US5741742A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of aluminum-alloy pattern
Assignee: Sony Corp
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Filing: 1996-08-12
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Granted: 1998-04-21
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Expires: 2016-08-12
Abstract
Abstract A method of forming an aluminum-alloy pattern at room temperature, which is capable of eliminating the generation of after-corrosion and enhancing the anisotropic processing. In a first step, an etching mask made of a silicon nitride based film is formed on an aluminum-alloy film formed on a barrier metal layer which is formed on a substrate. In a second step, the aluminum-alloy film is dry-etched at room temperature, to form a pattern of the aluminum-alloy film. The etching selection ratio of the aluminum-alloy film to the etching mask is thus improved, and further a sidewall protective film made of aluminum nitride is formed on the etching sidewall, thereby sufficiently performing the anisotropic processing for the aluminum-alloy pattern. In subsequent steps, the barrier metal layer may also be etched and removed at room temperature, and a further sidewall protective film made of aluminum oxide is formed on the etching sidewall as a result of oxygen plasma processing. Any remaining barrier metal layer may be perfectly removed as a final step as a result of over-etching.
Inventors
- 👤 Yukihiro Kamide
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/71; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
150 words
A method of manufacturing an integrated semiconductor device comprising the steps of: forming a barrier metal layer over a substrate; forming a conductive layer of aluminum-alloy over said barrier metal layer; providing a patterned mask layer comprising a silicon nitride based film on the conductive layer, the mask layer having a resistance against an etching gas used for etching the conductive layer and a function of supplying a component forming a film for protecting a sidewall of the conductive layer; patterning the conductive layer by dry-etching by using the patterned mask layer at or about room temperature wherein said mask layer deposits a protection film on the sidewall of the conductive layer; patterning the barrier metal layer by dry-etching; oxygen plasma processing for forming aluminum oxide on the side wall of the conductive layer; and over-etching for perfectly removing the remaining part of the barrier metal layer on the substrate.
Claim 2
Independent Claim
150 words
A method of manufacturing an integrated semiconductor device comprising the steps of: forming a barrier metal layer over a substrate; forming a conductive layer of aluminum-alloy over said barrier metal layer; providing a patterned mask layer comprising a silicon nitride based film on the conductive layer, the mask layer having a resistance against an etching gas used for etching the conductive layer and a function of supplying a component forming a film for protecting a sidewall of the conductive layer; patterning the conductive layer by dry-etching by using the patterned mask layer at or about room temperature wherein said mask layer deposits a protection film on the sidewall of the conductive layer; patterning the barrier metal layer by dry-etching; oxygen plasma processing for forming aluminum oxide on the side wall of the conductive layer; and over-etching for perfectly removing the remaining part of the barrier metal layer on the substrate.
Claim 3
Dependent Claim
29 words
A method of manufacturing an integrated semiconductor device according to claim 1, wherein a reflection preventive layer film is provided between the conductive layer and the patterned mask layer.
Claim 4
Independent Claim
163 words
A method of manufacturing an integrated semiconductor device comprising-the steps of: forming a barrier metal layer over a substrate; forming a conductive layer of aluminum-alloy over said barrier metal layer; providing a double-layered mask on the conductive layer, the double-layered mask comprising a lower mask having a resistance against an etching gas used for etching the conductive layer and an upper layer comprising a silicon nitride based film for supplying a component forming a film for protecting a sidewall of the conductive layer upon etching the conductive layer; patterning the conductive layer by dry-etching by using the double-layered mask at or about room temperature wherein said upper layer deposits a protection film on the sidewall of the conductive layer; oxygen plasma processing for removing said upper mask layer and forming aluminum oxide on the side wall of the conductive layer; patterning the barrier metal layer by dry-etching; and over-etching for perfectly removing the remaining part of the barrier metal layer on the substrate.
Claim 5
Independent Claim
163 words
A method of manufacturing an integrated semiconductor device comprising-the steps of: forming a barrier metal layer over a substrate; forming a conductive layer of aluminum-alloy over said barrier metal layer; providing a double-layered mask on the conductive layer, the double-layered mask comprising a lower mask having a resistance against an etching gas used for etching the conductive layer and an upper layer comprising a silicon nitride based film for supplying a component forming a film for protecting a sidewall of the conductive layer upon etching the conductive layer; patterning the conductive layer by dry-etching by using the double-layered mask at or about room temperature wherein said upper layer deposits a protection film on the sidewall of the conductive layer; oxygen plasma processing for removing said upper mask layer and forming aluminum oxide on the side wall of the conductive layer; patterning the barrier metal layer by dry-etching; and over-etching for perfectly removing the remaining part of the barrier metal layer on the substrate.
Claim 6
Dependent Claim
39 words
A method of manufacturing an integrated semiconductor device according to claim 3, wherein the lower layer mask comprises at least one substance selected from the group consisting of a silicon nitride based film and a silicon oxide based film.
Claim 7
Dependent Claim
28 words
A method of manufacturing an integrated semiconductor device according to claim 3, wherein a reflection preventive film is provided between the conductive layer and the patterned mask layer.
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| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
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