DIFFUSION TEMPERATURE A PHASE PERMEABLE TO THE DIFFUSION MATERIAL, PREFERABLY A VITREOUS MELT, WITHOUT EXPOSING THE SEMICONDUCTOR SURFACE, HEATING THE COATED SEMICONDUCTOR SURFACE TO PRODUCE SAID VIRTREOUS MELT, AND DIFFUSING DOPING SUBSTANCE THROUGH THE MELT AT DIFFUSION TEMPERATURE INTO SAID SEMICONDUCTOR CRYSTAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-10-16 | 1971-04-17 | 1971-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-10-16 | 1975-04-17 | 1975-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-10-16 | 1979-04-17 | 1979-10-17 | $7700.00 | Window Closed / Lapsed |