Process for fabricating conductors used for integrated circuit connections and the like

Claim 2

A process for fabricating metal conductors useful in integrated circuit construction which comprises the steps of: a. depositing an etch mask on the surface of a selected metal substrate or layer, b. dry etching the surfaces of said metal layer or substrate exposed by said etch mask in the presence of silicon tetrabromide, SiBr 4 , and simultaneously c. depositing a silicon-containing inorganic material on the side walls of metal conductors thus formed in the above etching process to thereby provide sidewall protection of said conductors and retard the horizontal etching or lateral undercutting thereof.

Claim 3

The process defined in claim 1 wherein said layer or substrate is tungsten and said etch mask is formed of a photoresist polymer.

Claim 4

The process defined in claim 1 wherein said silicon-containing inorganic material contains either silicon dioxide, SiO 2 , silicon nitride, Si 3 N 4 , or another silicon containing dielectric material.

Claim 5

The process defined in claim 3 wherein said metal layer or substrate is tungsten and etch mask is formed of a photoresist polymer.

Claim 6

The process defined in claim 1 wherein said inorganic material further contains nitrogen which is supplied by accelerating ions into exposed areas of said substrate in the presence of a reactive etchant materials removing gas and further in the presence of a sidewall passivation additive gas, said sidewall passivation additive gas is selected from the group consisting of silicon tetrafluoride, silicon tetrachloride, and

Claim 7

A process for forming sidewall passivation films on the sidewalls of conductors while being etched in a dry etching environment which includes the steps of: a. depositing an etch mask on the surface of a conductive substrate, and b. forming a nitrogen containing inorganic film on the sidewalls of conductors etched from said substrate while simultaneously accelerating ions into bombardment with areas of said substrate exposed by said etch mask and in the presence of a reactive etchant materials removing gas, and further in the presence of a sidewall passivation additive gas, said sidewall passivation additive gas is selected from the group consisting of silicon tetrafluoride, silicon tetrachloride, and silicon tetrabromide, and said reactive etchant materials removing gas for supplying nitrogen to said inorganic film is selected from the group consisting of ammonia, NH 3 , and nitrous oxide, N 2 O.

Claim 8

A process for forming sidewall passivation films on the sidewalls of conductors while being etched in a dry etching environment which includes the steps of: a. depositing an etch mask on the surface of a conductive substrate, and b. forming a nitrogen containing inorganic film on the sidewalls of conductors etched from said substrate while simultaneously accelerating ions into bombardment with areas of said substrate exposed by said etch mask and in the presence of a reactive etchant materials removing gas, and further in the presence of a sidewall passivation additive gas, said sidewall passivation additive gas is selected from the group consisting of silicon tetrafluoride, silicon tetrachloride, and silicon tetrabromide, and said reactive etchant materials removing gas for supplying nitrogen to said inorganic film is selected from the group consisting of ammonia, NH 3 , and nitrous oxide, N 2 O.

Claim 9

The process defined in claim 6 wherein said etch mask is formed of a polymer resist material directly on the surface of a metal substrate, and said metal substrate is selected from the group of metals consisting of tungsten, titanium-tungsten, aluminum, silicon-titanium, and tantalum.