US5252132A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for producing semiconductor film
Assignee: Mitsubishi Electric Corp
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Filing: 1991-11-22
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Granted: 1993-10-12
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Expires: 2011-11-22
Abstract
Abstract A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.
Inventors
- 👤 Masao Oda
- 👤 Yoshiyuki Goto
- 👤 Toyomi Osige
- 👤 Tatsuya Iwasa
- 👤 Yoshimi Kinoshita
- 👤 Katsuhisa Kitano
- 👤 Kazuo Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:40
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/481; C23C16/488; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B25/14
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
188 words
A semiconductor film production apparatus comprising: a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to said reaction vessel, a gas discharge port for discharging the reaction gas from said reaction vessel after a reaction, and a light-transmitting glass window; light irradiating means disposed outside said reaction vessel for irradiating a substrate in said reaction vessel through said light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in said reaction vessel for holding the substrate with a first surface facing said light irradiation means and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing said reaction vessel into two compartments, said ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and said light-transmitting glass window; and a reaction gas supply nozzle disposed in said substrate holder connected to said gas supply port and opposing the second surface of the substrate.
Claim 2
Dependent Claim
188 words
A semiconductor film production apparatus comprising: a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to said reaction vessel, a gas discharge port for discharging the reaction gas from said reaction vessel after a reaction, and a light-transmitting glass window; light irradiating means disposed outside said reaction vessel for irradiating a substrate in said reaction vessel through said light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in said reaction vessel for holding the substrate with a first surface facing said light irradiation means and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing said reaction vessel into two compartments, said ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and said light-transmitting glass window; and a reaction gas supply nozzle disposed in said substrate holder connected to said gas supply port and opposing the second surface of the substrate.
Claim 3
Dependent Claim
47 words
A semiconductor film production apparatus according to claim 1 wherein said cylindrical substrate holder has a retaining portion and said ring plate has a retained portion complementary with said retaining portion, said apparatus comprising a rotary drive guide on said cylindrical substrate holder for rotating the substrate.
Claim 4
Dependent Claim
24 words
A semiconductor film production apparatus according to claim 1 wherein said ring plate includes a projection for contacting a peripheral region of said substrate.
Claim 5
Dependent Claim
46 words
A semiconductor film production apparatus according to claim 1 wherein said light-transmitting glass window has an effective field diameter larger in area than the substrate and said light irradiation means includes a plurality of linear halogen lamps opposing the substrate and an area adjacent said substrate.
Claim 6
Dependent Claim
44 words
A semiconductor film production apparatus according to claim 1 wherein said light irradiation means includes a plurality of linear halogen lamps containing coiled filaments and opposing the substrate, the filaments of outer halogen lamps having greater pitches than the filaments of central halogen lamps.
Claim 7
Dependent Claim
44 words
A semiconductor film production apparatus according to claim 1 wherein said light irradiation means includes a first array of a plurality of linear halogen lamps opposite the substrate and a second array of linear halogen lamps spaced from said first array and orthogonal thereto.
Claim 8
Dependent Claim
26 words
A semiconductor film production apparatus according to claim 1 wherein said light irradiation means includes a plurality of linear halogen lamps disposed radially opposite the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |