Apparatus for growing vapor phase layer on semiconductor substrate

Claim 1

A chemical vapor deposition apparatus for rowing a vapor-phase deposition layer on a semiconductor substrate, comprising: a base plate having opposed surfaces; a container to be attached to and removed from one surface of the base plate, and to establish a chamber to be supplied with a gas; a bearing secured to the other surface of the base plate; a hollow shaft rotatably supported by the bearing, one end portion of said shaft extending into said chamber through said base plate; driving means for rotating the shaft; a casing arranged in the chamber, said casing being open at one end and mounted at the other end thereof to said one end portion of the shaft; a susceptor in the open one end of the casing, said susceptor having a supporting surface on which a semiconductor substrate is to be placed and a concave recess opposite from said supporting surface; a heat generator arranged in the casing for heating the susceptor and semiconductor substrate; a conductive support for supplying power to and supporting said heat generator, said conductive support extending through said hollow shaft to said casing; means for detecting the temperature of said heat generator, said detecting means extending through said hollow shaft to a distal end portion located in the concave recess of said susceptor; and control means for controlling the temperature of the heat generator in response to temperatures detected by the detecting means.