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US5734182A
Expired / Lapsed
US
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Light-emitting gallium nitride-based compound semiconducor device
Assignee: Nichia Corp
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Filing: 1996-06-10
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Granted: 1998-03-31
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Expires: 2016-06-10
Abstract
Abstract A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In x Ga 1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
Inventors
- 👤 Shuji Nakamura
- 👤 Takashi Mukai
- 👤 Naruhito Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:55
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10H20/8215; H10H20/8252
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
83 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second surfaces and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with both p-type and n-type impurities; a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor; and a second clad layer joined to said second surface of said light-emitting layer and comprising a p-type gallium nitride-based compound semiconductor.
Claim 2
Dependent Claim
83 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second surfaces and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with both p-type and n-type impurities; a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor; and a second clad layer joined to said second surface of said light-emitting layer and comprising a p-type gallium nitride-based compound semiconductor.
Claim 3
Dependent Claim
30 words
The device according to claim 1, wherein said p-type impurity doped in said light-emitting layer comprises at least one element selected from cadmium, zinc, beryllium, magnesium, calcium, strontium and barium.
Claim 4
Dependent Claim
26 words
The device according to claim 1, wherein said n-type impurity doped in said light-emitting layer comprises at least one element selected from silicon, germanium and tin.
Claim 5
Dependent Claim
28 words
The device according to claim 1, wherein said p-type impurity doped in said light-emitting layer comprises zinc and said n-type impurity doped in said light-emitting layer comprises silicon.
Claim 6
Dependent Claim
24 words
The device according to claim 1, wherein said double-heterostructure has a contact layer comprising a p-type gallium nitride joined to said second clad layer.
Claim 7
Dependent Claim
14 words
The device according to claim 5, wherein said contact layer is doped with magnesium.
Claim 8
Dependent Claim
24 words
The device according to claim 1, wherein said clad layer comprises a semiconductor represented by the formula Ga y Al 1-y N where 0≦y≦1.
Claim 9
Dependent Claim
25 words
The device according to claim 1, wherein said second clad layer comprises a semiconductor represented by the formula Ga z Al 1-z N where 0≦z≦1.
Claim 10
Dependent Claim
18 words
The device according to claim 6, wherein said second clad layer comprises aluminum and is doped with magnesium.
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| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
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