Anisotropic plasma etching of tungsten

Claim 2

A process for anisotropic etching of tungsten, comprising the steps of: forming a plasma gas mixture having fluorinated and chlorinated gases; subjecting said tungsten to said plasma gas mixture; said chlorinated gases forming along side walls developed during said etching process and preventing etching of said side walls; whereby anisotropic etch of said tungsten is achieved.

Claim 3

The process defined by claim 1, wherein said plasma gas mixture is comprised of SF 6 and Cl 2 .

Claim 4

The process defined by claim 2, wherein said plasma gas mixture has a chlorine concentration of approximately 20-50 percent.

Claim 5

The process defined by claim 3, further including the step of introducing helium into said plasma gas mixture.

Claim 6

A process for anisotropic etching of a tungsten layer in an etcher during a fabrication of a semiconductor device, comprising the steps of: forming a layer of photoresist on a predetermined surface of said tungsten layer; subjecting said tungsten layer to a mixture of fluorinated and chlorinated gases in said etcher; said chlorinated gases forming along side walls developed during said etching process and preventing etching of said side walls; said photoresist layer preventing said fluorinated gas from etching said tungsten layer except where said tungsten layer is exposed; applying RF power to electrodes wherein said gas mixture forms plasma; etching said tungsten until an underlying layer is exposed; whereby anisotropic etch of said tungsten is achieved.

Claim 7

A process for anisotropic etching of a tungsten layer in an etcher during a fabrication of a semiconductor device, comprising the steps of: forming a layer of photoresist on a predetermined surface of said tungsten layer; subjecting said tungsten layer to a mixture of fluorinated and chlorinated gases in said etcher; said chlorinated gases forming along side walls developed during said etching process and preventing etching of said side walls; said photoresist layer preventing said fluorinated gas from etching said tungsten layer except where said tungsten layer is exposed; applying RF power to electrodes wherein said gas mixture forms plasma; etching said tungsten until an underlying layer is exposed; whereby anisotropic etch of said tungsten is achieved.

Claim 8

The process defined by claim 5, wherein said plasma gas mixture is comprised of SF 6 and Cl 2 .

Claim 9

The process defined by claim 6, wherein said plasma gas mixture has a chlorine concentration of approximately 20-50 percent.

Claim 10

The process defined by claim 7, further including the step of introducing helium into said plasma gas mixture.

Claim 11

The process defined by claim 5, wherein said electrical power is approximately 150-200 watts.

Claim 12

The process defined by claim 9, wherein said tungsten layer is deposited by a chemical vapor deposition process.

Claim 13

The process defined by claim 5, wherein said fluorinated gas is selected from the group consisting of SF 6 , CF 4 and NF 3 .

Claim 14

The process defined by claim 5, wherein said chlorinated gas is selected from the group consisting of Cl 2 , CCl 2 F 2 , CCl 3 F, CClF 3 and CCl 4 .

Claim 15

A process for etching a tungsten film layer in a plasma etcher during a fabrication of a semiconductor device, comprising the steps of: forming a layer of photoresist on a predetermined surface of said tungsten film layer; placing said semiconductor device between electrodes in said plasma etcher; subjecting said tungsten layer to a mixture of SF 6 and Cl 2 at approximately 100-200 sccm at approximately 200-400 millitorr of pressure; applying electrical power of approximately 150-275 watts to said gas mixture to form a plasma; etching said tungsten until an underlying layer is exposed and detected using optical emission end-point detection technique; whereby anisotropic etch is achieved.

Claim 16

A process for etching a tungsten film layer in a plasma etcher during a fabrication of a semiconductor device, comprising the steps of: forming a layer of photoresist on a predetermined surface of said tungsten film layer; placing said semiconductor device between electrodes in said plasma etcher; subjecting said tungsten layer to a mixture of SF 6 and Cl 2 at approximately 100-200 sccm at approximately 200-400 millitorr of pressure; applying electrical power of approximately 150-275 watts to said gas mixture to form a plasma; etching said tungsten until an underlying layer is exposed and detected using optical emission end-point detection technique; whereby anisotropic etch is achieved.

Claim 17

The process defined by claim 13, wherein said plasma gas mixture has a chlorine concentration of approximately 20-50 percent.

Claim 18

The process defined by claim 14, further including the step of introducing helium into said plasma gas mixture.

Claim 19

The process defined by claim 15, wherein said electrode has a gap of 0.6-1.0 centimeters and an electrode temperature of 20° centigrade.