US5436200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Blanket tungsten deposition
Assignee: Fujitsu Ltd
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Filing: 1994-11-07
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Granted: 1995-07-25
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Expires: 2014-11-07
Abstract
Abstract A blanket tungsten deposition apparatus comprises a reactor the inside of which is evacuatable, a gas inlet means for introducing a reaction gas into the reactor, mount means for mounting an object substrate to be treated, penetration-preventing means for preventing penetration of gas, disposed to cover a peripheral portion of a surface of the object substrate to be treated and having an inner diameter smaller than a diameter of the object substrate and an outer perimeter larger than that of the object substrate, and another gas inlet means for introducing a gas to a space on the periphery of the object substrate covered by the penetration-preventing means. Growth of W film on a peripheral SiO 2 portion of substrate is prevented and hence production of particles caused by peeling-off of W film is prevented.
Inventors
- 👤 Kaoru Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:25
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45517; C23C16/04; C23C16/042; C23C16/45563; C23C16/4558; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
172 words
A method of manufacturing a semiconductor device comprising the steps of: mounting on a mount a semiconductor substrate having at least a surface portion covered with an adhesion layer for improving adhesion with tungsten and a surface portion not covered with the adhesion layer; partitioning a space on a surface of said semiconductor substrate spatially by partitioning member into a space on a first region including a substrate surface to be formed with a tungsten film and a space on a second region including at least all of the substrate surface not formed with said adhesion layer; forming a thin film of silicon on said first and second regions by introducing a silane based gas to said space of the first and second regions from respective gas ejecting holes; forming a tungsten silicide film by tungsten-silicidizing said thin film of silicon on said first region with a gas supplied to said space on said first region and further depositing tungsten silicide; and depositing a tungsten film on nuclei of said tungsten silicide.
Claim 2
Independent Claim
172 words
A method of manufacturing a semiconductor device comprising the steps of: mounting on a mount a semiconductor substrate having at least a surface portion covered with an adhesion layer for improving adhesion with tungsten and a surface portion not covered with the adhesion layer; partitioning a space on a surface of said semiconductor substrate spatially by partitioning member into a space on a first region including a substrate surface to be formed with a tungsten film and a space on a second region including at least all of the substrate surface not formed with said adhesion layer; forming a thin film of silicon on said first and second regions by introducing a silane based gas to said space of the first and second regions from respective gas ejecting holes; forming a tungsten silicide film by tungsten-silicidizing said thin film of silicon on said first region with a gas supplied to said space on said first region and further depositing tungsten silicide; and depositing a tungsten film on nuclei of said tungsten silicide.
Claim 3
Dependent Claim
20 words
A method of manufacturing a semiconductor device according to claim 1, wherein said silane based gas is silane or dichlorosilane.
Claim 4
Dependent Claim
49 words
A method of manufacturing a semiconductor device according to claim 1, wherein said adhesion layer comprises a titanium film and a film disposed on said titanium film and formed of materials of at least one species selected from a group consisting of titanium nitride, titanium tungstenide, and tungsten silicide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-24 | 1999-01-23 | 1999-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-24 | 2003-01-23 | 2003-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-24 | 2007-01-23 | 2007-07-25 | $7700.00 | Window Closed / Lapsed |