US4647472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of producing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-07-26
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Granted: 1987-03-03
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Expires: 2005-07-26
Abstract
Abstract A semiconductor device which has a protective film having a high blocking capacity against contaminating ions and a high shielding effect against an external electric field. The protective film is formed on a surface of the semiconductor device. The protective film consists essentially of an amorphous or polycrystalline silicon carbide which contains at least one element selected from the group consisting of hydrogen, nitrogen, oxygen and a halogen.
Inventors
- 👤 Shunichi Hiraki
- 👤 Yoshikazu Usuki
- 👤 Kazuhiro Takimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:48
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/134; H10P; H10P14/00; H10P14/60; H10W42/00; H10W42/60; H10W74/40; H10W74/43; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/6903; H10P14/6905; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/902; Y10S438/958
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
81 words
A process of producing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having an element region; and forming a protective film on said semiconductor substrate by plasma chemical vapor deposition by using a gas mixture of SiH m X n (wherein X is a halogen, each of m and n is an integer falling within a range between 0 and 4, and m+n=4), a saturated hydrocarbon selected from the group consisting of methane, and propane, and nitrogen monoxide.
Claim 2
Dependent Claim
81 words
A process of producing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having an element region; and forming a protective film on said semiconductor substrate by plasma chemical vapor deposition by using a gas mixture of SiH m X n (wherein X is a halogen, each of m and n is an integer falling within a range between 0 and 4, and m+n=4), a saturated hydrocarbon selected from the group consisting of methane, and propane, and nitrogen monoxide.
Claim 3
Dependent Claim
51 words
A process of producing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having an element region; and forming a protective film by reduced pressure chemical vapor deposition using a gas mixture of silane, a saturated hydrocarbon selected from the group consisting of methane, and propane, and nitrogen monoxide.
Claim 4
Dependent Claim
51 words
A process of producing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having an element region; and forming a protective film by reduced pressure chemical vapor deposition using a gas mixture of silane, a saturated hydrocarbon selected from the group consisting of methane, and propane, and nitrogen monoxide.
Claim 5
Dependent Claim
33 words
The process of claim 1, wherein the ratio of SiH m X n to propane the saturated hydrocarbon to nitrogen monoxide in the gas mixture is about 40 to 1,200 to 15 cc/min.
Claim 6
Dependent Claim
37 words
The process of claim 1, wherein the temperature during the forming step is in the range of about 350° C. to 600° C. and the pressure is in the range of about 0.1 torr to 1.0 torr.
Claim 7
Dependent Claim
14 words
The process of claim 1, wherein the semiconductor substrate is a silicon semiconductor substrate.
Claim 8
Dependent Claim
24 words
The process of claim 2, wherein the ratio of silane to propane the saturated hydrocarbon in the gas mixture is about 1 to 10.
Claim 9
Dependent Claim
17 words
The process of claim 2, wherein the temperature during the forming step is greater than 800° C.
Claim 10
Dependent Claim
14 words
The process of claim 2, wherein the semiconductor substrate is a silicon semiconductor substrate.
References Cited (Backward Citations)
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GB1566072A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-02 | 1990-09-01 | 1991-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-02 | 1994-09-01 | 1995-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-02 | 1998-09-01 | 1999-03-03 | $7700.00 | Window Closed / Lapsed |