Semiconductor device with antireflection film

Claim 2

A semiconductor device comprising: a semiconductor substrate having an uneven surface; a first layer made of conductive material and formed on the semiconductor substrate in a predetermined pattern; a second layer formed directly on the first layer, and having the same predetermined pattern as the first layer; and a third layer formed directly on the second layer, and having the same predetermined pattern as the first and second layers, the third layer being an antireflection film made of material different from the first and second layers, the composition and arrangement of the antireflection film being such as to lower an intensity of light incident to and reflected from the first layer, wherein the second layer has a composition different from the first and third layers, the composition and arrangement of the second layer being such as to cause relaxing of any stress generated between the first and third layer, the first layer comprising WSi, the second layer comprising amorphous silicon or polycrystalline silicon, and the third layer comprising SiNx.

Claim 3

A semiconductor device according to claim 1, wherein the second layer comprises amorphous silicon and has a film thickness of 10 nm or more.

Claim 4

A semiconductor device according to claim 1, wherein the first layer is a wiring layer or a gate electrode of the semiconductor device.

Claim 5

A semiconductor device comprising: a semiconductor substrate having an uneven surface; a first layer made of conductive material and formed on the semiconductor substrate in a predetermined pattern; a second layer formed directly on the first layer, and having the same predetermined pattern as the first layer; and a third layer formed directly on the second layer, and having the same predetermined pattern as the first and second layers, the third layer being an antireflection film made of material different from the first and second layers, the composition and arrangement of the antireflection film being such as to lower an intensity of light incident to and reflected from the first layer, wherein the second layer has a composition different from the first and third layers, the composition and arrangement of the second layer being such as to cause relaxing of any stress generated between the first and third layers, the second layer comprising a material selected from the group consisting of amorphous silicon, polycrystalline silicon, amorphous carbon, SiON, PSG, BPSG and BSG.

Claim 6

A semiconductor device comprising: a semiconductor substrate having an uneven surface; a first layer made of conductive material and formed on the semiconductor substrate in a predetermined pattern; a second layer formed directly on the first layer, and having the same predetermined pattern as the first layer; and a third layer formed directly on the second layer, and having the same predetermined pattern as the first and second layers, the third layer being an antireflection film made of material different from the first and second layers, the composition and arrangement of the antireflection film being such as to lower an intensity of light incident to and reflected from the first layer, wherein the second layer has a composition different from the first and third layers, the composition and arrangement of the second layer being such as to cause relaxing of any stress generated between the first and third layers, the second layer comprising a material selected from the group consisting of amorphous silicon, polycrystalline silicon, amorphous carbon, SiON, PSG, BPSG and BSG.