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US3183129A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming a semiconductor

Assignee: Fairchild Semiconductor Corp
•
Filing: 1963-07-15
•
Granted: 1965-05-11
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Expires: 1983-07-15
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Abstract

No abstract record available.

Inventors

  • 👤 Gareth A Tripp

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 12:50
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D99/00; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/062; Y10S148/151; Y10S438/00; Y10S438/914; Y10S438/919; Y10S438/923

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 95 words
AN IMPROVED METHOD OF FORMING A TRANSISTOR COMPRISING THE STEPS OF: (A) MASKING A PORTION OF ONE SURFACE OF AN N-TYPE SILICON WAFER WITH SILICONOXIDE TO DEFINE THE LATERAL EXTENT OF THE P-TYPE BASE REGION TO BE FORMED THEREUNDER AND TO LEAVE AN EXPOSED PORTION OF THE SURFACE FOR THE DIFFUSION OF A DONOR IMPURITY; (B) DIFFUSING A DONOR IMPURITY WHICH IS MASKED BY SILICON OXIDE INTO THE WAFER FROM SAID SURFACE TO ESTABLISH A RECIPROCAL REGION IN SAID WAFER OF A PREDETRERMINED DEPTH HAVING ADDITONAL DONOR IMPURITIES SURROUNDING THE MASKED PORTIONS OF SAID WAFER;
Claim 2
Dependent Claim 95 words
AN IMPROVED METHOD OF FORMING A TRANSISTOR COMPRISING THE STEPS OF: (A) MASKING A PORTION OF ONE SURFACE OF AN N-TYPE SILICON WAFER WITH SILICONOXIDE TO DEFINE THE LATERAL EXTENT OF THE P-TYPE BASE REGION TO BE FORMED THEREUNDER AND TO LEAVE AN EXPOSED PORTION OF THE SURFACE FOR THE DIFFUSION OF A DONOR IMPURITY; (B) DIFFUSING A DONOR IMPURITY WHICH IS MASKED BY SILICON OXIDE INTO THE WAFER FROM SAID SURFACE TO ESTABLISH A RECIPROCAL REGION IN SAID WAFER OF A PREDETRERMINED DEPTH HAVING ADDITONAL DONOR IMPURITIES SURROUNDING THE MASKED PORTIONS OF SAID WAFER;

References Cited (Backward Citations)

US2910394A Cited
US3059123A Cited
US2931743A Cited
US2802760A Cited
FR1172813A Cited
US2954486A Cited
US3036250A Cited
US2981877A Cited
US3147152A Cited
US3069604A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1968-05-10 1968-11-09 1969-05-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1972-05-10 1972-11-09 1973-05-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1976-05-10 1976-11-09 1977-05-11 $7700.00 Window Closed / Lapsed

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