US5171706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the production of a semiconductor laser device
Assignee: Sharp Corp
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Filing: 1991-08-01
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Granted: 1992-12-15
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Expires: 2011-08-01
Abstract
Abstract There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate to form a wafer; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; and cleaving the wafer along the striped groove to obtain a semiconductor laser device.
Inventors
- 👤 Mitsuhiro Matsumoto
- 👤 Kazuaki Sasaki
- 👤 Masaki Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:04
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/164; H10; H10P; H10P14/00; H10P14/60; H01S5/02; H01S5/0201; H01S5/0202; H01S5/028; H01S5/0281; H01S5/0282
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
110 words
A method for the production of a semiconductor laser device which emits laser light from a facet, comprising the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; cleaving the wafer along the striped groove to obtain a semiconductor laser device.
Claim 2
Independent Claim
110 words
A method for the production of a semiconductor laser device which emits laser light from a facet, comprising the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; cleaving the wafer along the striped groove to obtain a semiconductor laser device.
Claim 3
Dependent Claim
59 words
A method according to claim 1, wherein the sulfur containing solution is selected from the group consisting of undiluted (NH 4 ) 2 S solutions, aqueous (NH 4 ) 2 S solutions, undiluted (NH 4 ) 2 S x solutions, aqueous (NH 4 ) 2 S x solutions, undiluted Na 2 S solutions and aqueous Na 2 S solutions.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein the heat treatment is conducted at a temperature of 500° C. to 600° C.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein the semiconductor layer formed on the surface of the facets has a band gap increasing gradually with an increase in the distance from the facets.
Claim 6
Dependent Claim
39 words
A method according to claim 1, further comprising the step of forming a reflecting film on said semiconductor layer grown on the surface of said facets in order to create a front light-emitting facet and a rear light-emitting facet.
Claim 7
Dependent Claim
29 words
A method according to claim 5, whereins aid reflecting film on said front light-=emitting facet and said rear light-emitting facet has a reflectance of approximately 10% and 75%, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-15 | 1996-06-15 | 1996-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-15 | 2000-06-15 | 2000-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-15 | 2004-06-15 | 2004-12-15 | $7700.00 | Window Closed / Lapsed |