US5518958A
Expired / Lapsed
US
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Prevention of agglomeration and inversion in a semiconductor polycide process
Assignee: International Business Machines Corp
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Filing: 1994-07-29
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Granted: 1996-05-21
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Expires: 2014-07-29
Abstract
Abstract Conductors are fabricated by forming a layer of doped polysilicon on a semiconductor substrate, forming a nitrogen-enriched conductive layer on the layer of doped polysilicon, wherein nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof, and patterning the nitrogen-enriched conductive layer and layer of doped polysilicon so as to form the conductors.
Inventors
- 👤 Kenneth J. Giewont
- 👤 Anthony J. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
87 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) forming a nitrogen-enriched conductive layer on said layer of doped polysilicon, said nitrogen-enriched conductive layer including between approximately 1% and 3 atomic % of nitrogen, said nitrogen contained in said nitrogen-enriched conductive layer providing improved thermal stability thereof including inhibition of agglomeration and inversion; and (d) patterning said nitrogen-enriched conductive layer and layer of doped polysilicon to form a conductor.
Claim 2
Independent Claim
87 words
A method of fabricating a conductor, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a layer of doped polysilicon on said semiconductor substrate; (c) forming a nitrogen-enriched conductive layer on said layer of doped polysilicon, said nitrogen-enriched conductive layer including between approximately 1% and 3 atomic % of nitrogen, said nitrogen contained in said nitrogen-enriched conductive layer providing improved thermal stability thereof including inhibition of agglomeration and inversion; and (d) patterning said nitrogen-enriched conductive layer and layer of doped polysilicon to form a conductor.
Claim 3
Dependent Claim
16 words
A method according to claim 1, wherein said nitrogen-enriched conductive layer comprises a nitrogen-enriched metal silicide.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein said nitrogen-enriched conductive layer comprises a nitrogen-enriched refractory metal.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein step (c) comprises sputter depositing using a sputter process plasma.
Claim 6
Dependent Claim
25 words
A method according to claim 4, further comprising the step of incorporating nitrogen into said sputter process plasma to form a nitrogen-enriched sputter process plasma.
Claim 7
Dependent Claim
13 words
A method according to claim 4, wherein said sputter process plasma includes argon.
Claim 8
Independent Claim
109 words
A method of fabricating a gate electrode structure of a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) forming a nitrogen-enriched conductive layer on said layer of doped polysilicon, said nitrogen-enriched conductive layer including between approximately 1% and 3 atomic % of nitrogen, said nitrogen contained in said nitrogen-enriched conductive layer providing improved thermal stability thereof including inhibition of agglomeration and inversion; and (d) patterning said nitrogen-enriched conductive layer, layer of doped polysilicon and gate oxide film to form a gate electrode structure.
Claim 9
Independent Claim
109 words
A method of fabricating a gate electrode structure of a semiconductor device, comprising the steps of: (a) providing a semiconductor substrate; (b) forming a gate oxide film on said semiconductor substrate; (c) forming a layer of doped polysilicon on said gate oxide film; (d) forming a nitrogen-enriched conductive layer on said layer of doped polysilicon, said nitrogen-enriched conductive layer including between approximately 1% and 3 atomic % of nitrogen, said nitrogen contained in said nitrogen-enriched conductive layer providing improved thermal stability thereof including inhibition of agglomeration and inversion; and (d) patterning said nitrogen-enriched conductive layer, layer of doped polysilicon and gate oxide film to form a gate electrode structure.
Claim 10
Dependent Claim
16 words
A method according to claim 7, wherein said nitrogen-enriched conductive layer comprises a nitrogen-enriched metal silicide.
Claim 11
Dependent Claim
16 words
A method according to claim 7, wherein said nitrogen-enriched conductive layer comprises a nitrogen-enriched refractory metal.
Claim 12
Dependent Claim
17 words
A method according to claim 7, wherein step (d) comprises sputter depositing using a sputter process plasma.
Claim 13
Dependent Claim
25 words
A method according to claim 10, further comprising the step of incorporating nitrogen into said sputter process plasma to form a nitrogen-enriched sputter process plasma.
Claim 14
Dependent Claim
13 words
A method according to claim 10, wherein said sputter process plasma includes argon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-21 | 1999-11-20 | 2000-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-21 | 2003-11-20 | 2004-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-21 | 2007-11-20 | 2008-05-21 | $7700.00 | Window Closed / Lapsed |