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Method of sputter deposition simulation by inverse trajectory calculation

Assignee: NEC Electronics Corp
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Filing: 1996-03-25
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Granted: 1998-05-12
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Expires: 2016-03-25
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Abstract

Abstract In a profile simulation of a thin film deposited on a substrate by sputtering, inverse trajectories from an area concerned of the substrate to a target are calculated by Monte Carlo method in order to reduce time required for the profile simulation. With trajectories arriving to the target and their generation probabilities, the profile simulation is performed applying a string model.

Inventors

  • 👤 Toshiyuki Ohta

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 08:25
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; G; G06; G06F; G06F30/00; G06F30/20; G06F30/23

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 135 words
A method of profile simulation of a thin film deposited by sputtering, comprising the steps of: determining trajectories of sputtered particles generated according to a generation probability of each of said sputtered particles from a target by a Monte Carlo method which considers equipmental geometry where said trajectories are traced and sputtered particle collisions with background gas, and determining growth of the thin film at a location according to a proportional number of said trajectories of sputtered particles arriving at said location; and determining said trajectories arriving at said location by an inverse calculation which considers that each of said trajectories arriving at said location follows one of said trajectories of virtual particles starting from said location and extending to said target assuming said virtual particles travel in the same manner as said sputtered particles.
Claim 2
Independent Claim 135 words
A method of profile simulation of a thin film deposited by sputtering, comprising the steps of: determining trajectories of sputtered particles generated according to a generation probability of each of said sputtered particles from a target by a Monte Carlo method which considers equipmental geometry where said trajectories are traced and sputtered particle collisions with background gas, and determining growth of the thin film at a location according to a proportional number of said trajectories of sputtered particles arriving at said location; and determining said trajectories arriving at said location by an inverse calculation which considers that each of said trajectories arriving at said location follows one of said trajectories of virtual particles starting from said location and extending to said target assuming said virtual particles travel in the same manner as said sputtered particles.
Claim 3
Dependent Claim 64 words
The method of profile simulation according to claim 1; wherein said generation probability is calculated from an experimental erosion distribution of said target, a distribution of length of a path ejected from said target by inverse calculation of each of said trajectories arriving at said location, and a distribution of ejecting angle from said target of each of said trajectories arriving at said location.
Claim 4
Dependent Claim 70 words
The method of profile simulation according to claim 1; wherein said generation probability is calculated from an experimental erosion distribution of said target, a distribution of length of a path ejected from said target with an ejecting angle generated according to an ejecting angle distribution for replacing a path ejected from said target by inverse calculation of each of said trajectories arriving at said location, and said ejecting angle distribution.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-05-11 2001-11-10 2002-05-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-05-11 2005-11-10 2006-05-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-05-11 2009-11-10 2010-05-12 $7700.00 Window Closed / Lapsed

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