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Patent US5719083A successfully refreshed from Google Patents.
US5719083A
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US
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Method of forming a complex film over a substrate having a specifically selected work function
Assignee: Sony Corp
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Filing: 1995-06-07
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Granted: 1998-02-17
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Expires: 2015-06-07
Abstract
Abstract Disclosed is a method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V th .
Inventors
- 👤 Hiroshi Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:47
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D62/00; H10D62/80; H10D62/83; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/0113; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/62; H10D64/661; H10D64/662; H10D64/663; H10D64/667; H10D64/668; H10D64/669; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/051; H10W20/052; H10W20/0526; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
177 words
A method of forming a complex film over a substrate comprising the steps of: forming a plurality of completely isolated island-like regions spaced from one another by gaps over the substrate while controlling a covering area of said island-like regions per unit area over said substrate and including the steps of forming a plurality of growth nuclei of a first conductive material and thereafter forming a first thin film of a second conductive material over all of the growth nuclei to form said island-like regions; covering over said substrate and said island-like regions and filling in said gaps with a second thin film made of a third conductive material different from the first and second conductive materials of said island-like regions; and obtaining a specific desired work function at an interface between said substrate and said complex film formed of said island-like regions and said second thin film by adjusting a magnitude of said cowering area of said island-like regions per unit area over said substrate over which said island-like regions and said second thin film overlie.
Claim 2
Independent Claim
177 words
A method of forming a complex film over a substrate comprising the steps of: forming a plurality of completely isolated island-like regions spaced from one another by gaps over the substrate while controlling a covering area of said island-like regions per unit area over said substrate and including the steps of forming a plurality of growth nuclei of a first conductive material and thereafter forming a first thin film of a second conductive material over all of the growth nuclei to form said island-like regions; covering over said substrate and said island-like regions and filling in said gaps with a second thin film made of a third conductive material different from the first and second conductive materials of said island-like regions; and obtaining a specific desired work function at an interface between said substrate and said complex film formed of said island-like regions and said second thin film by adjusting a magnitude of said cowering area of said island-like regions per unit area over said substrate over which said island-like regions and said second thin film overlie.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said island-like regions are formed of a semiconductor material by CVD.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein said second thin film is formed of a silicide.
Claim 5
Dependent Claim
12 words
A method according to claim 2, wherein said semiconductor material comprises silicon.
Claim 6
Dependent Claim
17 words
A method according to claim 1, wherein said island-like regions comprise a silicon doped with an impurity.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein said island-like regions comprise a doped silicon and said second thin film comprises a silicide.
Claim 8
Dependent Claim
17 words
A method according to claim 1, wherein said island-like regions are formed of a silicide by CVD.
Claim 9
Dependent Claim
18 words
A method according to claim 1, wherein said second thin film is formed of a metal by CVD.
Claim 10
Dependent Claim
15 words
A method according to claim 7, wherein said silicide is tungsten silicide formed by CVD.
Claim 11
Dependent Claim
15 words
A method according to claim 1, wherein said second thin film is formed by sputtering.
Claim 12
Dependent Claim
17 words
A method according to claim 10, wherein said second thin film is formed of titanium by sputtering.
Claim 13
Dependent Claim
18 words
A method according to claim 1 including the step of forming a gate electrode by said complex film.
Claim 14
Dependent Claim
21 words
A method according to claim 1 including the step of forming said complex film on a bottom portion of a contact-hole.
Claim 15
Dependent Claim
31 words
A method according to claim 1 including the step of providing a density of said growth nuclei of at least 40 pieces per unit area 1 μm 2 of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-02-16 | 2001-08-18 | 2002-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-16 | 2005-08-18 | 2006-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-16 | 2009-08-18 | 2010-02-17 | $7700.00 | Window Closed / Lapsed |