US2937324A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon carbide rectifier
Assignee: Westinghouse Electric Corp
•
Filing: 1959-02-05
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Granted: 1960-05-17
•
Expires: 1979-02-05
Abstract
No abstract record available.
Inventors
- 👤 Leonard J Kroko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:24
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D8/043; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/148
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
65 words
A SEMICONDUCTOR RECTIFIER STRUCTURE COMPRISING A MONOCRYSTALLINE SILICON CARBIDE WAFER HAVING AN INTERMEDIATE ZONE CONTAINING A P-N JUNCTION, A FIRST TERMINAL ZONE CONTIGUOUS WITH ONE SIDE OF THE INTERMEDIATE ZONE IN WHICH A DONOR IMPURITY IS THE PREDOMINANT SIGNIFICANT IMPURITY, A SECOND TERMINAL ZONE CONTIGUOUS WITH THE OPPOSITE SIDE OF THE INTERMEDIATE ZONE IN WHICH AN ACCEPTOR IMPURITY IS THE PREDOMINANT SIGNIFICANT IMPURITY, AND A
Claim 2
Dependent Claim
65 words
A SEMICONDUCTOR RECTIFIER STRUCTURE COMPRISING A MONOCRYSTALLINE SILICON CARBIDE WAFER HAVING AN INTERMEDIATE ZONE CONTAINING A P-N JUNCTION, A FIRST TERMINAL ZONE CONTIGUOUS WITH ONE SIDE OF THE INTERMEDIATE ZONE IN WHICH A DONOR IMPURITY IS THE PREDOMINANT SIGNIFICANT IMPURITY, A SECOND TERMINAL ZONE CONTIGUOUS WITH THE OPPOSITE SIDE OF THE INTERMEDIATE ZONE IN WHICH AN ACCEPTOR IMPURITY IS THE PREDOMINANT SIGNIFICANT IMPURITY, AND A
References Cited (Backward Citations)
US2273704A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-05-17 | 1963-11-16 | 1964-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-05-17 | 1967-11-16 | 1968-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-05-17 | 1971-11-16 | 1972-05-17 | $7700.00 | Window Closed / Lapsed |