US5607718A
Expired / Lapsed
US
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Polishing method and polishing apparatus
Assignee: Toshiba Corp
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Filing: 1994-09-02
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Granted: 1997-03-04
•
Expires: 2014-09-02
Abstract
Abstract This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
Inventors
- 👤 Yasutaka Sasaki
- 👤 Mie Matsuo
- 👤 Rempei Nakata
- 👤 Junichi Wada
- 👤 Nobuo Hayasaka
- 👤 Hiroyuki Yano
- 👤 Haruo Okano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:18
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/005; B24B37/015; B24B57/00; B24B57/02; H; H10; H10P; H10P50/00; H10P52/00; H10P52/40; H10P52/403; H10P70/00; H10P70/20; H10P70/27; H10P70/277; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
157 words
A polishing method comprising the steps of: forming a metal film to be polished on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said metal film to be polished in said recessed portion by subjecting said metal film to chemical mechanical polishing using a polishing pad and a polishing agent; wherein said polishing agent contains a solution for etching said metal film to be polished, a corrosion inhibitor of said metal film to be polished, and polishing particles; and said chemical mechanical polishing is performed while discouraging dissolution of that portion of the metal film which is not affected by mechanical action of said polishing pad, with said corrosion inhibitor, wherein said solution has a pH of not less than 7.0, and a polishing velocity of said metal film is greater than a polishing velocity of said substrate during said chemical mechanical polishing.
Claim 2
Dependent Claim
157 words
A polishing method comprising the steps of: forming a metal film to be polished on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said metal film to be polished in said recessed portion by subjecting said metal film to chemical mechanical polishing using a polishing pad and a polishing agent; wherein said polishing agent contains a solution for etching said metal film to be polished, a corrosion inhibitor of said metal film to be polished, and polishing particles; and said chemical mechanical polishing is performed while discouraging dissolution of that portion of the metal film which is not affected by mechanical action of said polishing pad, with said corrosion inhibitor, wherein said solution has a pH of not less than 7.0, and a polishing velocity of said metal film is greater than a polishing velocity of said substrate during said chemical mechanical polishing.
Claim 3
Dependent Claim
28 words
A method according to claim 1, wherein said metal film to be polished contains at least one element selected from the group consisting of Al, Cu and Ag.
Claim 4
Dependent Claim
29 words
A method according to claim 1, wherein said metal film to be polished is a film containing Al, and said solution has a pH of not less than 7.5.
Claim 5
Dependent Claim
23 words
A method according to claim 1, wherein said polishing particles contain silica particles having a particle size of not more than 100 nm.
Claim 6
Dependent Claim
28 words
A method according to claim 1, wherein said solution contains at least one member selected from the group consisting of ammonia, an amine, sodium hydroxide and potassium hydroxide.
Claim 7
Dependent Claim
26 words
A method according to claim 1, wherein said corrosion inhibitor contains at least one member selected from the group consisting of a silicate and a chromate.
Claim 8
Dependent Claim
22 words
A method according to claim 1, wherein said corrosion inhibitor is formed by reacting said solution for etching with said polishing particles.
Claim 9
Dependent Claim
25 words
A method according to claim 1, wherein said polishing particles contain silica particles, and said corrosion inhibitor contains silicate ions and silica particles negatively charged.
Claim 10
Dependent Claim
22 words
A method according to claim 1, wherein said polishing agent has a temperature of not more than 15° C. during said polishing.
Claim 11
Dependent Claim
137 words
A polishing method comprising the steps of: forming an aluminum film to be polished on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said aluminum film to be polished in said recessed portion by subjecting said aluminum film to chemical mechanical polishing using a polishing pad and a polishing agent; wherein said polishing agent contains a solution for etching said aluminum film to be polished, a corrosion inhibitor of said aluminum film to be polished, and polishing particles; said solution for etching contains an amine; said polishing particles contain silica particles; and said chemical mechanical polishing is performed while discouraging dissolution of that portion of the metal film which is not affected by mechanical action of said polishing pad, with said corrosion inhibitor.
Claim 12
Dependent Claim
137 words
A polishing method comprising the steps of: forming an aluminum film to be polished on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said aluminum film to be polished in said recessed portion by subjecting said aluminum film to chemical mechanical polishing using a polishing pad and a polishing agent; wherein said polishing agent contains a solution for etching said aluminum film to be polished, a corrosion inhibitor of said aluminum film to be polished, and polishing particles; said solution for etching contains an amine; said polishing particles contain silica particles; and said chemical mechanical polishing is performed while discouraging dissolution of that portion of the metal film which is not affected by mechanical action of said polishing pad, with said corrosion inhibitor.
