US5727008A
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Semiconductor light emitting device, semiconductor laser device, and method of fabricating semiconductor light emitting device
Assignee: Sanyo Electric Co Ltd
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Filing: 1996-05-17
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Granted: 1998-03-10
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Expires: 2016-05-17
Abstract
Abstract A semiconductor light emitting device and a semiconductor laser device having an epitaxial growth layer composed of a III-V group nitride semiconductor. An AlN buffer layer, an n-type GaN intermediate layer, an n-type Al 1-x Ga X N cladding layer, an In 1-Y Ga Y N active layer and a p-type Al 1-X Ga X N cladding layer, and a p-type GaN contact layer are successively formed on an n-type 6H--SiC substrate having a {0001} crystal growth plane. A p-side electrode is formed on the upper surface of the p-type GaN contact layer, and an n-side electrode is formed on the lower surface of the n-type 6H--SiC substrate, after which the n-type 6H--SiC substrate is cleaved along a {1120} plane to form a cavity facet.
Inventors
- 👤 Kazuyuki Koga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:04
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/02; H01S5/0201; H01S5/0202; H01S5/0206; H01S5/021; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/3202; H01S5/320225; H01S5/34; H01S5/343; H01S5/34333
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
78 words
A semiconductor light emitting device comprising: a silicon carbide substrate; and an epitaxial growth layer formed on said silicon carbide substrate and composed of a nitride system semiconductor including at least one of gallium, aluminum and indium; said semiconductor light emitting device having a pair of facets or a pair of side surfaces which is formed of a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer.
Claim 2
Dependent Claim
78 words
A semiconductor light emitting device comprising: a silicon carbide substrate; and an epitaxial growth layer formed on said silicon carbide substrate and composed of a nitride system semiconductor including at least one of gallium, aluminum and indium; said semiconductor light emitting device having a pair of facets or a pair of side surfaces which is formed of a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer.
Claim 3
Dependent Claim
26 words
The semiconductor light emitting device according to claim 1, wherein said pair of facets or said pair of side surfaces is formed of a cleavage plane.
Claim 4
Dependent Claim
33 words
The semiconductor light emitting device according to claim 1, wherein said epitaxial growth layer is formed on a (0001) plane or a plane equivalent to said (0001) plane of said silicon carbide substrate.
Claim 5
Dependent Claim
49 words
The semiconductor light emitting device according to claim 1, wherein said silicon carbide substrate includes impurity elements for providing conductivity, further comprising: a first electrode formed on an upper surface of said epitaxial growth layer, and a second electrode formed on a lower surface of said silicon carbide substrate.
Claim 6
Dependent Claim
42 words
The semiconductor light emitting device according to claim 1, wherein said nitride system semiconductor is composed of GaN, InN, AlN or a compound of N and one or a plurality of elements selected from a group consisting of Ga, In and Al.
Claim 7
Dependent Claim
54 words
The semiconductor light emitting device according to claim 1, wherein said silicon carbide substrate is of a hexagonal system, and the plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer is a (2110) plane, a (1210) plane, a (1120) plane, a (2110) plane or a (1210) plane.
Claim 8
Dependent Claim
36 words
The semiconductor light emitting device according to claim 1, wherein said silicon carbide substrate is of a cubic system, and the plane equivalent to said (1120) plane of said silicon carbide substrate is a {101} plane.
Claim 9
Dependent Claim
71 words
A semiconductor laser device comprising a silicon carbide substrate; and an epitaxial growth layer formed on said silicon carbide substrate and composed of a nitride system semiconductor including at least one of gallium, aluminum and indium, said semiconductor laser device having a pair of cavity facets which is formed of a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer.
Claim 10
Dependent Claim
71 words
A semiconductor laser device comprising a silicon carbide substrate; and an epitaxial growth layer formed on said silicon carbide substrate and composed of a nitride system semiconductor including at least one of gallium, aluminum and indium, said semiconductor laser device having a pair of cavity facets which is formed of a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer.
Claim 11
Dependent Claim
20 words
The semiconductor laser device according to claim 8, wherein said pair of cavity facets is composed of a cleavage plane.
Claim 12
Dependent Claim
34 words
The semiconductor laser device according to claim 8, wherein said epitaxial growth layer has a pair of side surfaces which is perpendicular to said pair of cavity facets and formed of a {1010} plane.
Claim 13
Dependent Claim
32 words
The semiconductor laser device according to claim 8, wherein said epitaxial growth layer is formed on a (0001) plane or a plane equivalent to said (0001) plane of said silicon carbide substrate.
Claim 14
Dependent Claim
48 words
The semiconductor laser device according to claim 8, wherein said silicon carbide substrate includes impurity elements for providing conductivity, further comprising a first electrode formed on an upper surface of said epitaxial growth layer, and a second electrode formed on a lower surface of said silicon carbide substrate.
Claim 15
Dependent Claim
41 words
The semiconductor laser device according to claim 8, wherein said nitride system semiconductor is composed of a GaN, InN, AlN or compound of N and one or a plurality of elements selected from a group consisting of Ga, In and Al.
Claim 16
Dependent Claim
53 words
The semiconductor laser device according to claim 8, wherein said silicon carbide substrate is of a hexagonal system, and the plane equivalent to said (1120) plane of said silicon carbide substrate and said epitaxial growth layer is a (2110) plane, a (1210) plane, a (1120) plane, a (2110) plane or a (1210) plane.
Claim 17
Dependent Claim
35 words
The semiconductor laser device according to claim 8, wherein said silicon carbide substrate is of a cubic system, and the plane equivalent to said (1120) plane of said silicon carbide substrate is a {101} plane.
Claim 18
Dependent Claim
37 words
The semiconductor laser device according to claim 8, wherein said epitaxial growth layer comprises a first cladding layer, an active layer formed on said first cladding layer, and a second cladding layer formed on said active layer.
Claim 19
Independent Claim
84 words
A method of fabricating a semiconductor light emitting device, comprises the steps of: forming on a silicon carbide substrate an epitaxial growth layer composed of a nitride system semiconductor including at least one of gallium, aluminum and indium; and forming a pair of facets or a pair of side surfaces of said semiconductor light emitting device by cleaving said silicon carbide substrate and said epitaxial growth layer along a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate.
Claim 20
Independent Claim
84 words
A method of fabricating a semiconductor light emitting device, comprises the steps of: forming on a silicon carbide substrate an epitaxial growth layer composed of a nitride system semiconductor including at least one of gallium, aluminum and indium; and forming a pair of facets or a pair of side surfaces of said semiconductor light emitting device by cleaving said silicon carbide substrate and said epitaxial growth layer along a (1120) plane or a plane equivalent to said (1120) plane of said silicon carbide substrate.
Claim 21
Dependent Claim
30 words
The method according to claim 17, wherein said epitaxial growth layer is formed on a (0001) plane or a plane equivalent to said (0001) plane of said silicon carbide substrate.
Claim 22
Dependent Claim
49 words
The method according to claim 17, wherein said silicon carbide substrate includes impurity elements for providing conductivity, further comprising the steps of forming a first electrode on an upper surface of said epitaxial growth layer, and forming a second electrode on a lower surface of said silicon carbide substrate.
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