US4559552A
Expired / Lapsed
US
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PIN semiconductor photoelectric conversion device with two oxide layers
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1983-05-24
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Granted: 1985-12-17
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Expires: 2003-05-24
Abstract
Abstract A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, on I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively. The first non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed by a non-single-crystal semiconductor layer on the side of incidence of light. And the second electrode is formed by a reflective electrode.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:49
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F77/20; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
177 words
A PIN semiconductor photoelectric conversion device comprising: a laminated member including at least a first conductivity type first non-single-crystal semiconductor layer forming a first major surface of the laminated member, an I-type second non-single-crystal semiconductor layer, and a second conductivity type third non-single-crystal semiconductor layer forming a second major surface of the laminated member; a light transparent first electrode making ohmic contact with the first non-single-crystal semiconductor layer through which light enters in the laminated member; and a reflective second electrode formed on the third non-single-crystal semiconductor layer to make ohmic contact therewith; wherein the reflective second electrode has a light transparent conductive metal oxide layer formed on the third non-single-crystal semiconductor layer and a reflective conductive metal layer formed on the light transparent conductive layer; wherein the third non-single-crystal semiconductor layer contains phosphorus as an N-conductive type impurity and is N-type; and wherein the light transparent conductive metal oxide layer of the reflective electrode is made of indium oxide or a metal oxide consisting of indium oxide containing 1 to 10 weight percent of other materials.
Claim 2
Dependent Claim
177 words
A PIN semiconductor photoelectric conversion device comprising: a laminated member including at least a first conductivity type first non-single-crystal semiconductor layer forming a first major surface of the laminated member, an I-type second non-single-crystal semiconductor layer, and a second conductivity type third non-single-crystal semiconductor layer forming a second major surface of the laminated member; a light transparent first electrode making ohmic contact with the first non-single-crystal semiconductor layer through which light enters in the laminated member; and a reflective second electrode formed on the third non-single-crystal semiconductor layer to make ohmic contact therewith; wherein the reflective second electrode has a light transparent conductive metal oxide layer formed on the third non-single-crystal semiconductor layer and a reflective conductive metal layer formed on the light transparent conductive layer; wherein the third non-single-crystal semiconductor layer contains phosphorus as an N-conductive type impurity and is N-type; and wherein the light transparent conductive metal oxide layer of the reflective electrode is made of indium oxide or a metal oxide consisting of indium oxide containing 1 to 10 weight percent of other materials.
Claim 3
Dependent Claim
26 words
A PIN semiconductor photoelectric conversion device according to claim 1, wherein the reflective conductive metal layer of the reflective electrode is made of aluminum or silver.
Claim 4
Dependent Claim
44 words
A PIN semiconductor photoelectric conversion device according to claim 1, wherein the first non-single-crystal semiconductor layer is P-type, contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the first electrode and columnar in shape.
Claim 5
Dependent Claim
40 words
A PIN semiconductor photoelectric conversion device according to claim 1, wherein the third non-single-crystal semiconductor layer contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the I-type second non-single-crystal semiconductor.
Claim 6
Dependent Claim
75 words
A PIN semiconductor photoelectric conversion device according to claim 1 wherein the first non-single-crystal semiconductor layer is P-type, contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the first electrode and columnar in shape, and wherein the third non-single-crystal semiconductor layer contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the I-type second non-single-crystal semiconductor.
Claim 7
Dependent Claim
31 words
A PIN semiconductor photoelectric conversion device according to claim 1, wherein the first non-single-crystal semiconductor layer is P-type and has larger energy band gap than does the I-type second non-single-crystal semiconductor.
Claim 8
Dependent Claim
176 words
A PIN semiconductor photoelectric conversion device comprising: a laminated member including at least a first conductivity type first non-single-crystal semiconductor layer forming a first major surface of the laminated member, an I-type second non-single-crystal semiconductor layer, a second conductivity type third non-single-crystal semiconductor layer forming a second major surface of the laminated member; a light transparent first electrode making ohmic contact with the first non-single-crystal semiconductor layers through which light enters in the laminated member; and a reflective second electrode formed on the third non-single-crystal semiconductor layer to make ohmic contact therewith; wherein the reflective second electrode has a light transparent conductive metal oxide layer formed on the third non-single-crystal semiconductor layer and a reflective conductive metal layer formed on the light transparent conductive layer; wherein the third non-single-crystal semiconductor layer contains boron as a P-conductivity type impurity and is P-type; and wherein the light transparent conductive metal oxide layer of the reflective electrode is made of tin oxide or a metal oxide consisting of tin oxide containing 1 to 10 weight percent of other materials.
Claim 9
Dependent Claim
176 words
A PIN semiconductor photoelectric conversion device comprising: a laminated member including at least a first conductivity type first non-single-crystal semiconductor layer forming a first major surface of the laminated member, an I-type second non-single-crystal semiconductor layer, a second conductivity type third non-single-crystal semiconductor layer forming a second major surface of the laminated member; a light transparent first electrode making ohmic contact with the first non-single-crystal semiconductor layers through which light enters in the laminated member; and a reflective second electrode formed on the third non-single-crystal semiconductor layer to make ohmic contact therewith; wherein the reflective second electrode has a light transparent conductive metal oxide layer formed on the third non-single-crystal semiconductor layer and a reflective conductive metal layer formed on the light transparent conductive layer; wherein the third non-single-crystal semiconductor layer contains boron as a P-conductivity type impurity and is P-type; and wherein the light transparent conductive metal oxide layer of the reflective electrode is made of tin oxide or a metal oxide consisting of tin oxide containing 1 to 10 weight percent of other materials.
Claim 10
Dependent Claim
26 words
A PIN semiconductor photoelectric conversion device according to claim 7, wherein the reflective conductive metal layer of the reflective electrode is made of aluminum on silver.
Claim 11
Dependent Claim
44 words
A PIN semiconductor photoelectric conversion device according to claim 7, whrein the first non-single-crystal semiconductor layer is P-type, contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the first electrode and columnar in shape.
Claim 12
Dependent Claim
40 words
A PIN semiconductor photoelectric conversion device according to claim 7, wherein the third non-single-crystal semiconductor layer contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the I-type second non-single-crystal semiconductor.
Claim 13
Dependent Claim
75 words
A PIN semiconductor photoelectric conversion device according to claim 7, wherein the first non-single-crystal semiconductor layer is P-type, contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the first electrode and columnar in shape, and wherein the third non-single-crustal semiconductor layer contains a recombination center neutralizer and has a fibrous structure grown in a direction perpendicular to the surface of the I-type second non-single-crystal semiconductor.
Claim 14
Dependent Claim
31 words
A PIN semiconductor photoelectric conversion device according to claim 1, wherein the first non-single-crystal semiconductor layer is N-type and has larger energy band gap than does the I-type second non-single-crystal semiconductor.
Claim 15
Dependent Claim
82 words
A PIN semiconductor-photoelectric conversion device as in claim 1 where said light transparent electrode has a light transparent conductive metal oxide layer formed on the first non-single-crystal semiconductor layer wherein the first non-single-crystal semiconductor layer contains boron as a P-type conductivity type impurity and is P-type and where the light transparent conductive metal oxide layer of the first electrode is made of tim oxide or a metal oxide consisting of tin oxide containing 1 to 10 weight percent of further other materials.
Claim 16
Dependent Claim
82 words
A PIN semiconductor-photoelectric conversion device as in claim 7 where said light transparent electrode has a light transparent conductive metal oxide layer formed on the first non-single-crystal semiconductor layer wherein the first non-single-crystal semiconductor layer contains phosphorous as an N-type conductivity type impurity and is N-type and where the light transparent conductive metal oxide layer of the first electrode is made of indium oxide of a metal oxide consisting of indium oxide containing 1 to 10 weight percent of further other materials.
Claim 17
Dependent Claim
18 words
A PIN semiconductor-photoelectric conversion device as in claim 1 where said other materials consist essentially of tin oxide.
Claim 18
Dependent Claim
19 words
A PIN semiconductor-photoelectric conversion device as in claim 13 where said further other materials consist essentially of indium oxide.
Claim 19
Dependent Claim
18 words
A PIN semiconductor-photoelectric conversion device as in claim 7 wherein said other materials consist essentially of indium oxide.
Claim 20
Dependent Claim
19 words
A PIN semiconductor-photoelectric conversion device as in claim 14 where said further other materials consist essentially of tin oxide.
References Cited (Backward Citations)
JPS55108780A
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GB2083703A
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US4434318A
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US4433202A
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US4401840A
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US4442310A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-12-16 | 1989-06-17 | 1989-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-12-16 | 1993-06-17 | 1993-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-12-16 | 1997-06-17 | 1997-12-17 | $7700.00 | Window Closed / Lapsed |