US3586929A
Expired / Lapsed
US
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Semiconductor device having two varicap diodes arranged back to back
Assignee: US Philips Corp
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Filing: 1969-03-27
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Granted: 1971-06-22
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Expires: 1989-03-27
Abstract
Abstract Two varicap diodes are integrated into a common semiconductor body by preferably epitaxial techniques. The structure comprises a middle region of high conductivity flanked on two sides by opposite type regions of lower conductivity, in turn flanked by contact regions of high conductivity. Connections are made to the middle region and the contact regions.
Inventors
- 👤 Jurgen Burmeister
- 👤 Gerd Anton Schiefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:32
CPC Classifications
H; H10; H10D; H10D99/00; H10D84/00; H10D84/60; H10D84/645; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/145
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
37 words
A semiconductor device as set forth in claim 1 and including means for applying to the connections to the first, second and third regions bias voltage such as to bias both PN junctions in the reverse direction.
Claim 2
Dependent Claim
19 words
A semiconductor device as set forth in claim 2 wherein the PN junctions are located in substantially parallel planes.
Claim 3
Dependent Claim
29 words
A semiconductOr device as set forth in claim 2 wherein the second region is p-type, and the first and third regions are n-type and of substantially the same conductivity.
Claim 4
Dependent Claim
24 words
A semiconductor device as set forth in claim 2 wherein the semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.
Claim 5
Dependent Claim
21 words
A semiconductor device as set forth in claim 2 wherein the second region is thicker than the first and third regions.
Claim 6
Dependent Claim
55 words
A semiconductor device as set forth in claim 2 wherein the connection to the first region comprises a fourth region of opposite type material and the connection to the second region comprises a fifth region of opposite type material, both the fourth and fifth regions having a higher conductivity than the first and third regions.
Claim 7
Dependent Claim
38 words
A semiconductor device as set forth in claim 7 wherein the semiconductor body comprises the fourth region as a substrate, and the first, second, third, and fifth regions as successively arranged grown epitaxial layers on the fourth region.
Claim 8
Dependent Claim
55 words
A semiconductor device as set forth in claim 7 wherein the semiconductor body comprises the second region as a substrate, the first and third regions as parts of a first grown epitaxial layer on the second region, and the fourth and fifth regions as parts of a second grown epitaxial layer in the first layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |