US5260231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the production of a semiconductor laser
Assignee: Sharp Corp
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Filing: 1992-12-30
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Granted: 1993-11-09
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Expires: 2012-12-30
Abstract
Abstract A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
Inventors
- 👤 Hidenori Kawanishi
- 👤 Taiji Morimoto
- 👤 Shinji Kaneiwa
- 👤 Hiroshi Hayashi
- 👤 Nobuyuki Miyauchi
- 👤 Seiki Yano
- 👤 Mitsuhiro Matsumoto
- 👤 Kazuaki Sasaki
- 👤 Masaki Kondo
- 👤 Takehiro Shiomoto
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:10
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/0281; H01S5/0201; H01S5/0282; H01S5/0283; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
73 words
A method for producing a semiconductor laser device which emits laser light from a facet, the device being comprised of a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, comprising: treating the facet with a sulfur-containing solution to form a film containing sulfur on the facet, and forming a protective film on the sulfur-containing film.
Claim 2
Independent Claim
73 words
A method for producing a semiconductor laser device which emits laser light from a facet, the device being comprised of a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, comprising: treating the facet with a sulfur-containing solution to form a film containing sulfur on the facet, and forming a protective film on the sulfur-containing film.
Claim 3
Dependent Claim
47 words
A method according to claim 1, wherein the sulfur-containing solution is selected from the group consisting of undiluted (NH 4 ) 2 S solutions, aqueous (NH 4 ) 2 S solutions, undiluted (NH 4 ) 2 S x solutions, and aqueous (NH 4 ) 2 S solutions.
Claim 4
Dependent Claim
38 words
A method according to claim 1, wherein said protective film is formed from an oxygen-free material selected from the group consisting of Si 3 N 4 , AlN, C, MgF 2 CaF 2 , NaF, ZnS, and ZnSe.
Claim 5
Dependent Claim
29 words
A method according to claim 1, wherein said facet is treated for a time of 1.5/× seconds or more when the sulfur concentration of said solution is × mol/l.
Claim 6
Dependent Claim
24 words
A method according to claim 1, wherein said protective film is formed by electron beam evaporation at a rate of 10 Å/sec or less.
Claim 7
Independent Claim
102 words
A method for producing a semiconductor laser device which emits laser light from a facet, the device comprising a multi-layered structure including a pair of electrodes and formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, comprising: treating the facet with a sulfur-containing solution to form the protective film directly on said facet wherein the sulfur-containing solution consists essentially of chemical elements selected from the group consisting of gallium, aluminum, arsenic, nitrogen, hydrogen, and sodium in addition to a sulfide to AlGaAs; and forming a protective film formed on the facet of said multi-layered structure.
Claim 8
Independent Claim
102 words
A method for producing a semiconductor laser device which emits laser light from a facet, the device comprising a multi-layered structure including a pair of electrodes and formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, comprising: treating the facet with a sulfur-containing solution to form the protective film directly on said facet wherein the sulfur-containing solution consists essentially of chemical elements selected from the group consisting of gallium, aluminum, arsenic, nitrogen, hydrogen, and sodium in addition to a sulfide to AlGaAs; and forming a protective film formed on the facet of said multi-layered structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |