US5780339A
Expired / Lapsed
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Method for fabricating a semiconductor memory cell in a DRAM
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-05-02
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Granted: 1998-07-14
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Expires: 2017-05-02
Abstract
Abstract This present invention is a method of fabricating a semiconductor memory cell in a DRAM. This invention utilizes a inter plug technique and nitride sidewall spacers to improve deep node contact etching damage and reduce the number of mask steps for typical landing pad processes. Thus, the method of this invention allows the manufacture of a semiconductor memory cell that reduces the difficulties due to the high aspect ratio of the contact hole of a storage node.
Inventors
- 👤 Bin Liu
- 👤 Wen-Jya Liang
- 👤 Yeh-Sen Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
228 words
A method for fabricating a semiconductor memory cell in a DRAM, said method comprising: forming isolation regions on a substrate; forming gate electrodes on said substrate and said isolation regions; forming first spacers on the sidewalls of said gate electrodes; forming source/drain regions in the surface of said substrate; forming a first dielectric layer on said source/drain regions and said gate electrodes; patterning and etching said first dielectric layer to expose a portion of said source/drain regions to form first contact holes; forming a first conductive layer on said first dielectric layer and in said first contact holes; removing said first conductive layer over said first dielectric layer to form inter plugs; forming a second dielectric layer on said first conductive layer and said first dielectric layer; patterning and etching said third dielectric layer, said second conductive layer, and said second dielectric layer until a portion of said first conductive layer is exposed to form a pre-third contact hole; forming second spacers on the sidewalls of said pre-third contact hole to form a third contact hole; forming a third conductive layer on said third dielectric layer and in said third contact hole; patterning and etching said third conductive layer to form a storage node of a capacitor; forming a capacitor insulating film over said storage node; and forming a plate of said capacitor over said capacitor insulting film.
Claim 2
Independent Claim
228 words
A method for fabricating a semiconductor memory cell in a DRAM, said method comprising: forming isolation regions on a substrate; forming gate electrodes on said substrate and said isolation regions; forming first spacers on the sidewalls of said gate electrodes; forming source/drain regions in the surface of said substrate; forming a first dielectric layer on said source/drain regions and said gate electrodes; patterning and etching said first dielectric layer to expose a portion of said source/drain regions to form first contact holes; forming a first conductive layer on said first dielectric layer and in said first contact holes; removing said first conductive layer over said first dielectric layer to form inter plugs; forming a second dielectric layer on said first conductive layer and said first dielectric layer; patterning and etching said third dielectric layer, said second conductive layer, and said second dielectric layer until a portion of said first conductive layer is exposed to form a pre-third contact hole; forming second spacers on the sidewalls of said pre-third contact hole to form a third contact hole; forming a third conductive layer on said third dielectric layer and in said third contact hole; patterning and etching said third conductive layer to form a storage node of a capacitor; forming a capacitor insulating film over said storage node; and forming a plate of said capacitor over said capacitor insulting film.
Claim 3
Dependent Claim
19 words
The method according to claim 1, wherein said gate electrodes comprises a stack structure of polycide layer/silicon nitride layer.
Claim 4
Dependent Claim
35 words
The method according to claim 1, wherein forming said first spacers comprises: depositing a silicon nitride layer on said gate electrodes and said substrate; and etching said silicon nitride layer to form silicon nitride spacers.
Claim 5
Dependent Claim
19 words
The method according to claim 1, wherein said first dielectric layer comprises an oxide layer having about 1000˜2500 angstroms.
Claim 6
Dependent Claim
36 words
The method according to claim 1, wherein removing said first dielectric layer is a two step process comprising: a selective etching, having a selectivity ratio of about 20:1 for oxide to silicon; and an isotropic etching.
Claim 7
Dependent Claim
20 words
The method according to claim 1, wherein said first conductive layer comprises a polysilicon layer of thickness about 500˜2000 angstroms.
Claim 8
Dependent Claim
20 words
The method according to claim 1, wherein said second dielectric layer comprises an oxide layer of thickness about 1500˜3000 angstroms.
Claim 9
Dependent Claim
18 words
The method according to claim 1, wherein removing said second dielectric layer comprises using a reduced-contact etching process.
Claim 10
Dependent Claim
20 words
The method according to claim 8, wherein said second conductive layer comprises a polycide layer of thickness about 2000˜4000 angstroms.
Claim 11
Dependent Claim
20 words
The method according to claim 1, wherein said second conductive layer comprises a polycide layer of thickness about 2000˜4000 angstroms.
Claim 12
Dependent Claim
27 words
The method according to claim 1, wherein said second spacer is formed of a material selected from a group consisting of polysilicon, silicon nitride, oxide, and polymer.
Claim 13
Dependent Claim
20 words
The method according to claim 1, wherein said capacitor insulating film comprises a stack structure of oxide layer/nitride layer/oxide layer.
Claim 14
Dependent Claim
13 words
The method according to claim 1, wherein said plate is formed of polysilicon.
Claim 15
Independent Claim
235 words
A method for fabricating a semiconductor memory cell in a DRAM, said method comprising: forming isolation regions on a substrate; forming gate electrodes on said substrate and said isolation regions; forming first spacers on the sidewalls of said gate substrate; forming source/drain regions in the surface of said substrate; forming a first dielectric layer on said source/drain regions and said gate electrodes; forming first contact holes in said first dielectric layer; forming a first conductive layer on said first dielectric layer and in said first contact holes; etching said first conductive layer over said first dielectric layer to form plugs, wherein said first dielectric layer serves as an end-stop etching point; forming a second dielectric layer on said first conductive layer and said first dielectric layer; forming second contact holes in said second dielectric layer; forming a second conductive layer on said second dielectric layer and in said second contacts holes to form bitlines; forming a third dielectric layer on said second conductive layer; forming a pre-third contact hole through said third dielectric layer, said second conductive layer, and said second dielectric layer until a portion of said first conductive layer is exposed; forming second spacers on the saidwalls of said pre-third contact hole to form a third contact hole; forming a capacitor over said third dielectric layer, wherein said storage node connects a portion of said first conductive layer through said third contact hole.
Claim 16
Independent Claim
235 words
A method for fabricating a semiconductor memory cell in a DRAM, said method comprising: forming isolation regions on a substrate; forming gate electrodes on said substrate and said isolation regions; forming first spacers on the sidewalls of said gate substrate; forming source/drain regions in the surface of said substrate; forming a first dielectric layer on said source/drain regions and said gate electrodes; forming first contact holes in said first dielectric layer; forming a first conductive layer on said first dielectric layer and in said first contact holes; etching said first conductive layer over said first dielectric layer to form plugs, wherein said first dielectric layer serves as an end-stop etching point; forming a second dielectric layer on said first conductive layer and said first dielectric layer; forming second contact holes in said second dielectric layer; forming a second conductive layer on said second dielectric layer and in said second contacts holes to form bitlines; forming a third dielectric layer on said second conductive layer; forming a pre-third contact hole through said third dielectric layer, said second conductive layer, and said second dielectric layer until a portion of said first conductive layer is exposed; forming second spacers on the saidwalls of said pre-third contact hole to form a third contact hole; forming a capacitor over said third dielectric layer, wherein said storage node connects a portion of said first conductive layer through said third contact hole.
Claim 17
Dependent Claim
19 words
The method according to claim 14, wherein said gate electrodes comprises a stack structure of polycide layer/silicon nitride layer.
Claim 18
Dependent Claim
15 words
The method according to claim 14, wherein said first spacers is formed of silicon nitride.
Claim 19
Dependent Claim
37 words
The method according to claim 14, wherein said removing said first dielectric layer is a two step process comprising: a selective etching, having a selectivity ratio of about 20:1 for oxide to silicon; and an isotropic etching.
Claim 20
Dependent Claim
27 words
The method according to claim 14, wherein said second spacer is formed of a material selected from a group consisting of polysilicon, silicon nitride, oxide, and polymer.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |