US5254481A
Expired / Lapsed
US
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Polycrystalline solar cell manufacturing method
Assignee: Canon Inc
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Filing: 1991-11-19
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Granted: 1993-10-19
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Expires: 2011-11-19
Abstract
Abstract A solar cell has a polycrystalline silicon layer formed on a metal substrate. The crystal orientation of the crystal grains of the silicon layer is regulated in the film thickness direction.
Inventors
- 👤 Shoji Nishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:07
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/165; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H10F10/12; H10F10/17; H10F10/174; H10F71/00; H10F71/121; H10F71/1221; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02E10/547; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
74 words
A method for manufacturing polycrystalline solar cells comprising the sequential steps of: arranging a plurality of single silicon crystals having regulated crystal orientation on a metal substrate at desired intervals; forming a metal-silicon intermediate layer between said metal substrate and said single silicon crystals by applying heat; oxidizing the exposed surface portions of said metal substrate; and performing crystal growth by a selective epitaxial growing method with said single silicon crystals as seed crystals.
Claim 2
Independent Claim
74 words
A method for manufacturing polycrystalline solar cells comprising the sequential steps of: arranging a plurality of single silicon crystals having regulated crystal orientation on a metal substrate at desired intervals; forming a metal-silicon intermediate layer between said metal substrate and said single silicon crystals by applying heat; oxidizing the exposed surface portions of said metal substrate; and performing crystal growth by a selective epitaxial growing method with said single silicon crystals as seed crystals.
Claim 3
Dependent Claim
83 words
A method for manufacturing polycrystalline solar cells according to claim 1, wherein said method comprises the steps of preliminarily: forming an insulating layer on a surface of a silicon wafer; forming a plurality of spaced apart fine openings in said insulating layer; forming single silicon crystals in said openings by a selective epitaxial growth method; removing said insulating layer by etching; separating said single silicon crystals from said silicon wafer by ultrasonic vibrations; and arranging said separated silicon crystals on said metal substrate.
Claim 4
Dependent Claim
27 words
A method for manufacturing polycrystalline solar cells according to claim 1, wherein ultrasonic vibrations are applied when said single silicon crystals are arranged on said metal substrate.
Claim 5
Independent Claim
72 words
A method for producing a semiconductor article, comprising the sequential steps of: forming a plurality of single crystal semiconductor bodies on a semiconductor substrate by a selective growth method; separating said bodies from said substrate; arranging said bodies on a conductive surface of a substrate at desired intervals, wherein the crystal orientation of said bodies is regulated; performing crystal growth by a selective epitaxial growth method with said bodies as seed crystals.
Claim 6
Independent Claim
72 words
A method for producing a semiconductor article, comprising the sequential steps of: forming a plurality of single crystal semiconductor bodies on a semiconductor substrate by a selective growth method; separating said bodies from said substrate; arranging said bodies on a conductive surface of a substrate at desired intervals, wherein the crystal orientation of said bodies is regulated; performing crystal growth by a selective epitaxial growth method with said bodies as seed crystals.
Claim 7
Independent Claim
71 words
A method for manufacturing a polycrystalline solar cell, comprising the sequential steps of: arranging single silicon crystals having regulated crystal orientation on a metal substrate at desired intervals; forming a metal-silicon intermediate layer between said metal substrate and said single silicon crystals by heating; oxidizing the exposed surface portions of said metal substrate; and performing crystal growth by a selective epitaxial growth method with said single silicon crystals as seed crystals.
Claim 8
Independent Claim
71 words
A method for manufacturing a polycrystalline solar cell, comprising the sequential steps of: arranging single silicon crystals having regulated crystal orientation on a metal substrate at desired intervals; forming a metal-silicon intermediate layer between said metal substrate and said single silicon crystals by heating; oxidizing the exposed surface portions of said metal substrate; and performing crystal growth by a selective epitaxial growth method with said single silicon crystals as seed crystals.
Claim 9
Dependent Claim
80 words
A method for manufacturing polycrystalline solar cells according to claim 5, wherein said method comprises the steps of preliminarily: forming an insulation layer on a silicon wafer; forming a plurality of spaced apart fine openings in said insulating layer; forming single silicon crystals in said openings by a selective epitaxial growth method; removing said insulating layer by etching; separating said single silicon crystals from said silicon wafer by ultrasonic vibrations; and arranging said single silicon crystals on said metal substrate.
Claim 10
Dependent Claim
27 words
A method for manufacturing polycrystalline solar cells according to claim 5, wherein ultrasonic vibrations are applied when said single silicon crystals are arranged on said metal substrate.
References Cited (Backward Citations)
US3953876A
Cited
US3990914A
Cited
US4042447A
Cited
DE2704339A1
Cited
US4187126A
Cited
US4463028A
Cited
JPS63182872A
Cited
US4927786A
Cited
US5002796A
Cited
US5098850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-18 | 2001-04-19 | 2001-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-18 | 2005-04-19 | 2005-10-19 | $7700.00 | Window Closed / Lapsed |