US4626322A
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Photoelectrochemical preparation of a solid-state semiconductor photonic device
Assignee: Union Oil Company of California
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Filing: 1985-05-31
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Granted: 1986-12-02
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Expires: 2005-05-31
Abstract
Abstract A solid-state semiconductor photonic device is prepared by a photoelectrochemical deposition method. The device contains a highly conductive coating material including one or more metals and/or semiconductors on a substrate containing a semiconductor material. The device is utilized in photodetectors, including radiometric detection cells, in conversions of electrical energy to optical radiation, such as light-emitting-diodes and diodes lasers, and in photovoltaic cells, including Schottky-barrier cells.
Inventors
- 👤 Jay A. Switzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:44
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; C; C25; C25D; C25D5/00; C25D5/011; H10F19/00; H10F19/20; H10F77/00; H10F77/95; H10F77/953; H10F77/955; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S204/00; Y10S204/03; Y10S205/00; Y10S205/915; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
54 words
A method for the preparation of a solid-state semiconductor photonic device comprising photoelectrochemically depositing a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said conductive coating material selected from the group consisting of metals and semiconductors.
Claim 2
Independent Claim
54 words
A method for the preparation of a solid-state semiconductor photonic device comprising photoelectrochemically depositing a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said conductive coating material selected from the group consisting of metals and semiconductors.
Claim 3
Dependent Claim
24 words
The method defined in claim 1 wherein said device is a photodetector selected from the group consisting of photoconductors, photodiodes, avalanche diodes and phototransistors.
Claim 4
Dependent Claim
28 words
The method defined in claim 1 wherein said device converts electrical energy into optical radiation and is selected from the group consisting of light-emitting diodes and diode lasers.
Claim 5
Dependent Claim
26 words
The method defined in claim 1 wherein said device is a photovoltaic device selected from the group consisting of metal-semiconductor, metal-insulator-semiconductor, semiconductor-semiconductor and semiconductor-insulator-semiconductor photovoltaic cells.
Claim 6
Dependent Claim
14 words
The method defined in claim 1 wherein said photoelectrochemical depositing is potentiostatic photoelectrochemical depositing.
Claim 7
Dependent Claim
37 words
The method defined in claim 1 wherein said conductive coating material is a metal selected from the group consisting of silver, gold, aluminum, platinum, chromium, copper, hafnium, indium, magnesium, molybdenum, nickel, lead, palladium, tantalum, titanium, and tungsten.
Claim 8
Dependent Claim
60 words
The method defined in claim 1 wherein said conductive coating material is a semiconductor selected from the group consisting of Tl 2 O 3 , CdO, Bi 2 O 3 , PbO 2 , Cu 2 O, Cr 2 O 3 , Ag 2 O, RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 and PdCrO 2 .
Claim 9
Dependent Claim
24 words
The method defined in claim 1 wherein said conductive coating material has a resistively less than about 10 -2 ohm-cm, measured at room temperature.
Claim 10
Dependent Claim
20 words
The method defined in claim 1 wherein a photoelectrochemical cell utilized in said photoelectrochemical deposition is biased with electrical energy.
Claim 11
Dependent Claim
15 words
The method defined in claim 1 further comprising a varied light intensity during said deposition.
Claim 12
Dependent Claim
14 words
The method defined in claim 1 further comprising a varied current during said deposition.
Claim 13
Dependent Claim
14 words
The method defined in claim 1 further comprising a varied potential during said deposition.
Claim 14
Independent Claim
48 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a metal which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
Claim 15
Independent Claim
48 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a metal which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
Claim 16
Dependent Claim
20 words
The method defined in claim 13 wherein said metal is selected from the group consisting of aluminum, gold, and platinum.
Claim 17
Dependent Claim
20 words
The method defined in claim 13 wherein said device is selected from the group consisting of photovoltaic cells and photodetectors.
Claim 18
Dependent Claim
22 words
The method defined in claim 13 wherein said substrate is selected from the group consisting of GaAs, InP, CdSe, Si, and GaP.
Claim 19
Dependent Claim
48 words
The method defined in claim 13 further comprising the step of forming a thin layer of material having a band gap greater than about 3.0 e.V. between said semiconductor material of said substrate and said conductive coating material prior to said photoelectrochemical deposition of said conductive coating material.
Claim 20
Independent Claim
48 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a semiconductor which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
Claim 21
Independent Claim
48 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectrochemical deposition of a conductive coating material containing a semiconductor which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
Claim 22
Dependent Claim
62 words
The method defined in claim 18 wherein said semiconductor contained in said coating material is selected from the group consisting of Tl 2 O 3 , CdO, Bi 2 O 3 , PbO 2 , Cu 2 O, Cr 2 O 3 , Ag 2 O, RuS 2 , PtCoO 2 , PdCoO 2 , PdRhO 2 , and PdCrO 2 .
Claim 23
Dependent Claim
26 words
The method defined in claim 18 wherein said semiconductor contained in said substrate is selected from the group consisting of GaAs, InP, CdSe, Si, and GaP.
Claim 24
Dependent Claim
24 words
The method defined in claim 18 wherein said device is selected from the group consisting of photovoltaic cells, photodetectors, light-emitting diodes, and diode lasers.
Claim 25
Dependent Claim
118 words
The method defined in claim 18 wherein said device is a light-emitting diode and said substrate is selected from the group consisting of GaN, SiC, AlP, GaP, GaAs, InP, AlAs, ZnS, ZnO, BeTe, ZnSe, CdS, ZnTe, GaS 2 , Ga 2 S 3 , GaS, GaSe, CdSe, CdTe, AlS 6 , SnO 2 , CuCl, CuBr, In 2 O 3 , Ga 2 O 3 , ZnP 2 , CdP 2 , Cu 2 O, MgSiP 2 , CdSiP 2 , ZnSiAs 2 , ZnSiP 2 , ZnGeP 2 , CdGeP 2 , CuAlS 2 , CuAlSe 2 , AgGaS 2 , CuGaS 2 , AgInS 2 , AgGaSe 2 , CuGaSe 2 , and CuInSe 2 .
Claim 26
Dependent Claim
47 words
The method defined in claim 18 further comprising the step of forming a thin layer of material having a band gap greater than about 3.0 e.V. between said semiconductor material of said substrate and said conductive coating material prior to said photoelectrochemical deposition of said coating material.
Claim 27
Dependent Claim
48 words
The method defined in claim 18 wherein said device is a diode laser and said semiconductor in said substrate and in said conductive coating material contains elements selected from the group consisting of Pb, Sn, Se, Te, S, In, As, Sb, Cd, Hg, P, Al, Ga, and Zn.
Claim 28
Independent Claim
57 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectroless deposition of a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said coating material selected from the group consisting of metals and semiconductors.
Claim 29
Independent Claim
57 words
A method for the preparation of a solid-state semiconductor photonic device comprising the step of photoelectroless deposition of a conductive coating material which forms a junction with a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors, said coating material selected from the group consisting of metals and semiconductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-12-01 | 1990-06-02 | 1990-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-01 | 1994-06-02 | 1994-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-01 | 1998-06-02 | 1998-12-02 | $7700.00 | Window Closed / Lapsed |