Method of forming a shallow trench isolation structure

Claim 1

A method of forming a trench isolation structure, comprising the steps of: forming a film on a semiconductor substrate; forming a trench in said semiconductor substrate through said film; depositing a dielectric material in said trench and on said film; forming an etch resistant film on an entire surface of said substrate by LPCVDLTC: removing said etch resistant film so as to remain on the portions of said dielectric material in said trench and on exposed portions of said film at edge regions of said trench; selectively removing said dielectric material on said film; and selectively removing said etch resistant film remaining on said dielectric material in said trench.

Claim 2

A method of forming a trench isolation structure, comprising the steps of: forming a film on a semiconductor substrate; forming a trench in said semiconductor substrate through said film; depositing a dielectric material in said trench and on said film; forming an etch resistant film on an entire surface of said substrate by LPCVDLTC: removing said etch resistant film so as to remain on the portions of said dielectric material in said trench and on exposed portions of said film at edge regions of said trench; selectively removing said dielectric material on said film; and selectively removing said etch resistant film remaining on said dielectric material in said trench.

Claim 12

A method of forming a trench isolation structure, comprising the steps of: forming a film on a semiconductor substrate; forming a trench in said semiconductor substrate through said film; depositing a dielectric material in said trench and on said film, said dielectric material in said trench having a height which is larger than a depth of said trench and smaller than a height of a surface of said film; forming an etch resistant film by LPCVD on an entire surface of said semiconductor substrate; removing said etch resistant film until an upper surface of said etch resistant film is substantially level with an upper surface of said dielectric material, said etch resistant film remaining on said dielectric material in said trench and on portions of said film located at an edge region of said trench; selectively removing said dielectric material on said film; and selectively removing said etch resistant film remaining on said dielectric material in said trench.

Claim 13

A method of forming a trench isolation structure, comprising the steps of: forming a film on a semiconductor substrate; forming a trench in said semiconductor substrate through said film; depositing a dielectric material in said trench and on said film, said dielectric material in said trench having a height which is larger than a depth of said trench and smaller than a height of a surface of said film; forming an etch resistant film by LPCVD on an entire surface of said semiconductor substrate; removing said etch resistant film until an upper surface of said etch resistant film is substantially level with an upper surface of said dielectric material, said etch resistant film remaining on said dielectric material in said trench and on portions of said film located at an edge region of said trench; selectively removing said dielectric material on said film; and selectively removing said etch resistant film remaining on said dielectric material in said trench.

Claim 23

A method of forming a trench isolation structure, comprising the steps of: forming a silicon nitride film on a semiconductor substrate; forming a trench in said semiconductor substrate through said silicon nitride film; depositing silicon dioxide in said trench and on said silicon nitride film, said silicon dioxide in said trench having a height which is greater than a depth of said trench and less than a height of a surface of said silicon nitride film, wherein said silicon nitride film is disposed between the portions of said silicon dioxide deposited in said trench and the portions of said silicon dioxide deposited on said silicon nitride film; forming a polysilicon film on an entire surface of said semiconductor substrate; removing said polysilicon film until an upper surface of said polysilicon film is substantially level with an upper surface of said silicon dioxide, said polysilicon film remaining on the portions of said silicon dioxide in said trench and on portions of said silicon nitride film located at an edge region of said trench; selectively removing the portions of said silicon dioxide on said silicon nitride film; and selectively removing said polysilicon film remaining on the portions of said silicon dioxide in said trench.

Claim 24

A method of forming a trench isolation structure, comprising the steps of: forming a silicon nitride film on a semiconductor substrate; forming a trench in said semiconductor substrate through said silicon nitride film; depositing silicon dioxide in said trench and on said silicon nitride film, said silicon dioxide in said trench having a height which is greater than a depth of said trench and less than a height of a surface of said silicon nitride film, wherein said silicon nitride film is disposed between the portions of said silicon dioxide deposited in said trench and the portions of said silicon dioxide deposited on said silicon nitride film; forming a polysilicon film on an entire surface of said semiconductor substrate; removing said polysilicon film until an upper surface of said polysilicon film is substantially level with an upper surface of said silicon dioxide, said polysilicon film remaining on the portions of said silicon dioxide in said trench and on portions of said silicon nitride film located at an edge region of said trench; selectively removing the portions of said silicon dioxide on said silicon nitride film; and selectively removing said polysilicon film remaining on the portions of said silicon dioxide in said trench.