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Patent US5789321A successfully refreshed from Google Patents.
US5789321A
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Method for forming a barrier metal layer made of titanium nitride on a silicon substrate
Assignee: NEC Corp
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Filing: 1997-06-19
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Granted: 1998-08-04
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Expires: 2017-06-19
Abstract
Abstract A low pressure chloride chemical vapor deposition method for depositing a titanium nitride film within a contact hole formed in an insulation film overlying a silicon substrate is carried out by reacting a nitrogen source gas in plasma state, which contains gas molecules decomposed or excited, with a titanium source gas in non-plasma state, which contains titanium chloride undecomposed so that the titanium nitride film has a good step coverage and a low concentration of residual chlorine.
Inventors
- 👤 Yoshio Ohshita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
180 words
A method of depositing a titanium nitride film on exposed silicon in a semiconductor device comprising the steps of: heating the exposed silicon on which the titanium nitride film is to be deposited; and reacting on the heated silicon (A) a nitrogen source gas which is the primary source of reactant nitrogen for the titanium nitride film, the nitrogen source gas being in a plasma state, and (B) a titanium source gas which is the primary source of the reactant titanium for the titanium nitride film, the titanium source gas being in a non-plasma state, reacting said source gas (A) and said source gas (B) on the heated silicon in the presence of (C) a nitrogen gas in a non-plasma state which is not a source of reactant nitrogen for the titanium nitride film at a pressure of 30 Pa, and a flow rate of said gas (C) is three times a flow rate of said source gas (B), whereby the nitrogen source gas and the titanium source gas react to form the titanium nitride film on the heated silicon.
Claim 2
Independent Claim
180 words
A method of depositing a titanium nitride film on exposed silicon in a semiconductor device comprising the steps of: heating the exposed silicon on which the titanium nitride film is to be deposited; and reacting on the heated silicon (A) a nitrogen source gas which is the primary source of reactant nitrogen for the titanium nitride film, the nitrogen source gas being in a plasma state, and (B) a titanium source gas which is the primary source of the reactant titanium for the titanium nitride film, the titanium source gas being in a non-plasma state, reacting said source gas (A) and said source gas (B) on the heated silicon in the presence of (C) a nitrogen gas in a non-plasma state which is not a source of reactant nitrogen for the titanium nitride film at a pressure of 30 Pa, and a flow rate of said gas (C) is three times a flow rate of said source gas (B), whereby the nitrogen source gas and the titanium source gas react to form the titanium nitride film on the heated silicon.
Claim 3
Dependent Claim
31 words
The method of claim 1, wherein said source gas (A) comprises a gas selected from the group consisting of NH 3 , N 2 , and N 2 H 4 .
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein said source gas (B) is TiCl 4 .
Claim 5
Dependent Claim
30 words
The method of claim 1, wherein said gas (C) comprises a gas selected from the group consisting of NH 3 , N 2 , and N 2 H 4 .
Claim 6
Dependent Claim
17 words
the method of claim 4, wherein said gas (C) is the same as said source gas (A).
Claim 7
Independent Claim
244 words
A method of depositing a thin titanium nitride film with a low concentration of residual chlorine on exposed silicon substrate at a bottom of a contact hole in a semiconductor device comprising the steps of: heating the exposed silicon substrate on which the titanium nitride film is to be deposited; and introducing into a chamber containing the heated silicon substrate (A) a high reactivity, decomposed, nitrogen source gas selected from the group consisting of NH 3 , N 2 , and N 2 H 4 which is the primary source of reactant nitrogen for the titanium nitride film, the nitrogen source gas being in a plasma state, and (B) a low reactivity, undecomposed, TiCl 4 source gas which is the primary source of the reactant titanium for the titanium nitride film, the TiCl 4 source gas being in a non-plasma state, reacting said source gas (A) and said source gas (B) on the heated silicon in the presence of (C) a nitrogen gas in a non-plasma state which is not a source of reactant nitrogen for the titanium nitride film at a pressure of 30 Pa, and a flow rate of said gas (C) is three times a flow rate of said source gas (B), whereby said source gas (A) and said source gas (B) react to form a monatomic titanium nitride film on the exposed silicon at the bottom of the contact hole with a low concentration of residual chlorine in the film.
Claim 8
Independent Claim
244 words
A method of depositing a thin titanium nitride film with a low concentration of residual chlorine on exposed silicon substrate at a bottom of a contact hole in a semiconductor device comprising the steps of: heating the exposed silicon substrate on which the titanium nitride film is to be deposited; and introducing into a chamber containing the heated silicon substrate (A) a high reactivity, decomposed, nitrogen source gas selected from the group consisting of NH 3 , N 2 , and N 2 H 4 which is the primary source of reactant nitrogen for the titanium nitride film, the nitrogen source gas being in a plasma state, and (B) a low reactivity, undecomposed, TiCl 4 source gas which is the primary source of the reactant titanium for the titanium nitride film, the TiCl 4 source gas being in a non-plasma state, reacting said source gas (A) and said source gas (B) on the heated silicon in the presence of (C) a nitrogen gas in a non-plasma state which is not a source of reactant nitrogen for the titanium nitride film at a pressure of 30 Pa, and a flow rate of said gas (C) is three times a flow rate of said source gas (B), whereby said source gas (A) and said source gas (B) react to form a monatomic titanium nitride film on the exposed silicon at the bottom of the contact hole with a low concentration of residual chlorine in the film.
Claim 9
Independent Claim
15 words
The method of claims, wherein the contact hole has a diameter of about 0.5 micrometers.
Claim 10
Dependent Claim
30 words
The method of claim 6, wherein said gas (C) comprises a gas selected from the group consisting of NH 3 , N 2 , and N 2 H 4 .
Claim 11
Dependent Claim
17 words
The method of claim 8, wherein said gas (C) is the same as said source gas (A).
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
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