US5726075A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating microbump interconnect for bare semiconductor dice
Assignee: Micron Technology Inc
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Filing: 1996-03-29
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Granted: 1998-03-10
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Expires: 2016-03-29
Abstract
Abstract A method for forming an interconnect for a bare semiconductor is provided. The interconnect includes an insulating film with a pattern of conductors and microbumps adapted to make an electrical connection with contact locations on the die. The insulating film and conductors are mounted to a rigid substrate (e.g., silicon) using an lo elastomeric adhesive. The method includes forming conductive bus bars in electrical communication with the pattern of conductors to provide an electrical path for electroplating the microbumps onto the conductors. Following the electroplating step, the bus bars are severed and separate electrical paths are formed to the conductors. The bus bar can also be used in the completed interconnect to provide a common electrical path to select conductors. The interconnect can be used for testing the die or for providing a permanent electrical connection to the die.
Inventors
- 👤 Warren M. Farnworth
- 👤 David R. Hembree
- 👤 Derek Gochnour
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:52
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W70/00; H10W70/099; H10W72/20; H10W72/251; H10W72/90; H10W72/941; H10W72/944; H10W72/9445
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
58 words
A method for forming an interconnect for a semiconductor die, comprising: forming a conductor on an insulating film; forming a conductive member on the insulating film in electrical communication with the conductor; electroplating a metal onto the conductor using the conductive member to provide an electrical path; and severing the electrical communication between the conductive member and conductor.
Claim 2
Independent Claim
58 words
A method for forming an interconnect for a semiconductor die, comprising: forming a conductor on an insulating film; forming a conductive member on the insulating film in electrical communication with the conductor; electroplating a metal onto the conductor using the conductive member to provide an electrical path; and severing the electrical communication between the conductive member and conductor.
Claim 3
Dependent Claim
14 words
The method as claimed in claim 1 and wherein the metal is a microbump.
Claim 4
Dependent Claim
17 words
The method as claimed in claim 2 and further comprising attaching the insulating film to a substrate.
Claim 5
Dependent Claim
26 words
The method as claimed in claim 3 and wherein severing the electrical communication is by forming a groove in the substrate to sever the electrical path.
Claim 6
Independent Claim
73 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a conductor and a conductive bus bar on the insulating film with a connecting segment connecting the bus bar and conductor; electroplating a microbump in electrical communication with the conductor using the bus bar to provide an electrical path; severing the connecting segment between the bus bar and conductor; and forming an electrical path to the conductor.
Claim 7
Independent Claim
73 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a conductor and a conductive bus bar on the insulating film with a connecting segment connecting the bus bar and conductor; electroplating a microbump in electrical communication with the conductor using the bus bar to provide an electrical path; severing the connecting segment between the bus bar and conductor; and forming an electrical path to the conductor.
Claim 8
Dependent Claim
17 words
The method as claimed in claim 5 and further comprising attaching the insulating film to a substrate.
Claim 9
Dependent Claim
21 words
The method as claimed in claim 6 and wherein attaching the insulating film to the substrate is with an elastomeric adhesive.
Claim 10
Dependent Claim
22 words
The method as claimed in claim 7 and wherein the severing the connecting segment is by forming a groove in the substrate.
Claim 11
Dependent Claim
18 words
The method as claimed in claim 8 and wherein a plurality of conductors and connecting segments are formed.
Claim 12
Dependent Claim
25 words
The method as claimed in claim 9 and wherein a plurality of microbumps are formed in a pattern corresponding to contact locations on the die.
Claim 13
Dependent Claim
21 words
The method as claimed in claim 10 and wherein the microbumps are formed in alignment with vias in the insulating film.
Claim 14
Dependent Claim
28 words
The method as claimed in claim 11 and further comprising testing the die using the interconnect to establish a temporary electrical connection with contact locations on the die.
Claim 15
Dependent Claim
24 words
The method as claimed in claim 12 and further comprising using a die testing apparatus for retaining the die and interconnect during the testing.
Claim 16
Independent Claim
75 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a pattern of conductors and a conductive member on the insulating film with connecting segments connecting the conductors and conductive member; forming a pattern of vias through the insulating film to the conductors; electroplating a metal into the vias using the conductive member to provide a conductive path; and severing the connecting segments between the conductive member and conductors.
Claim 17
Independent Claim
75 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a pattern of conductors and a conductive member on the insulating film with connecting segments connecting the conductors and conductive member; forming a pattern of vias through the insulating film to the conductors; electroplating a metal into the vias using the conductive member to provide a conductive path; and severing the connecting segments between the conductive member and conductors.
Claim 18
Dependent Claim
22 words
The method as claimed in claim 14 and further comprising electroplating microbumps on the metal in the vias using the conductive member.
Claim 19
Dependent Claim
34 words
The method as claimed in claim 14 and wherein severing the connecting segments between the conductive member and conductors is with a method selected from the group consisting of sawing, scribing and laser ablation.
Claim 20
Dependent Claim
21 words
The method as claimed in claim 14 and further comprising following the severing step forming separate electrical paths to the conductors.
Claim 21
Dependent Claim
18 words
The method as claimed in claim 14 and further comprising attaching the insulating film to a rigid substrate.
Claim 22
Dependent Claim
20 words
The method as claimed in claim 18 and wherein the severing step is by forming a groove in the substrate.
Claim 23
Dependent Claim
22 words
The method as claimed in claim 18 and wherein attaching the insulating film to the substrate is with a compliant adhesive layer.
Claim 24
Dependent Claim
30 words
The method as claimed in claim 14 and further comprising forming at least one connecting segment between the conductors and conductive member that is not severed during the severing step.
Claim 25
Dependent Claim
31 words
The method as claimed in claim 14 and wherein the insulating film is formed of a material selected from the group consisting of polyimide, polyester, epoxy, urethane, polystyrene, silicone and polycarbonate.
Claim 26
Dependent Claim
24 words
The method as claimed in claim 14 and wherein the metal is selected from the group consisting of Ni, Au, Cu, Pd and solder.
Claim 27
Independent Claim
90 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a pattern of conductors and a conductive bus bar on the insulating film with connecting segments connecting the bus bar and conductors; forming a pattern of vias through the insulating film to the conductors; electroplating a metal into the vias and microbumps on the metal using the bus bar; attaching the insulating film to a substrate; severing the connecting segments between the bus bar and conductors; and forming separate electrical paths to the conductors.
Claim 28
Independent Claim
90 words
A method for forming an interconnect for a semiconductor die, comprising: forming an insulating film; forming a pattern of conductors and a conductive bus bar on the insulating film with connecting segments connecting the bus bar and conductors; forming a pattern of vias through the insulating film to the conductors; electroplating a metal into the vias and microbumps on the metal using the bus bar; attaching the insulating film to a substrate; severing the connecting segments between the bus bar and conductors; and forming separate electrical paths to the conductors.
Claim 29
Dependent Claim
21 words
The method as claimed in claim 24 and wherein severing the connecting segments is by forming a groove in the substrate.
Claim 30
Dependent Claim
21 words
The method as claimed in claim 24 and wherein attaching the insulating film to the substrate is with an elastomeric adhesive.
Claim 31
Dependent Claim
16 words
The method as claimed in claim 24 and wherein the microbumps and metal are different materials.
Claim 32
Dependent Claim
17 words
The method as claimed in claim 24 and wherein the microbumps and metal are a same material.
Claim 33
Dependent Claim
28 words
The method as claimed in claim 24 and wherein the microbump is formed of a material selected from the group consisting of Ni, Au, Cu, Pd and solder.
Claim 34
Dependent Claim
16 words
The method as claimed in claim 24 and further comprising testing the die using the interconnect.
Claim 35
Dependent Claim
28 words
The method as claimed in claim 24 and further comprising forming a connecting segment between the conductors and bus bar that is not severed during the severing step.
Claim 36
Dependent Claim
27 words
The method as claimed in claim 24 and wherein the substrate is formed of a material selected from the group consisting of silicon, silicon-on-glass, silicon-on-sapphire and ceramic.
Claim 37
Dependent Claim
33 words
The method as claimed in claim 24 and wherein the insulating film is formed of a material selected from the group consisting of resin of polyimide, polyester, epoxy, urethane, polystyrene, silicone and polycarbonate.
Claim 38
Dependent Claim
23 words
The method as claimed in claim 24 and wherein the microbumps are formed in a pattern corresponding to contact locations on the die.
Claim 39
Dependent Claim
16 words
The method as claimed in claim 24 and wherein a pair of bus bars are formed.
Claim 40
Dependent Claim
25 words
The method as claimed in claim 24 and wherein the separate electrical paths include a path through the bus bar to a common electrical potential.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-09 | 2001-09-08 | 2002-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-09 | 2005-09-08 | 2006-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-09 | 2009-09-08 | 2010-03-10 | $7700.00 | Window Closed / Lapsed |