Patent US3451867A successfully refreshed from Google Patents.
US3451867A
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Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
Assignee: General Electric Co
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Filing: 1966-05-31
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Granted: 1969-06-24
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Expires: 1986-05-31
Abstract
No abstract record available.
Inventors
- 👤 Ernest A Taft Jr
- 👤 Peter V Gray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P76/00; H10P76/40; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/148; Y10S148/151; Y10S148/167
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
91 words
A METHOD OF PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING THE STEPS OF: PROVIDING A MONOCRYSTALLINE SILICON WAFER OF PREDETERMINED CONDUCTIVITY; FORMING A LAYER OF SILICON CARBIDE OVER SELECTED AREAS OF A SURFACE OF SAID WAFER, SAID LAYER BEING EFFECTIVE TO MASK SAID SELECTED AREAS; ESTABLISHING AN ATMOSPHERE CONTAINING AN ELEMENT CAPABLE OF PRODUCING A DIFFERENT CONDUCTIVITY IN SILICON; AND HEATING SAID WAFER IN SAID ATMOSPHERE TO DIFFUSE SAID ELEMENT INTO SAID WAFER ONLY AT SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE TO CONVERT A REGION OF SAID SILICON TO DIFFERENT CONDUCTIVITY.
Claim 2
Independent Claim
91 words
A METHOD OF PRODUCING A SEMICONDUCTIVE DEVICE COMPRISING THE STEPS OF: PROVIDING A MONOCRYSTALLINE SILICON WAFER OF PREDETERMINED CONDUCTIVITY; FORMING A LAYER OF SILICON CARBIDE OVER SELECTED AREAS OF A SURFACE OF SAID WAFER, SAID LAYER BEING EFFECTIVE TO MASK SAID SELECTED AREAS; ESTABLISHING AN ATMOSPHERE CONTAINING AN ELEMENT CAPABLE OF PRODUCING A DIFFERENT CONDUCTIVITY IN SILICON; AND HEATING SAID WAFER IN SAID ATMOSPHERE TO DIFFUSE SAID ELEMENT INTO SAID WAFER ONLY AT SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE TO CONVERT A REGION OF SAID SILICON TO DIFFERENT CONDUCTIVITY.
Claim 3
Dependent Claim
42 words
A METHOD AS CLAIMED IN CLAIM 1 WHEREIN SAID REGION OF SAID SILICON OF DIFFERENT CONDUCTIVITY IS PROVIDED BY EPITAXIALLY DEPOSITING FROM A SOURCE A LAYER OF SILICON OF OPPOSITE CONDUCTIVITY ON THE SURFACE REGIONS NOT COVERED BY SAID SILICON CARBIDE LAYER.
References Cited (Backward Citations)
US3157541A
Cited
US3183129A
Cited
US3347719A
Cited
US3342650A
Cited
US3397448A
Cited
US3389022A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1972-06-23 | 1972-12-23 | 1973-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1976-06-23 | 1976-12-23 | 1977-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1980-06-23 | 1980-12-23 | 1981-06-24 | $7700.00 | Window Closed / Lapsed |