Circuit with monolitically integrated p-i-n/Schottky diode arrangement

Claim 2

A monolithically integrated circuit for carrying out different mixer and switch functions, comprising: at least one switch element comprising a p-i-n diode and at least one mixer element comprising a Schottky diode monolithically integrated in the circuit, wherein the p-i-n diode and Schottky diode are made from a common semiconductor layer sequence, the semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers, and wherein the p-contact layer and the insulating layer are comprised of InGaAs, the n-contact layer is comprised of InGaAs and the integrated circuit further comprises an InP substrate on which the layers are applied.

Claim 3

The monolithically integrated circuit according to claim 1, wherein the etch arresting layer is at a defined distance d from the n-contact layer.

Claim 4

A monolithically integrated circuit according to claim 1, wherein the p-i-n and Schottky diodes are arranged in a mesa construction.

Claim 5

A monolithically integrated circuit according to claim 1, wherein the n-contact layer has a layer thickness of less than 1 μm and a doping concentration N D exceeding 10 18 cm -3 , the p-contact layer has a layer thickness of approximately 100 nm and a doping concentration N A exceeding 10 19 cm -3 , and the insulating layer has a layer thickness of less than 2 μm and a doping concentration N D which is smaller than 10 17 cm -3 .

Claim 6

A monolithically integrated circuit for carrying out different mixer and switch functions, comprising: at least one switch element comprising a p-i-n diode and at least one mixer element comprising a Schottky diode monolithically integrated in the circuit, wherein the p-i-n diode and Schottky diode are made from a common semiconductor layer sequence, the semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers, and wherein the contact layers and the insulating layer are comprised of GaAs; and the integrated circuit further comprises a GaAs substrate on which the semiconductor layer sequence is applied and the n-contact layer has a layer thickness of less than 1 μm and a doping concentration N D exceeding 10 18 cm -3 , the p-contact layer has a layer thickness of approximately 100 nm and a doping concentration N A exceeding 10 19 cm -3 , and the insulating layer has a layer thickness of less than 2 μm and a doping concentration N D which is smaller than 10 17 cm -3 .

Claim 7

A monolithically integrated circuit for carrying out different mixer and switch functions, comprising: at least one switch element comprising a p-i-n diode and at least one mixer element comprising a Schottky diode monolithically integrated in the circuit, wherein the p-i-n diode and Schottky diode are made from a common semiconductor layer sequence, the semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers, and wherein the contact layers and the insulating layer are comprised of GaAs; and the integrated circuit further comprises a GaAs substrate on which the semiconductor layer sequence is applied and the n-contact layer has a layer thickness of less than 1 μm and a doping concentration N D exceeding 10 18 cm -3 , the p-contact layer has a layer thickness of approximately 100 nm and a doping concentration N A exceeding 10 19 cm -3 , and the insulating layer has a layer thickness of less than 2 μm and a doping concentration N D which is smaller than 10 17 cm -3 .

Claim 8

A monolithically integrated circuit for carrying out different mixer and switch functions, comprising: at least one switch element comprising a p-i-n diode and at least one mixer element comprising a Schottky diode monolithically integrated in the circuit, wherein the i-i-n diode and Schottky diode are made from a common semiconductor layer sequence, the semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers, and wherein the etch arresting layer is located in the insulating layer at a distance d of less than 100 nm from the n-contact layer, and the layer thickness of the etch arresting layer is in a range from 2 to 5 nm.

Claim 9

A monolithically integrated circuit for carrying out different mixer and switch functions, comprising: at least one switch element comprising a p-i-n diode and at least one mixer element comprising a Schottky diode monolithically integrated in the circuit, wherein the i-i-n diode and Schottky diode are made from a common semiconductor layer sequence, the semiconductor layer sequence respectively includes: highly doped p-contact and n-contact layers, and a lightly doped insulating layer grown between the contact layers and which includes an etch arresting layer at a defined distance d from one of the contact layers, and wherein the etch arresting layer is located in the insulating layer at a distance d of less than 100 nm from the n-contact layer, and the layer thickness of the etch arresting layer is in a range from 2 to 5 nm.