Patent US3456657A successfully refreshed from Google Patents.
Patent US5760462A successfully refreshed from Google Patents.
US5760462A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal, passivating layer, semiconductor, field-effect transistor
Assignee: National Aeronautics and Space Administration
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Filing: 1997-03-19
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Granted: 1998-06-02
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Expires: 2017-03-19
Abstract
Abstract A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
Inventors
- 👤 Andrew R. Barron
- 👤 Phillip P. Jenkins
- 👤 Andrew N. MacInnes
- 👤 Aloysius F. Hepp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D30/00; H10D30/80; H10D30/801; H10D62/00; H10D62/80; H10D64/64; H10W; H10W42/00; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
41 words
A majority carrier device, comprising: (a) an electrically active region; and (b) a thin-film passivating layer of greater than monolayer thickness in contact with said active region, said thin-film passivating layer consisting essentially of a Group 13 element and a tellurium.
Claim 2
Dependent Claim
41 words
A majority carrier device, comprising: (a) an electrically active region; and (b) a thin-film passivating layer of greater than monolayer thickness in contact with said active region, said thin-film passivating layer consisting essentially of a Group 13 element and a tellurium.
Claim 3
Dependent Claim
87 words
A metal passivating layer semi-conductor field effect transistor comprising: (a) an active layer; (b) a thin-film passivating layer of greater than monolayer thickness in contact with the active layer, said thin-film passivating layer consisting essentially of a Group 13 element and a chalcogenide component; (c) a source contact on the active layer or on the passivating layer; (d) a drain contact on the active layer or on the passivating layer; (e) a gate contact on the passivating layer and between the source contact and the drain contact.
Claim 4
Dependent Claim
87 words
A metal passivating layer semi-conductor field effect transistor comprising: (a) an active layer; (b) a thin-film passivating layer of greater than monolayer thickness in contact with the active layer, said thin-film passivating layer consisting essentially of a Group 13 element and a chalcogenide component; (c) a source contact on the active layer or on the passivating layer; (d) a drain contact on the active layer or on the passivating layer; (e) a gate contact on the passivating layer and between the source contact and the drain contact.
Claim 5
Dependent Claim
15 words
The transistor of claim 2, wherein the active layer includes at least one doping agent.
Claim 6
Dependent Claim
16 words
The transistor of claim 3, wherein the doping agent is distributed asymmetrically within the active layer.
Claim 7
Dependent Claim
22 words
The transistor of claim 4 wherein the doping agent is element select from Group 13 or Group 15 of the Periodic Table.
Claim 8
Dependent Claim
12 words
The transistor of claim 2, wherein the active layer is a semi-conductor.
Claim 9
Dependent Claim
12 words
The transistor of claim 2, wherein the active layer includes gallium arsenide.
Claim 10
Dependent Claim
11 words
The transistor of claim 2, wherein the active layer includes silicon.
Claim 11
Dependent Claim
12 words
The transistor of claim 2, wherein the active layer includes indium phosphide.
Claim 12
Dependent Claim
12 words
The transistor of claim 2, wherein the active layer includes zinc selenide.
Claim 13
Dependent Claim
14 words
The transistor of claim 2, wherein said transistor includes a Schottky barrier gate contact.
Claim 14
Dependent Claim
14 words
The transistor of claim 2, wherein at least one of the contacts includes gold.
Claim 15
Dependent Claim
16 words
The transistor of claim 12, wherein at least one of the contacts includes a gold-based alloy.
Claim 16
Dependent Claim
15 words
The transistor of claim 2, wherein at least one of the contacts includes tungsten silicide.
Claim 17
Dependent Claim
13 words
The transistor of claim 2, wherein the passivating layer is an insulating layer.
Claim 18
Dependent Claim
13 words
The transistor of claim 2, wherein the passivating layer is a buffer layer.
Claim 19
Dependent Claim
14 words
The transistor of claim 2 further including a buffer layer at the active layer.
Claim 20
Dependent Claim
16 words
The transistor of claim 2, wherein the chalcogenide component of the thin-film passivating layer includes sulfur.
Claim 21
Dependent Claim
16 words
The transistor of claim 2, wherein the chalcogenide component of the thin-film passivating layer includes selenium.
Claim 22
Dependent Claim
16 words
The transistor of claim 2, wherein the chalcogenide component of the thin-film passivating layer includes tellurium.
Claim 23
Dependent Claim
20 words
The transistor of claim 2, wherein the electrically active region includes a p-type doped region and a n-type doped region.
Claim 24
Dependent Claim
25 words
The transistor of claim 2, wherein the portions of the electrically active layer proximate to the source and drain contacts are of opposite conductivity types.
Claim 25
Dependent Claim
26 words
The transistor of claim 2, wherein current can flow between the source and drain contacts in the absence of an applied voltage across the gate contact.
Claim 26
Dependent Claim
26 words
The transistor of claim 2, wherein current cannot flow between the source and drain contacts in the absence of an applied voltage across the gate contact.
Claim 27
Dependent Claim
22 words
The transistor of claim 2, wherein the thin film passivating layer is an isolation layer between the gate, source and drain contacts.
Claim 28
Dependent Claim
66 words
A Schottky barrier device, comprising: a) an electrically active layer; b) a thin-film passivating layer of greater than monolayer thickness in contact with the active layer, said thin film passivating layer consisting essentially of a Group 13 element and a chalcogenide component; c) an electrical contact on the active layer or on the passivating layer; and d) a Schottky barrier gate contact on the passivating layer.
Claim 29
Dependent Claim
66 words
A Schottky barrier device, comprising: a) an electrically active layer; b) a thin-film passivating layer of greater than monolayer thickness in contact with the active layer, said thin film passivating layer consisting essentially of a Group 13 element and a chalcogenide component; c) an electrical contact on the active layer or on the passivating layer; and d) a Schottky barrier gate contact on the passivating layer.
Claim 30
Dependent Claim
13 words
The transistor of claim 17 wherein the buffer layer is disposed a substrate.
Claim 31
Dependent Claim
11 words
The transistor of claim 27, wherein the substrate includes gallium arsenide.
Claim 32
Dependent Claim
10 words
The transistor of claim 27 wherein the substrate includes quartz.
Claim 33
Dependent Claim
10 words
The transistor of claim 27 wherein the substrate includes diamond.
Claim 34
Dependent Claim
10 words
The transistor of claim 27 wherein the substrate includes sapphire.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |