Electronic circuit bonding interconnect component and flip chip interconnect bond

Claim 2

An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured and comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal, the component being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and conductive bonding area outermost metal surface, the conductive bonding area comprising at least two discrete metal layers, both metal layers constituting an ambient oxidizable metal.

Claim 3

An electronic circuit bonding interconnect component comprising: a conductive bonding area on a surface of a semiconductor die, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area and comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.

Claim 4

An electronic circuit bonding interconnect component comprising: a conductive bonding area on a surface of a semiconductor die, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area and comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.

Claim 5

An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond and comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.

Claim 6

An electronic circuit bonding interconnect component comprising: a semiconductor die comprising integrated circuitry fabricated therewithin; a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump being at least partially cured, the interconnect being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and bond pad outermost metal surface, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond and comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal.

Claim 7

A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive bonding area comprising at least two discrete metal layers, both metal layers constituting an ambient oxidizable metal.

Claim 8

A flip chip interconnect bond comprising: a semiconductor die comprising integrated circuitry fabricated therewithin, a conductive bonding area on the surface of the die and in electrical connection with the die integrated circuitry, the conductive bonding area comprising an outermost metal surface fabricated of an ambient oxidizable metal; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump comprising an oxide reducing agent capable of reducing oxides of the oxidizable metal, the semiconductor die being void of any appreciable ambient oxidizable metal intermediate the bonded conductive epoxy bump and conductive bonding area outermost metal surface; and a circuit substrate comprising a surface circuit trace, the circuit trace defining a bonding area, the semiconductor die being flip chip bonded to the substrate bonding area through the conductive epoxy bump, with a layer of electrically conductive epoxy being interposed between the bonding area of the circuit trace and the conductive epoxy bump, the conductive bonding area comprising at least two discrete metal layers, both metal layers constituting an ambient oxidizable metal.

Claim 9

An electronic circuit bonding interconnect component comprising: a conductive bonding area on the surface of a semiconductor die; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.

Claim 10

An electronic circuit bonding interconnect component comprising: a conductive bonding area on the surface of a semiconductor die; and an electrically conductive epoxy bump bonded to the conductive bonding area, the conductive epoxy bump covering all of the conductive bonding area and extending laterally outward therebeyond.