Patent US5817576A successfully refreshed from Google Patents.
US5817576A
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Utilization of SiH4 soak and purge in deposition processes
Assignee: Applied Materials Inc
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Filing: 1996-11-05
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Granted: 1998-10-06
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Expires: 2016-11-05
Abstract
Abstract A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH 4 into the chamber. Preferably, WSi x is deposited on a semiconductor wafer using a mixture comprising WF 6 , dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF 6 and dichlorosilane by flowing SiH 4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH 4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi x , on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH 4 .
Inventors
- 👤 Meng Chu Tseng
- 👤 Mei Chang
- 👤 Ramanujapuram A. Srinivas
- 👤 Klaus-Dieter Rinnen
- 👤 Moshe Eizenberg
- 👤 Susan Telford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:49
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4408; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; C23C16/02; C23C16/0209; C23C16/0218; C23C16/22; C23C16/30; C23C16/42; C23C16/56; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
61 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of: (i) depositing a refractory metal suicide film on a surface of said substrate, and (ii) purging said chamber of residual gases remaining from said depositing step by flowing SiH 4 into said chamber prior to removal of the substrate from the chamber.
Claim 2
Independent Claim
61 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of: (i) depositing a refractory metal suicide film on a surface of said substrate, and (ii) purging said chamber of residual gases remaining from said depositing step by flowing SiH 4 into said chamber prior to removal of the substrate from the chamber.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said substrate is a semiconductor wafer.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein in step (i) WSi x is deposited on said surface of said substrate.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein in step (ii) said SiH 4 is combined with a noble gas.
Claim 6
Independent Claim
69 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of (i) depositing WSi x on a surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas, and (ii) purging said chamber of residual WF 6 , and dichlorosilane by flowing SiH 4 into said chamber prior to removal of the substrate from the chamber.
Claim 7
Independent Claim
69 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of (i) depositing WSi x on a surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas, and (ii) purging said chamber of residual WF 6 , and dichlorosilane by flowing SiH 4 into said chamber prior to removal of the substrate from the chamber.
Claim 8
Dependent Claim
12 words
The method of claim 5 wherein said substrate is a semiconductor wafer.
Claim 9
Dependent Claim
17 words
The method of claim 5 wherein step (ii) is carried out for about 10 to 30 seconds.
Claim 10
Dependent Claim
21 words
The method of claim 5 wherein in step (ii) the flowrate of said SiH 4 is about 300 to 500 (sccm).
Claim 11
Dependent Claim
20 words
The method of claim 5 wherein the pressure in said chamber during step (ii) is about 0.5 to 1.0 torr.
Claim 12
Dependent Claim
18 words
The method of claim 5 wherein in step (ii) said SiH 4 is combined with a noble gas.
Claim 13
Dependent Claim
18 words
The method of claim 5 further comprising the step of (iii) removing said SiH 4 from said chamber.
Claim 14
Dependent Claim
42 words
The method of claim 7 wherein prior to step (i) said substrate is introduced into said chamber and said chamber is conditioned by introducing gas consisting of SiH 4 , or SiH 4 in combination with a noble gas, into the chamber.
Claim 15
Dependent Claim
19 words
The method of claim 12 wherein said conditioning is carried out for about 15 seconds to about 1 minute.
Claim 16
Dependent Claim
22 words
The method of claim 13 wherein in said conditioning step the flowrate of said SiH 4 is about 100 to 500 sccm.
Claim 17
Dependent Claim
21 words
The method of claim 13 wherein the pressure in said chamber during said conditioning step is about 1 to 10 torr.
Claim 18
Dependent Claim
25 words
The method of claim 5 wherein said chamber has a bottom portion and said bottom portion is purged with argon at least during step (ii).
Claim 19
Independent Claim
93 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of (i) introducing said substrate into said chamber, (ii) flowing SiH 4 into said chamber for about 15 seconds to about 1 minute, (iii) depositing WSi x on a surface of said substrate, (iv) at least partially purging said vacuum processing apparatus by flowing dichlorosilane into said apparatus, and (v) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber after ceasing the flow of dichlorosilane into said apparatus.
Claim 20
Independent Claim
93 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of (i) introducing said substrate into said chamber, (ii) flowing SiH 4 into said chamber for about 15 seconds to about 1 minute, (iii) depositing WSi x on a surface of said substrate, (iv) at least partially purging said vacuum processing apparatus by flowing dichlorosilane into said apparatus, and (v) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber after ceasing the flow of dichlorosilane into said apparatus.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein said substrate is a semiconductor wafer.
Claim 22
Dependent Claim
16 words
The method of claim 17 wherein said substrate is removed from said chamber after step (v).
Claim 23
Dependent Claim
25 words
The method of claim 17 wherein said chamber has a bottom portion and said bottom portion is purged with argon at least during step (iii).
Claim 24
Independent Claim
91 words
A method of processing semiconductor wafers in a chamber of a vacuum processing apparatus which comprises the steps of: (i) depositing a film of WSi x on a surface of a semiconductor wafer using a mixture comprising WF 6 , dichlorosilane and a noble gas, and (ii) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber, and (iii) whereby the sheet resistance of said WSi x film does not decrease by more than 3% over twenty-five consecutive repetitions of steps (i)-(ii) on different wafers.
Claim 25
Independent Claim
91 words
A method of processing semiconductor wafers in a chamber of a vacuum processing apparatus which comprises the steps of: (i) depositing a film of WSi x on a surface of a semiconductor wafer using a mixture comprising WF 6 , dichlorosilane and a noble gas, and (ii) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber, and (iii) whereby the sheet resistance of said WSi x film does not decrease by more than 3% over twenty-five consecutive repetitions of steps (i)-(ii) on different wafers.
Claim 26
Independent Claim
131 words
A method of processing semiconductor wafers in a chamber of a vacuum processing apparatus which comprises the steps of: (i) introducing a semiconductor wafer into said chamber, (ii) flowing SiH 4 into said chamber, (iii) depositing WSi x on a surface of said semiconductor wafer using a mixture comprising WF 6 , dichlorosilane and a noble gas, (iv) at least partially purging said vacuum processing apparatus by flowing dichlorosilane into said apparatus, (v) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber after ceasing the flow of dichlorosilane into said chamber, (vi) removing said semiconductor wafer from said chamber, and (vii) whereby the sheet resistance of said WSi x film does not decrease by more than 3% over twenty-five consecutive repetitions of steps (i)-(vi).
Claim 27
Independent Claim
131 words
A method of processing semiconductor wafers in a chamber of a vacuum processing apparatus which comprises the steps of: (i) introducing a semiconductor wafer into said chamber, (ii) flowing SiH 4 into said chamber, (iii) depositing WSi x on a surface of said semiconductor wafer using a mixture comprising WF 6 , dichlorosilane and a noble gas, (iv) at least partially purging said vacuum processing apparatus by flowing dichlorosilane into said apparatus, (v) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber after ceasing the flow of dichlorosilane into said chamber, (vi) removing said semiconductor wafer from said chamber, and (vii) whereby the sheet resistance of said WSi x film does not decrease by more than 3% over twenty-five consecutive repetitions of steps (i)-(vi).
Claim 28
Independent Claim
93 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of; (i) introducing said substrate into said chamber, (ii) flowing a gas consisting of SiH 4 , or SiH 4 in combination with a noble gas, into said chamber, (iii) subsequently depositing a refractory metal silicide film on a surface of said substrate at a temperature below about 650° C., (iv) purging said chamber by flowing SiH 4 into said chamber after ceasing depositing the refractory metal silicide and prior to removal of the substrate.
Claim 29
Independent Claim
93 words
A method of processing a substrate in a chamber of a vacuum processing apparatus which comprises the steps of; (i) introducing said substrate into said chamber, (ii) flowing a gas consisting of SiH 4 , or SiH 4 in combination with a noble gas, into said chamber, (iii) subsequently depositing a refractory metal silicide film on a surface of said substrate at a temperature below about 650° C., (iv) purging said chamber by flowing SiH 4 into said chamber after ceasing depositing the refractory metal silicide and prior to removal of the substrate.
Claim 30
Dependent Claim
12 words
The method of claim 23 wherein said substrate is a semiconductor wafer.
Claim 31
Dependent Claim
25 words
The method of claim 23 wherein said SiH 4 is flowed into said chamber in step (ii) for about 15 seconds to about 1 minute.
Claim 32
Dependent Claim
17 words
The method of claim 23 wherein in step (iii) said refractory metal silicide is WSi x .
Claim 33
Dependent Claim
29 words
The method of claim 26 wherein said WSi x is deposited on said surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas.
Claim 34
Dependent Claim
16 words
The method of claim 1 wherein in step (ii) the substrate is positioned in the chamber.
Claim 35
Dependent Claim
28 words
The method of claim 27, wherein step (iv) comprises purging said chamber by flowing SiH 4 into said chamber after ceasing the flow of dichlorosilane into said chamber.
Claim 36
Independent Claim
73 words
A method of processing a substrate in a chamber of a vacuum processing apparatus, comprising: (i) depositing WSi x on a surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas; (ii) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber; (iii) removing said SiH 4 from said chamber; and (iv) removing said substrate from said chamber after step iii).
Claim 37
Independent Claim
73 words
A method of processing a substrate in a chamber of a vacuum processing apparatus, comprising: (i) depositing WSi x on a surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas; (ii) purging said chamber of residual WF 6 and dichlorosilane by flowing SiH 4 into said chamber; (iii) removing said SiH 4 from said chamber; and (iv) removing said substrate from said chamber after step iii).
Claim 38
Independent Claim
80 words
A method of processing a substrate in a chamber of a vacuum processing apparatus, comprising: (i) introducing said substrate into said chamber; (ii) flowing SiH 4 , alone or in combination with a noble gas, into said chamber; (iii) depositing a refractory metal silicide film on a surface of said substrate; and (iv) purging said chamber of residual gases remaining from depositing said silicide film by flowing SiH 4 into said chamber prior to removing the substrate from the chamber.
Claim 39
Independent Claim
80 words
A method of processing a substrate in a chamber of a vacuum processing apparatus, comprising: (i) introducing said substrate into said chamber; (ii) flowing SiH 4 , alone or in combination with a noble gas, into said chamber; (iii) depositing a refractory metal silicide film on a surface of said substrate; and (iv) purging said chamber of residual gases remaining from depositing said silicide film by flowing SiH 4 into said chamber prior to removing the substrate from the chamber.
Claim 40
Dependent Claim
28 words
The method of claim 31, wherein WSi x is deposited on said surface of said substrate using a mixture comprising WF 6 , dichlorosilane and a noble gas.
Claim 41
Dependent Claim
23 words
The method of claim 32, wherein residual WF 6 and dichlorosilane is purged from said chamber by flowing SiH 4 into said chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-05 | 2010-04-06 | 2010-10-06 | $7700.00 | Window Closed / Lapsed |