US5763932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Isolation regions and methods of forming isolation regions
Assignee: Round Rock Research LLC
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Filing: 1997-03-18
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Granted: 1998-06-09
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Expires: 2017-03-18
Abstract
Abstract A silicon-comprising layer is employed adjacent a trench during planarization of an oxide fill within the trench. An overhanging oxide sidewall is formed along a lateral edge of a trenched isolation region, the overhanging oxide sidewall overlapping an upper surface of a substrate immediately adjacent the trenched isolation region. An oxide plug is formed comprising a recessed portion below a substrate upper surface and an elevated portion above the substrate upper surface. The elevated portion comprising a ledge which extends over the substrate upper surface and has a top surface and a substantially vertical lateral edge side surface. Further, the plug may be within a substrate, the oxide plug having a recessed portion below a substrate upper surface and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge extending over the substrate upper surface and abutting a polysilicon layer.
Inventors
- 👤 Pai-Hung Pan
- 👤 Karl M. Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:56
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
62 words
An oxide plug in a silicon wafer substrate, the substrate having an upper surface, the plug comprising: a recessed portion elevationally below the substrate upper surface; and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge which extends over the substrate upper surface, the ledge comprising a top surface and a substantially vertical lateral edge side surface.
Claim 2
Dependent Claim
62 words
An oxide plug in a silicon wafer substrate, the substrate having an upper surface, the plug comprising: a recessed portion elevationally below the substrate upper surface; and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge which extends over the substrate upper surface, the ledge comprising a top surface and a substantially vertical lateral edge side surface.
Claim 3
Dependent Claim
95 words
An oxide plug assembly in and above a silicon-comprising substrate upper surface, the assembly comprising: a polysilicon layer over the silicon-comprising substrate upper surface, the polysilicon layer having a lateral edge side surface; and an oxide plug comprising: a recessed portion elevationally below the substrate upper surface; and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge extending over and along the substrate upper surface, the ledge comprising a lateral edge side surface, the oxide plug lateral edge side surface abutting the lateral edge side surface of the polysilicon layer.
Claim 4
Dependent Claim
95 words
An oxide plug assembly in and above a silicon-comprising substrate upper surface, the assembly comprising: a polysilicon layer over the silicon-comprising substrate upper surface, the polysilicon layer having a lateral edge side surface; and an oxide plug comprising: a recessed portion elevationally below the substrate upper surface; and an elevated portion above the substrate upper surface, the elevated portion comprising a ledge extending over and along the substrate upper surface, the ledge comprising a lateral edge side surface, the oxide plug lateral edge side surface abutting the lateral edge side surface of the polysilicon layer.
Claim 5
Dependent Claim
146 words
A recessed trench isolation assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap having a lateral edge side surface which is on the upper surface of the substrate; and a polysilicon layer over the substrate, the polysilicon layer having a lateral edge side surface, the lateral edge side surface of the oxide cap abutting the lateral edge side surface of the polysilicon layer.
Claim 6
Dependent Claim
146 words
A recessed trench isolation assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap having a lateral edge side surface which is on the upper surface of the substrate; and a polysilicon layer over the substrate, the polysilicon layer having a lateral edge side surface, the lateral edge side surface of the oxide cap abutting the lateral edge side surface of the polysilicon layer.
Claim 7
Dependent Claim
116 words
A recessed trench isolation assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate the oxide cap being a truncated oxide cap; and a polysilicon layer over the substrate and in abutment with the truncated oxide cap.
Claim 8
Dependent Claim
116 words
A recessed trench isolation assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate the oxide cap being a truncated oxide cap; and a polysilicon layer over the substrate and in abutment with the truncated oxide cap.
Claim 9
Dependent Claim
158 words
A recessed trench isolation oxide assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap having a lateral edge side surface which is on the upper surface of the substrate; an oxide-comprising pad layer over the substrate; and a doped polysilicon layer over the oxide pad layer, the polysilicon layer having a lateral edge side surface, the lateral edge side surface of the oxide cap abutting the is lateral edge side surface of the polysilicon layer.
Claim 10
Dependent Claim
158 words
A recessed trench isolation oxide assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap having a lateral edge side surface which is on the upper surface of the substrate; an oxide-comprising pad layer over the substrate; and a doped polysilicon layer over the oxide pad layer, the polysilicon layer having a lateral edge side surface, the lateral edge side surface of the oxide cap abutting the is lateral edge side surface of the polysilicon layer.
Claim 11
Dependent Claim
126 words
A recessed trench isolation oxide assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap being a truncated oxide cap; an oxide-comprising pad layer over the substrate; and a doped polysilicon layer over the oxide pad layer and in abutment with the oxide cap.
Claim 12
Dependent Claim
126 words
A recessed trench isolation oxide assembly comprising: a recessed trench isolation oxide assembly within a semiconductor substrate, the trench isolation oxide assembly comprising a recessed isolation oxide having an upper edge, the upper edge being defined as an upper terminus of the recessed isolation oxide elevationally substantially coextensive with an adjacent upper surface of the semiconductor substrate; the recessed trench isolation oxide assembly comprising an oxide cap over the recessed isolation oxide, the oxide cap extending over the upper edge of the recessed isolation oxide and overlapping the adjacent upper surface of the substrate, the oxide cap being a truncated oxide cap; an oxide-comprising pad layer over the substrate; and a doped polysilicon layer over the oxide pad layer and in abutment with the oxide cap.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-08 | 2001-12-08 | 2002-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-08 | 2009-12-08 | 2010-06-09 | $7700.00 | Window Closed / Lapsed |