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US5804499A
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Prevention of abnormal WSix oxidation by in-situ amorphous silicon deposition
Assignee: Polaris Innovations Ltd
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Filing: 1996-05-03
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Granted: 1998-09-08
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Expires: 2016-05-03
Abstract
Abstract A process which prevents abnormal WSi x oxidation during subsequent LPCVD insulator deposition and gate sidewall oxidation, uses an in-situ deposition of a thin amorphous silicon layer on top of the tungsten silicide as well as the deposition of an amorphous spacer after gate stack patterning, respectively.
Inventors
- 👤 Christine Dehm
- 👤 Reinhard J. Stengl
- 👤 Hans-Joerg Timme
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01354
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
67 words
A process which prevents abnormal WSi x oxidation and provides Si by homogenous WSi x formation in the manufacturing of integrated circuit devices comprising the steps of: forming in a vacuum DCS WSi x /doped polysilicon interconnect structures for the integrated circuit devices; without breaking said vacuum, depositing an amorphous silicon layer on the interconnect structures; and, forming a native oxide on said deposited amorphous silicon layer.
Claim 2
Dependent Claim
67 words
A process which prevents abnormal WSi x oxidation and provides Si by homogenous WSi x formation in the manufacturing of integrated circuit devices comprising the steps of: forming in a vacuum DCS WSi x /doped polysilicon interconnect structures for the integrated circuit devices; without breaking said vacuum, depositing an amorphous silicon layer on the interconnect structures; and, forming a native oxide on said deposited amorphous silicon layer.
Claim 3
Dependent Claim
28 words
The process according to claim 1 further comprising the step of depositing an insulating material at temperatures between 700° and 900° C. over the native oxide/amorphous silicon layer.
Claim 4
Dependent Claim
14 words
The process according to claim 2 wherein the insulating material is a LPCVD nitride.
Claim 5
Dependent Claim
19 words
The process according claim 1 further comprising the step of depositing a LPCVD nitride over the amorphous silicon layer.
Claim 6
Dependent Claim
95 words
A process which prevents abnormal WSi x oxidation and provides Si by homogenous WSi x formation in the manufacturing of integrated circuit devices comprising the step of: growing agate oxide; depositing on said gate oxide DCS WSi x /doped polysilicon interconnect structures for the integrated circuit devices, wherein said interconnect structure serves as a gate for an electronic device; depositing an amorphous silicon layer on the interconnect structures; and depositing by CVD deposition an amorphous silicon spacer on gate sidewalls after gate stack patterning to avoid abnormal DCS WSi x oxidation during gate sidewalls oxidation.
Claim 7
Dependent Claim
95 words
A process which prevents abnormal WSi x oxidation and provides Si by homogenous WSi x formation in the manufacturing of integrated circuit devices comprising the step of: growing agate oxide; depositing on said gate oxide DCS WSi x /doped polysilicon interconnect structures for the integrated circuit devices, wherein said interconnect structure serves as a gate for an electronic device; depositing an amorphous silicon layer on the interconnect structures; and depositing by CVD deposition an amorphous silicon spacer on gate sidewalls after gate stack patterning to avoid abnormal DCS WSi x oxidation during gate sidewalls oxidation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |