US5387804A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diode
Assignee: Sharp Corp
•
Filing: 1992-09-14
•
Granted: 1995-02-07
•
Expires: 2012-09-14
Abstract
Abstract A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga x Al 1-x N, 0<x<1).
Inventors
- 👤 Akira Suzuki
- 👤 Katsuki Furukawa
- 👤 Mitsuhiro Shigeta
- 👤 Yoshihisa Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/811; H10H20/826
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
88 words
A light emitting diode comprising at least one heterojunction including a p-type silicon carbide (SIC) and an n-type semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga x Al 1-x N, 0<x<1), a density of positive holes in said p-type silicon carbide being in the order of 10 18 to 10 19 cm -3 ; and a density of electrons in said n-type semiconductor material being in the order of 10 16 to 10 17 cm -3 .
Claim 2
Dependent Claim
88 words
A light emitting diode comprising at least one heterojunction including a p-type silicon carbide (SIC) and an n-type semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga x Al 1-x N, 0<x<1), a density of positive holes in said p-type silicon carbide being in the order of 10 18 to 10 19 cm -3 ; and a density of electrons in said n-type semiconductor material being in the order of 10 16 to 10 17 cm -3 .
Claim 3
Dependent Claim
19 words
A light emitting diode according to claim 1, wherein said n-type semiconductor material is formed by chemical vapor deposition.
Claim 4
Dependent Claim
135 words
A light emitting diode comprising at least one heterojunction including: a substrate made of a p-type silicon carbide (SiC); a first n-type semiconductor layer made of silicon carbide, formed on said substrate; and a second n-type semiconductor layer made of a semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga x Al 1-x N, O<x<1), formed on said first n-type semiconductor layer, a density of positive holes in said substrate being in the order of 10 18 to 10 19 cm -3 , a density of electrons in said first n-type semiconductor layer being in the order of 10 16 to 10 17 cm -3 , a density of electrons in said second n-type semiconductor layer being in the order 10 17 cm -3 .
Claim 5
Dependent Claim
135 words
A light emitting diode comprising at least one heterojunction including: a substrate made of a p-type silicon carbide (SiC); a first n-type semiconductor layer made of silicon carbide, formed on said substrate; and a second n-type semiconductor layer made of a semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga x Al 1-x N, O<x<1), formed on said first n-type semiconductor layer, a density of positive holes in said substrate being in the order of 10 18 to 10 19 cm -3 , a density of electrons in said first n-type semiconductor layer being in the order of 10 16 to 10 17 cm -3 , a density of electrons in said second n-type semiconductor layer being in the order 10 17 cm -3 .
References Cited (Backward Citations)
US3634149A
Cited
US3758875A
Cited
US3812516A
Cited
US3986193A
Cited
DE2738329A1
Cited
JPS5864074A
Cited
US4626322A
Cited
JPS61182280A
Cited
US4855249A
Cited
US4903088A
Cited
US4918497A
Cited
US5005057A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-06 | 1998-08-08 | 1999-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-06 | 2002-08-08 | 2003-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-06 | 2006-08-08 | 2007-02-07 | $7700.00 | Window Closed / Lapsed |