Semiconductor device

Abstract

Abstract PURPOSE:To prevent the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor, by coating the side faces of the wiring conductor with alumina and also coating its upper face with a metal having a high melting point. CONSTITUTION:A plasma silicon nitride film pattern 4a, a high-melting metal layer pattern 3a, and a conductor layer pattern 2a are formed through an etching process by using a resist pattern 5 as a mask. After that, the pattern 5 is removed. The whole face on a semiconductor substrate is oxidized by O2 sauntering or anodizing. The side faces of the pattern 2a are oxidized to form an alumina film 6 with a film thickness of hundreds of Angstrom . This structure prevents the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor.

Inventors

• 👤 Tomoyuki Hikita

Bibliographic Details