US4354198A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Zinc-sulphide capping layer for gallium-arsenide device
Assignee: International Business Machines Corp
•
Filing: 1980-05-30
•
Granted: 1982-10-12
•
Expires: 2000-05-30
Abstract
Abstract The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
Inventors
- 👤 Rodney T. Hodgson
- 👤 George D. Pettit
- 👤 Thomas O. Sedgwick
- 👤 Jerry M. Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:42
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P; H10P34/00; H10P34/40; H10P34/42; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
53 words
A semiconductor device body of a group III-V semiconductor having at least one surface with a first lattice structure, and a group II-VI semiconductor having a second lattice structure different from said first lattice structure in an annealed condition on said at least one surface functioning as a passivating layer for said body.
Claim 2
Dependent Claim
53 words
A semiconductor device body of a group III-V semiconductor having at least one surface with a first lattice structure, and a group II-VI semiconductor having a second lattice structure different from said first lattice structure in an annealed condition on said at least one surface functioning as a passivating layer for said body.
Claim 3
Dependent Claim
22 words
A semiconductor device body as set forth in claim 1 wherein said III-V semiconductor in GaAs and said II-VI semiconductor is ZnS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-11 | 1986-04-12 | 1986-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-11 | 1990-04-12 | 1990-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-11 | 1994-04-12 | 1994-10-12 | $7700.00 | Window Closed / Lapsed |