US5767013A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming interconnection in semiconductor pattern device
Assignee: SK Hynix Inc
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Filing: 1997-01-03
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Granted: 1998-06-16
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Expires: 2017-01-03
Abstract
Abstract A method for forming an interconnection pattern in a semiconductor device for reducing metallic reflection, includes the steps of forming a conductive layer on a substrate, polishing the conductive layer to form a rugged surface on the conductive layer, and selectively removing the polished conductive layer to form the interconnection pattern.
Inventors
- 👤 Nae Hak Park
- 👤 Chang Soo Kim
- 👤 Yun Hee Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10P; H10P50/00; H10P50/71; H10W20/031
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
57 words
A method for forming an interconnection pattern in a semiconductor device, comprising the steps of: forming a conductive layer on a substrate; polishing the conductive layer to increase the ruggedness of a surface of the conductive layer for reducing reflection from the conductive layer; and removing portions of the polished conductive layer to form an interconnection pattern.
Claim 2
Independent Claim
57 words
A method for forming an interconnection pattern in a semiconductor device, comprising the steps of: forming a conductive layer on a substrate; polishing the conductive layer to increase the ruggedness of a surface of the conductive layer for reducing reflection from the conductive layer; and removing portions of the polished conductive layer to form an interconnection pattern.
Claim 3
Dependent Claim
21 words
A method as claimed in claim 1, wherein the substrate is formed of either a semiconductor material or an insulative material.
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1, wherein the conductive layer is formed of one selected from metals or alloys.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 1, wherein the polishing step includes the step of: performing a chemical mechanical polishing process on the surface of the conductive layer.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 3, wherein the conductor layer is formed of one selected from Al, W, Cr and Cu.
Claim 7
Dependent Claim
27 words
A method as claimed in claim 1, wherein the polishing step includes the step of: performing a mechanical polishing process on the surface of the conductive layer.
Claim 8
Dependent Claim
19 words
A method as claimed in claim 1, wherein a thickness of the polished conductive layer is about 100˜500 Å.
Claim 9
Dependent Claim
24 words
A method as claimed in claim 1, further comprising of the step of: forming an insulating film between the substrate and the conductive layer.
Claim 10
Dependent Claim
74 words
A method as claimed in claim 1, wherein the step of removing portions of the conductive layer includes the steps of: forming a photoresist layer on the polished conductive layer, exposing and developing the photoresist layer to form a photoresist pattern on the polished conductive layer, and removing the portions of the polished conductive layer using the photoresist pattern as a mask to expose portions of the substrate and to form the interconnection pattern.
Claim 11
Dependent Claim
45 words
A method as claimed in claim 1, further comprising the step of: forming a planarizing insulating layer directly on the rugged surface of the polished conductive layer and on the substrate, so as to fill gaps of the interconnection pattern with the planarizing insulating layer.
Claim 12
Dependent Claim
34 words
A method as claimed in claim 4, wherein the chemical mechanical polishing process includes use of a polishing liquid composed of Al 2 O 3 particles+(HF or HCl)+H 2 O 2 +H 2 O.
Claim 13
Dependent Claim
19 words
A method as claimed in claim 11, wherein a thickness of the polished conductive layer is about 100˜500 Å.
Claim 14
Dependent Claim
27 words
A method as claimed in claim 6, wherein the mechanical polishing process includes use of a polishing liquid composed of Al 2 O 3 particles+H 2 O.
Claim 15
Dependent Claim
19 words
A method as claimed in claim 13, wherein a thickness of the polished conductive layer is about 100˜500 Å.
Claim 16
Dependent Claim
18 words
A method as claimed in claim 1, wherein the conductive layer formed on the substrate includes a step.
Claim 17
Dependent Claim
72 words
A method as claimed in claim 1, wherein the polishing includes the step of: forming a rugged top surface on the conductive layer; and wherein the removing step includes the steps of: forming a photoresist layer directly over the entire rugged top surface of the conductive layer, patterning the photoresist layer to form a photoresist pattern, and removing the portions of the polished conductive layer using the photoresist pattern as a mask.
Claim 18
Dependent Claim
46 words
A method as claimed in claim 16, further comprising the step of: forming a planarizing insulating layer directly on the rugged top surface of the polished conductive layer and on the substrate so that gaps of the interconnection pattern are filled with the planarizing insulating layer.
Claim 19
Dependent Claim
32 words
A method as claimed in claim 1, wherein the polishing step includes use of a polishing liquid composed of Al 2 O 3 particles+(HF or HCl)+H 2 O 2 +H 2 O.
Claim 20
Dependent Claim
21 words
A method as claimed in claim 18, wherein the size of the Al 2 O 3 particles is about 200˜1000 Å.
Claim 21
Dependent Claim
26 words
A method as claimed in claim 1, wherein the polishing step includes use of a polishing liquid composed of Al 2 O 3 particles+H 2 O.
Claim 22
Dependent Claim
33 words
A method as claimed in claim 1, wherein the forming step includes the step of: depositing a conductive material directly on a substantially flat substrate, so that the conductive layer is substantially flat.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |