US5814533A — Semiconductor light emitting element and manufact…

Claim 1

Independent Claim 171 words

A manufacturing method of a semiconductor light emitting element comprising the steps of: (a) laminating a gallium nitride compound semiconductor layer for forming a luminous part on a substrate comprising at least an n-type layer and a p-type layer, by organic metal compound vapor phase growth method; (b) placing the gallium nitride compound semiconductor layer in a nitrogen gas atmosphere after laminating, lowering an ambient temperature to a temperature for growing a GaAs compound in vapor phase and annealing the p-type layer of the gallium nitride compound semiconductor layer; (c) forming a film of at least one type selected from a group consisting of GaAs, GaP, InAs, InP, all doped with Mg, and part of these group III elements replaced by Al on a surface of the gallium nitride compound semiconductor layer, as a protective layer in the nitrogen atmosphere; and (d) annealing the p-type layer of gallium nitride compound semiconductor layer while simultaneously forming the protective film, lowering to room temperature after annealing, and removing the protective film by etching.

Claim 2

Dependent Claim 171 words

A manufacturing method of a semiconductor light emitting element comprising the steps of: (a) laminating a gallium nitride compound semiconductor layer for forming a luminous part on a substrate comprising at least an n-type layer and a p-type layer, by organic metal compound vapor phase growth method; (b) placing the gallium nitride compound semiconductor layer in a nitrogen gas atmosphere after laminating, lowering an ambient temperature to a temperature for growing a GaAs compound in vapor phase and annealing the p-type layer of the gallium nitride compound semiconductor layer; (c) forming a film of at least one type selected from a group consisting of GaAs, GaP, InAs, InP, all doped with Mg, and part of these group III elements replaced by Al on a surface of the gallium nitride compound semiconductor layer, as a protective layer in the nitrogen atmosphere; and (d) annealing the p-type layer of gallium nitride compound semiconductor layer while simultaneously forming the protective film, lowering to room temperature after annealing, and removing the protective film by etching.

Claim 3

Dependent Claim 46 words

A manufacturing method of semiconductor light emitting element of claim 1, wherein the material gas is fed so that the protective film may be formed in a thickness of about 0.1 μm to about 2 μm by matching the film forming time with the annealing time.

Claim 4

Dependent Claim 76 words

A manufacturing method of semiconductor light emitting element comprising the steps of: (e) laminating a gallium nitride compound semiconductor layer having a luminous layer on a substrate comprising at least n-type layer and p-type layer; (f) forming n side electrode and p side electrodes to be electrically connected to the n-type layer and p-type layer; and (g) heating after forming the both electrodes, therein annealing the p-type layer and alloying the electrodes and semiconductor layer simultaneously.

Claim 5

Dependent Claim 76 words

A manufacturing method of semiconductor light emitting element comprising the steps of: (e) laminating a gallium nitride compound semiconductor layer having a luminous layer on a substrate comprising at least n-type layer and p-type layer; (f) forming n side electrode and p side electrodes to be electrically connected to the n-type layer and p-type layer; and (g) heating after forming the both electrodes, therein annealing the p-type layer and alloying the electrodes and semiconductor layer simultaneously.

Claim 6

Dependent Claim 74 words

A manufacturing method of semiconductor light emitting element of claim 3, wherein a sapphire substrate is used as the substrate, one of the n side electrode and p side electrode is formed on the surface of the laminated compound semiconductor layer, and part of the compound semiconductor layer laminated with the other electrode is etched, therein forming an exposed surface of n-type layer or p-type layer to be electrically connected with the other electrode.

Claim 7

Dependent Claim 29 words

A manufacturing method of semiconductor light emitting element of claim 3, wherein the surface of compound semiconductor layer and electrodes is covered with a protective film before heat treatment.

Claim 8

Dependent Claim 159 words

A manufacturing method of a semiconductor light emitting element comprising the steps of: (h) preparing a sapphire substrate of which principal plane is R plane of M plane; (i) laminating a gallium nitride compound semiconductor buffer layer on the principal plane of the sapphire substrate; (j) sequentially laminating a lower clad layer, an active clad layer, an upper clad layer, and a cap layer composed of gallium nitride compound semiconductor on the buffer layer by matching crystal lattice; (k) etching vertically to the sapphire substrate, along a (0001) plane of the gallium nitride compound semiconductor layer matched in crystal lattice, and exposing the buffer layer wherein the (0001) plane of the gallium nitride compound semiconductor layer is a side plane vertical to the substrate; (l) forming a metal film; (m) forming an electrode on the cap layer and the buffer layer exposed by etching, by patterning the metal film; and (n) separating the chip into every element by dicing.

Claim 9

Dependent Claim 159 words

A manufacturing method of a semiconductor light emitting element comprising the steps of: (h) preparing a sapphire substrate of which principal plane is R plane of M plane; (i) laminating a gallium nitride compound semiconductor buffer layer on the principal plane of the sapphire substrate; (j) sequentially laminating a lower clad layer, an active clad layer, an upper clad layer, and a cap layer composed of gallium nitride compound semiconductor on the buffer layer by matching crystal lattice; (k) etching vertically to the sapphire substrate, along a (0001) plane of the gallium nitride compound semiconductor layer matched in crystal lattice, and exposing the buffer layer wherein the (0001) plane of the gallium nitride compound semiconductor layer is a side plane vertical to the substrate; (l) forming a metal film; (m) forming an electrode on the cap layer and the buffer layer exposed by etching, by patterning the metal film; and (n) separating the chip into every element by dicing.

Claim 10

Dependent Claim 57 words

A manufacturing method of semiconductor light emitting element of claim 6, wherein the step of laminating the buffer layer consists of a step of forming a low temperature buffer layer at low temperature, and a step of forming a high temperature buffer layer at high temperature, and the exposed buffer layer is the high temperature buffer layer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2001-09-28	2002-03-30	2002-09-29	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2005-09-28	2006-03-30	2006-09-29	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2009-09-28	2010-03-30	2010-09-29	$7700.00	Window Closed / Lapsed

Semiconductor light emitting element and manufacturing method therefor

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