US5227364A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming patterned oxide superconducting films and Josephson junction devices by using an aqueous alkaline solution
Assignee: Sanyo Electric Co Ltd
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Filing: 1991-06-27
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Granted: 1993-07-13
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Expires: 2011-06-27
Abstract
Abstract A method of forming a fine groove on a superconducting thin film. A superconducting oxide thin film is formed on a MgO substrate, and a damaged layer is formed thereon by irradiating the superconducting thin film with focused ion beams to such a degree that not sputter is generated and the crystalline structure of the superconducting thin film is disturbed. The damaged layer is then removed by treatment with a strong alkali such as KOH. Thus, a fine groove is effectively formed. By inserting an oxide layer between the substrate and the superconducting thin film, a Josephson junction device suitable for superconducting transistors is produced.
Inventors
- 👤 Shuji Fujiwara
- 👤 Ryokan Yuasa
- 👤 Masao Nakao
- 👤 Masaaki Nemoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/087; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0912; H10N60/0941; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/725; Y10S505/728
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
37 words
A method of processing an oxide superconducting film comprising the steps of: forming a damaged layer by irradiating said oxide superconducting film with ion beams; and removing the damaged layer by treatment with an aqueous alkaline solution.
Claim 2
Independent Claim
37 words
A method of processing an oxide superconducting film comprising the steps of: forming a damaged layer by irradiating said oxide superconducting film with ion beams; and removing the damaged layer by treatment with an aqueous alkaline solution.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein the ion beams used at the step of forming the damaged layer are focused ion beams generated by a focused ion beam method.
Claim 4
Dependent Claim
21 words
A method according to claim 2, wherein the superconducting film contains bismuth and the ion beams are Si ++ ion beams.
Claim 5
Dependent Claim
20 words
A method according to claim 2, wherein the superconducting film contains bismuth and the ion beams are Au ion beams.
Claim 6
Dependent Claim
45 words
A method according to claim 1, wherein the step of forming the damaged layer includes the steps of: forming a resist layer provided with holes on the surface of the superconducting thin film; and implanting ions in the entire part of the surface from above.
Claim 7
Dependent Claim
21 words
A method according to claim 5 wherein the superconducting film contains bismuth and the ion beams are Si ++ ion beams.
Claim 8
Dependent Claim
20 words
A method according to claim 5, wherein the superconducting film contains bismuth and the ion beams are Au ion beams.
Claim 9
Independent Claim
49 words
A method of producing a Josephson junction device comprising the steps of: forming an oxide film on a substrate; forming an oxide superconducting film on the oxide film; forming a damaged layer by irradiating the superconducting film; and removing the damaged layer by treatment with an aqueous alkaline solution.
Claim 10
Independent Claim
49 words
A method of producing a Josephson junction device comprising the steps of: forming an oxide film on a substrate; forming an oxide superconducting film on the oxide film; forming a damaged layer by irradiating the superconducting film; and removing the damaged layer by treatment with an aqueous alkaline solution.
Claim 11
Dependent Claim
27 words
A method according to claim 8, wherein the constituent elements of the oxide thin film constitute a part of the constituent elements of the superconducting thin film.
Claim 12
Dependent Claim
21 words
A method according to claim 9, wherein the superconducting film contains bismuth and the ion beams are Si ++ ion beams.
Claim 13
Dependent Claim
20 words
A method according to claim 9, wherein the superconducting film contains bismuth and the ion beams are Au ion beams.
References Cited (Backward Citations)
US5039656A
Cited
US5053383A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |