Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure

Claim 2

A semiconductor device comprising: a wiring layer that includes a non-single-crystal silicon film containing a dopant for determining a conductivity type of the non-single-crystal silicon film; a titanium silicide film of a C49 and/or C54 structure as a dopant barrier layer; and a metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other, wherein the titanium silicide film comprises titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer on the non-single-crystal silicon film, forming a first interface between the non-single-crystal silicon film and the titanium silicide film, and a second interface between the metal silicide film and the titanium silicide film which are substantially free of a native oxide film.

Claim 3

The semiconductor device according to claim 1, wherein the wiring layer further includes a titanium nitride film between the titanium silicide film and the metal silicide film.

Claim 4

A dual gate CMOS semiconductor device comprising: a first gate electrode including a first non-single-crystal silicon film containing a first dopant for determining a conductivity type of the first non-single-crystal silicon film, a first titanium silicide film of a C49 and/or C54 structure, and a first metal silicide film, other than titanium silicide, all of which films are substantially laid one on another; and a second gate electrode including a second non-single-crystal silicon film containing a second dopant for determining a conductivity type of the second non-single-crystal silicon film, a second titanium silicide film of the C49 and/or C54 structure as a dopant barrier layer; and a second metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other wherein, both the first and second titanium silicide film comprise titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer on each of the first and second non-single-crystal silicon films, forming a first interface between each of the first and second non-single-crystal silicon films and the titanium silicide film, and a second interface between each of the metal silicide films and the titanium silicide film which are substantially free of a native oxide film.

Claim 5

A dual gate CMOS semiconductor device comprising: a first gate electrode including a first non-single-crystal silicon film containing a first dopant for determining a conductivity type of the first non-single-crystal silicon film, a first titanium silicide film of a C49 and/or C54 structure, and a first metal silicide film, other than titanium silicide, all of which films are substantially laid one on another; and a second gate electrode including a second non-single-crystal silicon film containing a second dopant for determining a conductivity type of the second non-single-crystal silicon film, a second titanium silicide film of the C49 and/or C54 structure as a dopant barrier layer; and a second metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other wherein, both the first and second titanium silicide film comprise titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer on each of the first and second non-single-crystal silicon films, forming a first interface between each of the first and second non-single-crystal silicon films and the titanium silicide film, and a second interface between each of the metal silicide films and the titanium silicide film which are substantially free of a native oxide film.

Claim 6

The semiconductor device according to claim 3, wherein the first gate electrode further includes a first titanium nitride film between the first titanium silicide film and the first metal silicide film, and the second gate electrode further includes a second titanium nitride film between the second titanium silicide film and the second metal silicide film.

Claim 7

The semiconductor device according to claim 1, wherein the non-single-crystal silicon film further contains nitrogen.

Claim 8

The semiconductor device according to claim 2, wherein the non-single-crystal silicon film further contains nitrogen.

Claim 9

The semiconductor device according to claim 3, wherein the non-single-crystal silicon film further contains nitrogen.

Claim 10

The semiconductor device according to claim 4, wherein the non-single-crystal silicon film further contains nitrogen.

Claim 11

The semiconductor device according to claim 2, wherein the metal silicide film, titanium nitride film and titanium silicide film have substantially the same shape in the vertical and horizontal directions.

Claim 12

The semiconductor device according to claim 4, wherein the first metal silicide film, first titanium nitride film and first titanium silicide film have essentially the same shape in the horizontal and vertical directions, and the second metal silicide film, second titanium nitride film and second titanium silicide film have essentially same shape in the vertical and horizontal directions.

Claim 13

A semiconductor device comprising source/drain region and a gate electrode formed on a gate oxide film on a substrate, the gate electrode that includes a non-single-crystal silicon film containing a dopant for determining a conductivity type of the non-single-crystal silicon film, a titanium silicide film of a C49 and/or C54 structure as a dopant barrier layer, and a metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other, wherein the titanium silicide film comprises the titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer formed on the non-single-crystal silicon film, forming a first interface between the non-single-crystal silicon film and the titanium silicide film, and a second interface between the metal silicide film and the titanium silicide film which are free from a native oxide film.

Claim 14

A semiconductor device comprising source/drain region and a gate electrode formed on a gate oxide film on a substrate, the gate electrode that includes a non-single-crystal silicon film containing a dopant for determining a conductivity type of the non-single-crystal silicon film, a titanium silicide film of a C49 and/or C54 structure as a dopant barrier layer, and a metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other, wherein the titanium silicide film comprises the titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer formed on the non-single-crystal silicon film, forming a first interface between the non-single-crystal silicon film and the titanium silicide film, and a second interface between the metal silicide film and the titanium silicide film which are free from a native oxide film.

Claim 15

The semiconductor device according to claim 11, wherein the gate electrode further includes a titanium nitride film between the titanium silicide film and the metal silicide film.