Claim 13
Dependent Claim
17 words
A method according to claim 10, wherein said solution has a pH of not less than 7.5.
Claim 14
Dependent Claim
20 words
A method according to claim 10, wherein said silica particles have a particle size of not more than 100 nm.
Claim 15
Dependent Claim
26 words
A method according to claim 10, wherein said corrosion inhibitor contains at least one material selected from the group consisting of a silicate and a chromate.
Claim 16
Dependent Claim
22 words
A method according to claim 10, wherein said corrosion inhibitor is formed by reacting said solution for etching with said silica particles.
Claim 17
Dependent Claim
18 words
A method according to claim 10, wherein said corrosion inhibitor contains silicate ions and silica particles negatively charged.
Claim 18
Dependent Claim
22 words
A method according to claim 10, wherein said polishing agent has a temperature of not more than 15° C. during said polishing.
Claim 19
Dependent Claim
160 words
A polishing method comprising the steps of: forming a metal film to be polished, said metal film containing Al, on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said metal film to be polished in said recessed portion by subjecting said metal film to chemical mechanical polishing using a polishing agent; wherein said polishing agent contains a solution for etching said film to be polished, a corrosion inhibitor of said film to be polished, and polishing particles; and said polishing agent has a ratio V P /V E of a polishing velocity, V P , of said metal film, to a dissolution velocity, V E , of said metal film, of not less than 90, wherein said solution has a pH of not less than 7.0, and a polishing velocity of Al is greater than a polishing velocity of said substrate during said chemical mechanical polishing.
Claim 20
Dependent Claim
160 words
A polishing method comprising the steps of: forming a metal film to be polished, said metal film containing Al, on a substrate having a recessed portion in a surface thereof so as to fill at least said recessed portion; and selectively embedding said metal film to be polished in said recessed portion by subjecting said metal film to chemical mechanical polishing using a polishing agent; wherein said polishing agent contains a solution for etching said film to be polished, a corrosion inhibitor of said film to be polished, and polishing particles; and said polishing agent has a ratio V P /V E of a polishing velocity, V P , of said metal film, to a dissolution velocity, V E , of said metal film, of not less than 90, wherein said solution has a pH of not less than 7.0, and a polishing velocity of Al is greater than a polishing velocity of said substrate during said chemical mechanical polishing.
Claim 21
Dependent Claim
27 words
A method according to claim 17, wherein said film to be polished further contains at least one element selected from the group consisting of Cu and Ag.
Claim 22
Dependent Claim
28 words
A method according to claim 17, wherein said film to be polished is a film containing Al, and said solution has a pH of not less than 7.5.
Claim 23
Dependent Claim
23 words
A method according to claim 17, wherein said polishing particles contain silica particles having a particle size of not more than 100 nm.
Claim 24
Dependent Claim
28 words
A method according to claim 17, wherein said solution contains at least one member selected from the group consisting of ammonia, an amine, sodium hydroxide and potassium hydroxide.
Claim 25
Dependent Claim
26 words
A method according to claim 17, wherein said corrosion inhibitor contains at least one member selected from the group consisting of a silicate and a chromate.
Claim 26
Dependent Claim
22 words
A method according to claim 17, wherein said corrosion inhibitor is formed by reacting said solution for etching with said silica particles.
Claim 27
Dependent Claim
25 words
A method according to claim 17, wherein said polishing particles contain silica particles, and said corrosion inhibitor contains silicate ions and silica particles negatively charged.
Claim 28
Dependent Claim
22 words
A method according to claim 17, wherein said polishing agent has a temperature of not more than 15° C. during said polishing.
Claim 29
Dependent Claim
26 words
A method according to claim 1, wherein said solution contains at least one member selected from the group consisting of triethylamine, choline, TMAH, piperazine and ammonia.
Claim 30
Dependent Claim
22 words
A method according to claim 1, wherein after said polishing said metal film has a R max of 20 nm or less.
Claim 31
Dependent Claim
25 words
A method according to claim 1, further comprising the step of forming a polishing-resistant film between said metal film and said substrate prior to polishing.
Claim 32
Dependent Claim
28 words
A method according to claim 28, wherein said polish-resistant film consists of a material selected from group consisting of carbon, TiN, ZrN, HfN, TaN, VN, NbN and TiW.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-03 | 2000-09-02 | 2001-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-03 | 2004-09-02 | 2005-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-03 | 2008-09-02 | 2009-03-04 | $7700.00 | Window Closed / Lapsed |